Rev.2.00, Dec.09.2004, page 1 of 4
2SB1691
Silicon PNP Epitaxial Planer
Low Frequency Power Amplifier
REJ03G0482-0200
(Previous ADE-208-1387A (Z))
Rev.2.00
Dec.09.2004
Features
Small size package: MPAK (SC59A)
Large Maximum current: I
C
= 1 A
Low collector to emitter saturation voltage: V
CE(sat)
= 0.3 V max.(at I
C
/I
B
= 0.5 A/0.05 A)
High power dissipation: P
C
= 800 mW (when using alumina ceramic board (25 x 60 x 0.7 mm))
Complementary pair with 2SD2655
Outline
1
2
3
1. Emitter
2. Base
3. Collector
MPAK
Note: Marking is "WL-".
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol
Ratings
Unit
Collector to base Voltage
V
CBO
-
60 V
Collector to emitter voltage
V
CEO
-
50 V
Emitter to base voltage
V
EBO
6 V
Collector current
I
C
1 A
Collector peak current
ic(peak)
2
A
Collector power dissipation
P
C
800* mW
Junction temperature
Tj
150
C
Storage temperature
Tstg
-
55 to +150
C
Note:
*When using alumina ceramic board (25 x 60 x 0.7 mm)
2SB1691
Rev.2.00, Dec.09.2004, page 2 of 4
Electrical Characteristics
(Ta = 25C)
Item Symbol
Min
Typ
Max
Unit
Test
Condition
Collector to base breakdown voltage
V
(BR)CBO
60
V
I
C
= 10
A, I
E
= 0
Collector to emitter breakdown voltage
V
(BR)CEO
50
V
I
C
= 1 mA, R
BE
=
Emitter to base breakdown voltage
V
(BR)EBO
6
V
I
E
= 10
A, I
C
= 0
Collector cutoff current
I
CBO
100 nA
V
CB
= 50 V, I
E
= 0
Emitter cutoff current
I
EBO
100 nA
V
EB
= 5 V, I
C
= 0
DC current transfer ratio
h
FE
200
500
V
CE
= 2 V, I
C
= 0.1 A
Collector to emitter saturation voltage
V
CE(sat)
0.2 0.3 V
I
C
= 0.5 A, I
B
= 0.05 A,
Pulse test
Base to emitter saturation voltage
V
BE(sat)
0.95 1.2 V
I
C
= 0.5 A, I
B
= 0.05 A,
Pulse test
Gain bandwidth product
f
T
310
MHz
V
CE
= 2 V, I
C
= 0.1 A
Collector output capacitance
Cob
9.8
pF
V
CB
= 10 V, I
E
= 0,
f = 1 MHz
Main Characteristics
0
50
100
150
200
Collector Power Dissipation Pc (mW)
Maximum Collector Dissipation Curve
0.6
10
100
1
0
0.8
Base to Emitter Voltage V
BE
(V)
Collector Current I
C
(mA)
Typical Transfer Characteristics
0.2
0.4
1.0
0
1.2
0.8
Collector Current I
C
(mA)
0
2
4
6
Collector Current I
C
(mA)
Typical Output Characteristics (1)
Ambient Temperature T
a
(
C)
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
0.4
1.6
8
1200
1000
800
400
200
10
100
200
Pulse
Typical Output Characteristics (2)
Pulse
1000
V
CE
= 2 V
Pulse
250
A
200
A
150
A
100
A
300
A
I
B
= 50
A
350
A
2.0
I
B
= 1 mA
2 mA
3 mA
4 mA
5 mA
6 mA
7 mA
100
200
300
400
500
When using alumina ceramic board
S = 25 mm x 60 mm, t = 0.7 mm
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