ChipFind - документация

Электронный компонент: 1S2076

Скачать:  PDF   ZIP
Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
making a final decision on the applicability of the information and products. Renesas Technology
Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
than the approved destination.
Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
contained therein.
1S2076
Silicon Epitaxial Planar Diode for High Speed Switching
ADE-208-145B (Z)
Rev.2
Oct. 2000
Features
Low capacitance. (C = 3.0 pF max)
Short reverse recovery time. (t
rr
= 8.0 ns max)
High reliability with glass seal.
Ordering Information
Type No.
Cathode band
Package Code
1S2076 Light
Blue
DO-35
Pin Arrangement
1
2
Cathode band
1. Cathode
2. Anode
1S2076
Rev.2, Oct. 2000, page 2 of 2
Absolute Maximum Ratings
(Ta = 25
C)
Item Symbol
Value
Unit
Peak reverse voltage
V
RM
35 V
Reverse voltage
V
R
30 V
Peak forward current
I
FM
450
mA
Non-Repetitive peak forward surge current
I
FSM
* 1
A
Average forward current
I
O
150
mA
Power dissipation
Pd
250
mW
Junction temperature
Tj
175
C
Storage temperature
Tstg
-65 to +175
C
Note: Within 1s forward surge current.
Electrical Characteristics
(Ta = 25
C)
Item Symbol
Min
Typ
Max
Unit
Test
Condition
Forward voltage
V
F
0.64
0.8 V I
F
= 10 mA
Reverse current
I
R
0.1 A V
R
= 30 V
Capacitance C
3.0 pF
V
R
= 1 V, f = 1 MHz
Reverse recovery time
t
rr
*
8.0 ns
I
F
= I
R
=10 mA, Irr = 1 mA
Note: Reverse recovery time test circuit
3k
0.1
F
Ro = 50
Rin = 50
DC
Supply
Pulse
Generator
Sampling
Oscilloscope
Trigger
1S2076
Rev.2, Oct. 2000, page 3 of 3
Main Characteristic
Ta = -25
C
Ta = 25
C
Ta = 125
C
Ta = 75
C
Ta = 75
C
Ta = 125
C
Ta = 25
C
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
Fig.3 Capacitance Vs. Reverse voltage
Forward voltage V
F
(V)
0
0.2
0.8
Forward current I
F
(A)
Reverse current I
R
(A)
0.6
1.0
0.4
1.2
Reverse voltage V
R
(V)
1.0
10
10
1.0
0.1
Capacitance C (pF)
100
f = 1MHz
0
10
30
40
20
Reverse voltage V
R
(V)
50
10
-1
10
-2
10
-3
10
-4
10
-4
10
-5
10
-6
10
-7
10
-8
10
-9