Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
CR5AS
APPLICATION
Switching mode power supply, regulator for autocycle, such as TV. VCR. PRINTER, ignitors for
autocycle, electric tools, other general purpose control applications, strobe flasher
I
T (AV)
........................................................................... 5A
V
DRM
..............................................................400V/600V
I
GT
......................................................................... 200
A
Symbol
V
RRM
V
RSM
V
R (DC)
V
DRM
V
D (DC)
Parameter
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
DC reverse voltage
Repetitive peak off-state voltage
V
1
DC off-state voltage
V
1
Voltage class
Unit
V
V
V
V
V
MAXIMUM RATINGS
8
400
500
320
400
320
12
600
720
480
600
480
Symbol
I
T (RMS)
I
T (AV)
I
TSM
I
2t
P
GM
P
G (AV)
V
FGM
V
RGM
I
FGM
T
j
T
stg
--
Parameter
RMS on-state current
Average on-state current
Surge on-state current
I
2t
for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate forward voltage
Peak gate reverse voltage
Peak gate forward current
Junction temperature
Storage temperature
Weight
Conditions
Commercial frequency, sine half wave, 180
conduction, T
c
=88
C
60Hz sine half wave 1 full cycle, peak value, non-repetitive
Value corresponding to 1 cycle of half wave 60Hz, surge on-state
current
Typical value
Unit
A
A
A
A
2
s
W
W
V
V
A
C
C
g
Ratings
7.8
5
90
33
0.5
0.1
6
6
0.3
40 ~ +125
40 ~ +125
0.26
V
1. With Gate-to-cathode resistance R
GK
=220
6.5
5.00.2
2.3
2.3
0.9 MAX
1.0
5.50.2
2.3
10 MAX
0.50.1
0.50.2
0.8
1.50.2
1
.0 MAX
2
3
4
1
TYPE
NAME
VOLTAGE
CLASS
2.3 MIN
Measurement point of
case temperature
OUTLINE DRAWING
Dimensions
in mm
MP-3
2 4
1
3
1
2
3
4
CATHODE
ANODE
GATE
ANODE
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
V
2. The method point for case temperature is at anode tab.
V
3. If special values of I
GT
are required, choose at least two items from those listed in the table below. (Example: AB, BD)
The above values do not include the current flowing through the 220
resistance between the gate and cathode.
B
20 ~ 50
Item
I
GT
(
A)
A
1 ~ 30
C
40 ~ 100
D
80 ~ 200
ELECTRICAL CHARACTERISTICS
Test conditions
T
j
=125
C, V
RRM
applied, R
GK
=220
T
j
=125
C, V
DRM
applied, R
GK
=220
T
c
=25
C, I
TM
=15A, instantaneous value
T
j
=25
C, V
D
=6V, I
T
=0.1A
T
j
=125
C, V
D
=1/2V
DRM
, R
GK
=220
T
j
=25
C, V
D
=6V, I
T
=0.1A
T
j
=25
C, V
D
=12V, R
GK
=220
Junction to case
V
2
Unit
mA
mA
V
V
V
A
mA
C/W
Typ.
--
--
--
--
--
--
3.5
--
Symbol
I
RRM
I
DRM
V
TM
V
GT
V
GD
I
GT
I
H
R
th (j-c)
Parameter
Repetitive peak reverse current
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Gate non-trigger voltage
Gate trigger current
Holding current
Thermal resistance
Limits
Min.
--
--
--
--
0.1
1
--
--
Max.
