Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Mar. 2002
OUTLINE DRAWING
Dimensions
in mm
TO-220F
TYPE
NAME
VOLTAGE
CLASS
3.2
0.2
1.3 MAX
0.8
2.54
13.5 MIN
3.6
5.0
1.2
8.5
10.5 MAX
5.2
4.5
2 3
1
2
1
3
1
2
3
T
1
TERMINAL
T
2
TERMINAL
GATE TERMINAL
17
2.54
2.8
0.5
2.6
Measurement point of
case temperature
APPLICATION
Contactless AC switches, light dimmer, electric blankets,
control of household equipment such as electric fan,
solenoid drivers, small motor control,
other general purpose control applications
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
BCR3PM
1. Gate open.
I
T (RMS)
........................................................................ 3A
V
DRM
....................................................................... 600V
I
FGT
!
, I
RGT
!
, I
RGT
#
.......................... 20mA (10mA)
5
V
iso
........................................................................ 2000V
UL Recognized: Yellow Card No.E80276(N)
File No. E80271
Symbol
I
T (RMS)
I
TSM
I
2t
P
GM
P
G (AV)
V
GM
I
GM
T
j
T
stg
--
V
iso
Parameter
RMS on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Weight
Isolation voltage
Conditions
Commercial frequency, sine full wave 360
conduction, T
c
=107
C
60Hz sinewave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
T
a
=25
C, AC 1 minute, T
1
T
2
G terminal to case
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Ratings
3.0
30
3.7
3
0.3
6
0.5
40 ~ +125
40 ~ +125
2.0
2000
Symbol
V
DRM
V
DSM
Parameter
Repetitive peak off-state voltage
1
Non-repetitive peak off-state voltage
1
Voltage class
Unit
V
V
MAXIMUM RATINGS
12
600
720
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
Mar. 2002
SUPPLY
VOLTAGE
TIME
TIME
TIME
MAIN CURRENT
MAIN
VOLTAGE
(di/dt)c
V
D
(dv/dt)c
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Symbol
I
DRM
V
TM
V
FGT
!
V
RGT
!
V
RGT
#
I
FGT
!
I
RGT
!
I
RGT
#
V
GD
R
th (j-c)
(dv/dt)
c
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
2
Gate trigger current
2
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
commutating voltage
Test conditions
T
j
=125
C, V
DRM
applied
T
c
=25
C, I
TM
=4.5A, Instantaneous measurement
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=25
C, V
D
=6V, R
L
=6
, R
G
=330
T
j
=125
C, V
D
=1/2V
DRM
Junction to case
3
T
j
=125
C
Unit
mA
V
V
V
V
mA
mA
mA
V
C/ W
V/
s
Typ.
--
--
--
--
--
--
--
--
--
--
--
!
@
#
!
@
#
ELECTRICAL CHARACTERISTICS
Limits
Min.
--
--
--
--
--
--
--
--
0.2
--
5
Max.
2.0
1.5
1.5
1.5
1.5
20
5
20
5
20
5
--
4.5
--
2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5
C/W.
4. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
5. High sensitivity (I
GT
10mA) is also available. (I
GT
item
1
)
PERFORMANCE CURVES
Test conditions
Commutating voltage and current waveforms
(inductive load)
1. Junction temperature
T
j
=125
C
2. Rate of decay of on-state commutating current
(di/dt)
c
=1.5A/ms
3. Peak off-state voltage
V
D
=400V
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
3.8
0.6 1.0 1.4 1.8 2.2 2.6 3.0 3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
j
= 25
C
10
0
2 3
5 7 10
1
2 3
5 7 10
2
4
4
30
35
20
25
10
15
5
40
0
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
4
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
160
120
100
60
20
0
4.0
0
0.5
1.5
2.5
3.5
40
80
140
1.0
2.0
3.0
10
0
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
2
7
5
3
2
10
1
7
5
3
2
7
5
3
2
10
1
V
GD
= 0.2V
I
FGT I,
I
RGT III
I
RGT I
V
GT
P
G(AV)
= 0.3W
P
GM
= 3W
I
GM
=
0.5A
2 3
10
1
5 7 10
0
2 3 5 7 10
1
2 3 5 7 10
2
4.0
4.5
5.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
2 3
10
2
5 7 10
3
2 3 5 7
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
I
FGT I,
I
RGT I
I
RGT III
5.0
4.0
3.0
2.0
1.0
4.5
3.5
2.5
1.5
0.5
0
4.0
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5
GATE VOLTAGE (V)
GATE CURRENT (mA)
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
GATE TRIGGER CURRENT (T
j
= t
C)
GATE TRIGGER CURRENT (T
j
= 25
C)
TYPICAL EXAMPLE
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
GATE TRIGGER VOLTAGE
( T
j
= t
C
)
GATE TRIGGER VOLTAGE
( T
j
= 25
C
)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(JUNCTION TO CASE)
TRANSIENT THERMAL IMPEDANCE (
C/
W)
CONDUCTION TIME
(CYCLES AT 60Hz)
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
MAXIMUM ON-STATE POWER
DISSIPATION
ON-STATE POWER DISSIPATION (W)
RMS ON-STATE CURRENT (A)
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
360
CONDUCTION
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE CASE TEMPERATURE
VS. RMS ON-STATE CURRENT
CASE TEMPERATURE (
C)
RMS ON-STATE CURRENT (A)
GATE CHARACTERISTICS
(
,
AND
)
Mar. 2002
MITSUBISHI SEMICONDUCTOR
TRIAC
BCR3PM
LOW POWER USE
INSULATED TYPE, PLANAR PASSIVATION TYPE
Refer to the page 6 as to the product guaranteed
maximum junction temperature 150
C
10
1
10
3
7
5
3
2
60
20
20
10
2
7
5
3
2
60
100
140
4
4
40
0
40
80
120
160
100
80
40
20
0
140
40
40
60
20 0
20
60 80
140
100 120
60
120
140
40
40
60
20 0
20
60 80 100 120
10
5
7
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
160
120
100
60
20
0
3.2
1.6
0.4
0
0.8 1.2
2.0 2.4 2.8
40
80
140
160
120
100
60
20
0
8
0
1
3
5
7
40
80
140
2
4
6
60 60 t2.3
100 100 t2.3
120 120 t2.3
140
60
20
20
60
100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
40
0
40
80
120
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (
C)
RMS ON-STATE CURRENT (A)
ALL FINS ARE BLACK PAINTED
ALUMINUM AND GREASED
NATURAL CONVECTION
CURVES APPLY
REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE,
INDUCTIVE
LOADS
ALLOWABLE AMBIENT TEMPERATURE
VS. RMS ON-STATE CURRENT
AMBIENT TEMPERATURE (
C)
RMS ON-STATE CURRENT (A)
NATURAL CONVECTION
NO FINS
CURVES APPLY REGARDLESS
OF CONDUCTION ANGLE
RESISTIVE, INDUCTIVE LOADS
TYPICAL EXAMPLE
REPETITIVE PEAK OFF-STATE
CURRENT VS. JUNCTION
TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= t
C
)
REPETITIVE PEAK OFF-STATE CURRENT
( T
j
= 25
C
)
TYPICAL EXAMPLE
HOLDING CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
HOLDING CURRENT
( T
j
= t
C
)
HOLDING CURRENT
( T
j
= 25
C
)
LACHING CURRENT VS.
JUNCTION TEMPERATURE
LACHING CURRENT (mA)
JUNCTION TEMPERATURE (
C)
T
2
+
, G
+
T
2
, G
TYPICAL
EXAMPLE
T
2
+
, G
TYPICAL
EXAMPLE
DISTRIBUTION
TYPICAL EXAMPLE
BREAKOVER VOLTAGE VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (
C)
100 (%)
BREAKOVER VOLTAGE
( T
j
= t
C
)
BREAKOVER VOLTAGE
( T
j
= 25
C
)
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