2001-4
RECTRON
SEMICONDUCTOR
FEATURES
* Surge overload rating - 30 amperes peak
* Ideal for printed circuit board
* Reliable low cost construction utilizing molded
* Glass passivated device
* Polarity symbols molded on body
* Mounting position: Any
* Weight: 0.5 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
FMD1S
THRU
FMD7S
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
Dimensions in millimeters
MD-S
TECHNICAL SPECIFICATION
CHARACTERISTICS
SYMBOL
UNITS
FMD1S
FMD3S
FMD4S
FMD2S
FMD5S
FMD6S
FMD7S
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
T
J,
T
STG
V
RMS
Volts
Volts
Amp
0.5
30
-55 to + 150
0
C
UNITS
Maximum Average Forward Output Rectified
Current TA = 30
o
C -on glass-epoxy P.C.B. ( NOTE 1 )
-on aluminum substrate ( NOTE 2 )
50
200
400
100
600
800
1000
35
140
280
70
420
560
700
Volts
Amps
FMD1S
FMD3S
FMD4S
FMD2S
FMD5S
FMD6S
FMD7S
50
200
400
100
600
800
1000
Typical Junction Capacitance ( Note3 )
C
J
15
pF
DC Blocking Voltage per element
V
F
I
R
1.30
100
uAmps
uAmps
Element at 0.4A DC
Maximum Forward Voltage Drop per Bridge
Volts
@T
A
= 25
o
C
@T
A
= 125
o
C
10
Maximum Reverse Current at rated
Maximum Reverse Recovery Time ( Note 4 )
trr
150
250
500
nSec
SINGLE-PHASE GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 0.8 Ampere
MINI FAST RECOVERY SURFACE MOUNT BRIDGE RECTIFIER
0.8
NOTE: 1. On glass-epoxy P.C.B. mounted on 0.05 X 0.05" (1.3 X 1.3mm) pads.
2. On aluminum substrate P.C.B. with an area of 0.8 X 0.8 X 0.25" (20 X 20 X 6.4mm) mounted on 0.05 X 0.05" (1.27 X 1.27mm) solder pad.
3. Measured at 1MHz and applied reverse voltage of 4.0 volts.
4. Test Conditions: I
F
= 0.5A, I
R
= -1.0A, I
RR
= -0.25A.
5. Suffix "-S" Surface Mount for Mini Dip Bridge.
M D
1
2
3
4
.004(0.10) MAX.
0.028(0.9)
0.020(0.5)
0.106(2.7)
0.091(2.3)
0.193(4.9)
0.177(4.5)
0.157(4.0)
0.152(3.6)
0.014(0.35)
0.006(0.15)
0.157(4.0)
0.145(3.6)
2.756(7.0)
0.260(6.6)
0.108(2.74)
0.092(2.34)
0.193(4.9)
0.177(4.5)
MECHANICAL DATA
RECTRON
RATING AND CHARACTERISTIC CURVES ( FMD1S THRU FMD7S )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES: 1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Source Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
50/100 ns/cm
FIG. 1 - TYPICAL FORWARD
AVERAGE FORWARD CURRENT, (A)
AMBIENT TEMPERATURE, ( )
CURRENT DERATING CURVE
1.2
1.0
.8
.6
.4
.2
0
30
60
90
120
150
180
on glass
-epoxy substrate
0
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
Pulse Width = 300us
1% Duty Cycle
TJ = 25
TJ = 150
10
1.0
.1
.01
.2
.4
.6
.8
1.0
1.2
1.4
JUNCTION CAPACITANCE, (pF)
FIG. 4 - TYPICAL JUNCTION CAPACITANCE
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2 .4
1.0 2
4
10
20 40 100
TJ = 25
FIG. 3 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
FORWARD SURGE CURRENT
1
2
4
6 8 10
20
40 60 80100
50
40
30
20
10
0
8.3ms Single Half Sine-Wave
(JEDED Method)
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