3. Measured on 8.3mS single half Sine-Wave or equivalent wave, duty cycle = 4 pulses per minute maximum.
NOTES :
2. Mounted on 0.2 X 0.2" ( 5.0 X 5.0mm ) copper pad to each terminal.
1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
4. V
F
= 3.5V on P6FMBJ6.8 thru P6FMB90 devices and V
F
= 5.0V on P6FMBJ100 thur P6FMBJ400 devices.
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
FEATURES
* Plastic package has underwriters laboratory
* Glass passivated chip construction
* 600 watt surage capability at 1ms
* Excellent clamping capability
* Low zener impedance
* Fast response time
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25
o
C ambient temperature unless otherwise specified.
T V S
P6FMBJ
SERIES
DO-214AA
600 WATT PEAK POWER 1.0 WATT STEADY STATE
GPP TRANSIENT VOLTAGE SUPPRESSOR
Dimensions in inches and (millimeters)
MAXIMUM RATINGS (At T
A
= 25
o
C unless otherwise noted)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types P6FMBJ6.8 thru P6FMBJ400
Electrical characteristics apply in both direction
1998-8
Ratings at 25
o
C ambient temperature unless otherwise specified.
RATINGS
Steady State Power Dissipation at T
L
= 75
o
C ( Note 2 )
Peak Pulse Durrent with a 10/1000uS waveform
( Note 1, Fig.3 )
Maximum Instantaneous Forward Voltage at 50A for
SYMBOL
I
FSM
V
F
T
J
, T
STG
Volts
-55 to + 150
0
C
U N I T S
unidirectional only ( Note 3,4 )
Amps
Peak Power Dissipation with a 10/1000uS (Note 1,2 Fig.1)
Minimum 600
100
SEE NOTE 4
VALUE
Operating and Storage Temperature Range
P
PPM
Watts
I
PPM
Amps
SEE TABLE 1
Peak Forward Surge Current, 8.3mS single half sine wave super-
imposed on rated load (Jedec Method)(Note 3,2) unidirectional only
P
M
(
AV
)
5.0
Amps
Back
PDF 
ZIP
