MM4448
TECHNICAL SPECIFICATION
1N4448 mini-MELF SIGNAL DIODE
RECTRON
SEMICONDUCTOR
ITEMS
Symbol
Ratings
Unit
Peak Reverse Voltage
V
RM
100
V
Reverse Recovery Time
trr
4
ns
Power Dissipation
P
500
mW
Forward Current
I
FM
500 *
mA
Junction Temp.
Tj
(-65 to 175)
C
Storage Temp.
T
stg
(-65 to 175)
C
Items
Materials
Package
mini MELF
Case
Hermetically sealed glass
Lead/Finish
Double stud/Solder Plating
Chip
Glass Passivated
Mechanical Data
Ratings
Symbol
Ratings
Unit
Non-Repetive Peak Reverse Voltage
V
RM
100
V
Minimum Breakdown Voltage @I
R
= 100mA
B
V
75
V
Peak Forward Surge Current @ t = 1.0s
I
FSM
1 *
A
Forward Continuous Current
I
FM
500 *
mA
Maximum Forward Voltage I
F
= 100mA
V
F
1
V
Maximum Reverse Current
V
R
= 20V
25
nA
V
R
= 75V
5
A
V
R
= 20V, T
j
= 150 C
30
A
Maximum Junction Capacitance
V
R
= 0, f= 1 MHz
Maximum Reverse Recovery Time
I
F
= 10mA, V
R
= 6V, I
R
= -1mA, R
L
= 100
Maximum Thermal Resistance
R
JA
300
K / W
trr
4
ns
I
R
Cj
4
pF
All Dimensions in mm
Absolute Maximum Ratings (Ta = 25C)
mini-MELF
3.70
3.30
0.28
1.30
1.60
0.50
* Note: Device terminals at ambient temperature
PDF 
ZIP