SURFACE MOUNT GLASS PASSIVATED
VOLTAGE RANGE 50 to 1000 Volts CURRENT 1.0 Ampere
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Fast switching
* Glass passivated device
* Ideal for surface mounted applications
* Low leakage current
* Metallurgically bonded construction
* Mounting position: Any
* Weight: 0.015 gram
* Epoxy : Device has UL flammability classification 94V-0
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
ELECTRICAL CHARACTERISTICS (At T
A
= 25
o
C unless otherwise noted)
HSM101
THRU
HSM108
MELF
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
HIGH EFFICIENCY SILICON RECTIFIER
NOTES : 1. Test Conditions: I
F
=0.5A, I
R
=-1.0A, I
RR
=-0.25A.
2. Measured at 1 MH
Z
and applied reverse voltage of 4.0 volts.
Dimensions in inches and (millimeters)
2002-12
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Volts
Maximum DC Blocking Voltage
Maximum Average Forward Current
at T
A
= 50
o
C
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
Typical Junction Capacitance (Note 2)
Operating and Storage Temperature Range
SYMBOL
V
RRM
V
DC
I
O
I
FSM
C
J
T
J
, T
STG
V
RMS
Volts
Volts
Volts
Amps
1.0
30
15
-55 to + 150
Amps
pF
0
C
UNITS
50
300
100
400
600
200
35
210
70
280
420
140
50
300
100
400
600
200
12
Maximum Full Load Reverse Current Average,
CHARACTERISTICS
V
F
SYMBOL
I
R
trr
UNITS
uAmps
nSec
Maximum DC Reverse Current at Rated DC Blocking Voltage T
A
= 25
o
C
Maximum Instantaneous Forward Voltage at 1.0A DC
Volts
100
50
Maximum Reverse Recovery Time (Note 1)
Full Cycle .375" (9.5mm) lead length at T
L
= 55
o
C
5.0
uAmps
1.0
1.70
75
1.3
MECHANICAL DATA
.095 (2.4)
.106 (2.7)
.028 (.60)
.018 (.46)
.190 (4.8)
.205 (5.2)
SOLDERABLE
ENDS
800
560
800
1000
700
1000
H S M 1 0 4
HSM102
HSM105 HSM106
HSM103
H S M 1 0 1
HSM107HSM108
H S M 1 0 4
HSM102
HSM105 HSM106
HSM103
H S M 1 0 1
HSM107 HSM108
RECTRON
RATING AND CHARACTERISTIC CURVES ( HSM101 THRU HSM108 )
FIG. 6 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, (pF)
REVERSE VOLTAGE, ( V )
200
100
60
40
20
10
6
4
2
1
.1
.2
.4
1.0
2
4
10
20 40
100
HSM101~HSM105
HSM106~HSM108
TJ = 25
FIG. 1 - TEST CIRCUIT DIAGRAM AND REVERSE RECOVERY TIME CHARACTERISTIC
50
NONINDUCTIVE
10
NONINDUCTIVE
D.U.T
25 Vdc
(approx)
(
V
)
(
V
)
( + )
( + )
1
NON-
INDUCTIVE
OSCILLOSCOPE
(NOTE 1)
PULSE
GENERATOR
(NOTE 2)
NOTES:
1 Rise Time = 7ns max. Input Impedance =
1 megohm. 22pF.
2. Rise Time = 10ns max. Souce Impedance =
50 ohms.
trr
+0.5A
0
-0.25A
-1.0A
1cm
SET TIME BASE FOR
10/20 ns/cm
FIG. 2 - TYPICAL FORWARD
CURRENT DERATING CURVE
AVERAGE FORWARD CURENT, (A)
AMBIENT TEMPERATURE ( )
2.0
1.0
0 25 50 75 100125150175
0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
FIG. 4 - TYPICAL INSTANTANEOUS FORWARD
INSTANTANEOUS FORWARD CURRENT, (A)
INSTANTANEOUS FORWARD VOLTAGE, (V)
10
1.0
.1
.01
.001
0
.2
.4
.6
.8
1.0 1.2 1.4 1.6 1.8
Pulse Width = 300uS
1% Duty Cycle
TJ = 25
HSM106~HSM108
HSM101~HSM103
HSM104~HSM105
FIG. 5 - MAXIMUM NON-REPETITIVE FORWARD SURGE CURRENT
PEAK FORWARD SURGE CURRENT, (A)
NUMBER OF CYCLES AT 60Hz
70
60
50
40
30
20
10
0
1
2
5
10
20
50
100
8.3ms Single Half Sine-Wave
(JEDEC Method)
FIG. 3 - TYPICAL REVERSE CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT, (uA)
PERCENT OF RATED PEAK REVERSE VOLTAGE, (%)
TJ = 25
TJ = 100
TJ = 150
100
10
1.0
.1
.01
40
0
20
60
80
100
120
140
CHARACTERISTICS
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