2SK3446
Silicon N Channel Power MOS FET
Power Switching
ADE-208-1566F (Z)
7th. Edition
Jan. 2003
Features
Capable of 2.5 V gate drive
Low drive current
Low on-resistance
R
DS(on)
=1.5
typ. (at V
GS
= 4 V)
Outline
TO-92MOD.
1. Source
2. Drain
3. Gate
3
2
1
D
G
S
2SK3446
Rev.6, Jan. 2003, page 2 of 10
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol
Ratings
Unit
Drain to source voltage
V
DSS
150 V
Gate to source voltage
V
GSS
10 V
Drain current
I
D
1 A
Drain peak current
I
D(pulse)
Note1
4
A
Body-drain diode reverse drain current I
DR
1 A
Channel dissipation
Pch
Note2
0.9
W
Channel
temperature Tch 150 C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10 s, duty cycle 1 %
2. Value at Ta = 25
C
2SK3446
Rev.6, Jan. 2003, page 3 of 10
Electrical Characteristics
(Ta = 25C)
Item Symbol
Min
Typ
Max
Unit
Test
Conditions
Drain to source breakdown voltage V
(BR)DSS
150 --
-- V I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
10 --
-- V I
G
= 100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
-- 10
A V
GS
= 8 V, V
DS
= 0
Zero gate voltage drain current
I
DSS
--
-- 1
A V
DS
= 150 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
0.5 -- 1.5 V V
DS
= 10 V,
I
D
= 1 mA
Static drain to source on state
R
DS(on)
-- 1.5 1.95
I
D
= 0.5 A, V
GS
= 4 V
Note3
resistance R
DS(on)
-- 1.9 2.5
I
D
= 0.5 A, V
GS
= 2.5 V
Note3
Forward transfer admittance
|y
fs
| 0.8
1.4
-- S I
D
= 0.5 A, V
DS
= 10 V
Note3
Input capacitance
Ciss
-- 98 -- pF V
DS
= 10 V
Output capacitance
Coss
-- 31 -- pF V
GS
= 0
Reverse transfer capacitance
Crss
-- 14 --
pF
f = 1 MHz
Total gate charge
Qg
-- 3.5 -- nC V
DD
= 100 V
Gate to source charge
Qgs
-- 0.5 -- nC V
GS
= 4 V
Gate to drain charge
Qgd
-- 1.8 -- nC I
D
= 1 A
Turn-on delay time
t
d(on)
-- 8 -- ns V
GS
= 4 V, I
D
= 0.5 A
Rise time
t
r
-- 12 -- ns R
L
= 60
Turn-off delay time
t
d(off)
-- 34 -- ns
Fall time
t
f
-- 19 -- ns
Bodydrain diode forward voltage
V
DF
--
1.0
1.5
V
IF = 1 A, V
GS
= 0
Note3
Bodydrain diode reverse recovery
time
t
rr
-- 60 --
ns
IF = 1 A, V
GS
= 0
diF/ dt =100 A/
s
Notes: 3. Pulse test
2SK3446
Rev.6, Jan. 2003, page 4 of 10
Main Characteristics
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source voltage V (V)
DS
Drain Current I (A)
D
Typical Output Characteristics
Gate to Source Voltage V (V)
GS
Drain current I (A)
D
Typical Transfer Characteristics
0.003
0.001
10
3
1
0.3
0.1
0.03
0.01
0.1 0.3
1
3
10
30
100
500
100
s
10
s
1 ms
Ta = 25
C
2.5
0.5
1
1.5
2
0
2
4
6
8
10
2.5 V
2 V
V
GS
= 1.5 V
3 V
Pulse Test
5
4
3
2
1
0
2
4
6
8
10
Tc = -25
C
25
C
75
C
V = 10 V
Pulse Test
DS
Operation in
this area is
limited by R
DS(on)
4 V
1.6
1.2
0.8
0.4
0
50
100
150
200
Channel Dissipation Pch (W)
Ambient Temperature Ta (
C)
Power vs. Temperature Derating
DC Operation
PW = 10 ms (1shot)
2SK3446
Rev.6, Jan. 2003, page 5 of 10
Drain Current I (A)
D
Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
vs. Temperature
0.1
1
10
0.3
3
10
2
5
1
0.2
0.1
0.5
V = 2.5 V
GS
Pulse Test
4 V
5
4
3
2
1
25
0
25
50
75
100 125 150
0
I
D
= 1 A
0.5 A
0.2 A
V
GS
= 2.5 V
Gate to Source Voltage V (V)
GS
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
3
2
1
0
2
0
4
6
8
10
0.5 A
0.2 A
V (V)
DS(on)
Drain to Source Saturation Voltage
Pulse Test
I = 1 A
D
Forward Transfer Admittance |yfs| (S)
Drain Current I (A)
D
Forward Transfer Admittance vs.
Drain Current
0.01 0.03
0.1
0.3
1
3
10
10
1
3
0.3
0.03
0.1
0.01
DS
V = 10 V
Pulse Test
25
C
Tc = -25
C
75
C
0.5 A
0.2 A
Pulse Test
V
GS
= 4 V
I = 1 A
D
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