2SK3391
Rev.2.00, Apr.14.2004, page 2 of 4
Electrical Characteristics
(Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Zero gate voltage drain
current
I
DSS
--
--
10
A
V
DS
= 13.7 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
5
A
V
GS
= 10 V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
2.3
--
3.1
V
I
D
= 1 mA, V
DS
= 13.7 V
Input capacitance
Ciss
--
10
--
pF
V
GS
= 5 V, V
DS
= 0, f = 1 MHz
Output capacitance
Coss
--
3.5
--
pF
V
DS
= 13.7 V, V
GS
= 0, f = 1 MHz
Output Power
Pout
1.6
--
--
W
V
DS
= 13.7 V, I
DO
= 0.15 A
f = 836 MHz, Pin = 25.1 mW
Added Efficiency
add
58
--
--
%
V
DS
= 13.7 V, I
DO
= 0.15 A
f = 836 MHz, Pin = 25.1 mW
Main Characteristics
8
6
4
2
0
50
100
150
200
Channel Power Dissipation Pch (W)
Case Temperature Tc (
C)
Maximum Channel Power
Dissipation Curve
0.8
2
3
4
5
6
7
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V
DS
= 13.7 V
Pulse Test
Typical Output Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
0.01
1
0.3
0.03
0.1
0.03
0.1
0.3
1
0.01
Drain Current I
D
(A)
Forward Transfer Admittance |y
fs
| (S)
Forward Transfer Admittance vs.
Drain Current
V
DS
= 13.7 V
Pulse Test
Tc = - 25
C
25
C
75
C
Tc = 75
C
25
C
- 25
C
0.6
0.4
0.2
0.0
0.001 0.003
0.001
0.003
1.5
0
2
4
6
8
10
V
GS
= 4 V
6 V
5 V
Pulse Test
8 V
10 V
7 V
1
0.5
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