SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Epoxy : Device has UL flammability classification 94V-0
* Weight : 0.057 gram
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
HFM101ER
THRU
HFM108ER
DO-214AC
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
HIGH EFFICIENCY SILICON RECTIFIER
Dimensions in inches and (millimeters)
MECHANICAL DATA
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
0.209 (5.31)
0.185 (4.70)
0.035 (0.89)
0.059 (1.50)
0.067 (1.70)
0.091 (2.31)
0.160(4.06)
0.180(4.57)
0.086 (2.18)
0.110 (2.79)
0.067 (1.70)
0.051 (1.29)
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
NOTES : 1. Test Conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
2002-5
Maximum DC Reverse Current at
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
nSec
Maximum Full Load Reverse Current, Full cycle Average T
A
= 55
o
C
Maximum Forward Voltage at 1.0A DC
Volts
5.0
50
Maximum Reverse Recovery Time (Note 1)
Rated DC Blocking Voltage
50
uAmps
1.0
1.7
75
1.3
@T
A
= 25
o
C
@T
A
= 125
o
C
100
uAmps
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps
1.0
30
15
-65 to + 150
Amps
pF
0
C
UNITS
12
50
35
50
100
70
100
300
210
300
400
280
400
800
560
800
1000
700
1000
200
140
200
600
420
600
HFM
102ER
HFM
101ER
HFM
108ER
HFM
107ER
HFM
106ER
HFM
105ER
HFM
104ER
HFM
103ER
HFM
102ER
HFM
101ER
HFM
108ER
HFM
107ER
HFM
106ER
HFM
105ER
HFM
104ER
HFM
103ER
Reverse Energy ( Ir=1A )
E
R
20
m J
RECTRON
RATING AND CHARACTERISTIC CURVES ( HFM101ER THRU HFM108ER )
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
( - )
( - )
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
2.0
1.0
0
25 50 75 100 125 150 175
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 4 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
10
1.0
.1
.01
.001
0
.2
.4
.6
.8
1.0
1.2 1.4 1.6
1.8
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
HFM106ER~HFM108ER
HFM101ER~HFM103ER
HFM104ER~HFM105ER
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01
40
0
20
60
80
100
120
140
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0 2
4
10
20 40
100
HFM101ER~HFM105ER
HFM106ER~HFM108ER
TJ = 25
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
70
60
50
40
30
20
10
0
1
2
5
10
20
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
PDF 
ZIP