2.0
2.0
1.8
0.8
--
200
V
3
--
3.0
10
0
2 3
5 7 10
1
40
20
2 3
5 7 10
2
4
4
60
80
100
30
10
50
70
90
0
3.8
0.6
1.4
2.2
3.0
1.0
1.8
2.6
3.4
10
2
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
10
1
T
c
= 25C
MAXIMUM ON-STATE CHARACTERISTICS
ON-STATE CURRENT (A)
ON-STATE VOLTAGE (V)
RATED SURGE ON-STATE CURRENT
SURGE ON-STATE CURRENT (A)
CONDUCTION TIME
(CYCLES AT 60Hz)
PERFORMANCE CURVES
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
10
2
10
0
10
1
7
5
3
2
10
1
7
5
3
2
10
0
7
5
3
2
7
5
2 3 5 7
10
1
2 3 5 7
10
2
2 3 5 7
2 3
10
1
V
FGM
= 6V
V
GT
= 0.8V
I
GT
= 200A
(T
j
= 25C)
P
GM
= 0.5W
P
G(AV)
= 0.1W
V
GD
= 0.1V
I
FGM
= 0.3A
16
14
6
4
2
12
10
8
0
8
0
2
4
6
7
1
3
5
360
= 30
60
120
90
180
RESISTIVE, INDUCTIVE LOADS
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE HALF WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
GATE VOLTAGE (V)
GATE CURRENT (mA)
2 3
10
0
5 7 10
1
2 3 5 7 10
2
2 3 5 7 10
3
10
1
2 3
10
3
5 710
2
2 3 5 710
1
2 3 5 7 10
0
10
3
7
5
3
2
10
2
7
5
3
2
7
5
3
2
10
0
JUNCTION TO AMBIENT
JUNCTION TO CASE
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
TRANSIENT THERMAL IMPEDANCE (C/
W)
TIME (s)
160
120
60
40
20
140
100
80
0
8
0
2
4
6
7
1
3
5
360
RESISTIVE,
INDUCTIVE
LOADS
= 30
60
120
90
180
GATE CHARACTERISTICS
120 140
60
20
40
60
0
20 40
80 100
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
10
0
TYPICAL EXAMPLE
GATE TRIGGER CURRENT VS.
JUNCTION TEMPERATURE
JUNCTION TEMPERATURE (C)
100 (%)
GATE TRIGGER CURRENT (T
j
= tC)
GATE TRIGGER CURRENT (T
j
= 25C)
# 1
# 2
# 1
@
11A
# 2
@
61A
I
GT
(25C)
R
L
= 60
V
D
= 6V
1.0
0.8
0.7
0.6
0.3
0.4
0.1
0
120 140
40
60
20
20
80
0.2
0.5
0.9
0
60
40
100
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
,,,,,,,,,,,
TYPICAL EXAMPLE
DISTRIBUTION
GATE TRIGGER VOLTAGE VS.
JUNCTION TEMPERATURE
GATE TRIGGER VOLTAGE
( V
)
JUNCTION TEMPERATURE (C)
T
j
= 25C
Feb.1999
MITSUBISHI SEMICONDUCTOR
THYRISTOR
CR5AS
MEDIUM POWER USE
NON-INSULATED TYPE, GLASS PASSIVATION TYPE
16
12
6
4
2
14
10
8
0
8
0
2
4
6
7
1
3
5
= 30 60
120
90
180
360
RESISTIVE
LOADS
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
= 30
60
120
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
WITHOUT FIN
160
120
60
40
20
140
100
80
0
1.6
0
0.4
0.8
1.2 1.4
0.2
0.6
1.0
= 30
60
120
90
180
360
WITHOUT FIN
RESISTIVE LOADS
NATURAL
CONVECTION
160
120
60
40
20
140
100
80
0
8
0
2
4
6
7
1
3
5
= 30
60 90
360
120 180
RESISTIVE
LOADS
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE CASE TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
CASE TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
MAXIMUM AVERAGE POWER DISSIPATION
(SINGLE-PHASE FULL WAVE)
AVERAGE POWER DISSIPATION (W)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
160
120
60
40
20
140
100
80
0
8
0
2
4
6
7
1
3
5
80 80 t2.3
= 30
60
120
180
90
360
RESISTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
160
120
60
40
20
140
100
80
0
8
0
2
4
6
7
1
3
5
= 30
60
120
90
180
360
RESISTIVE,
INDUCTIVE
LOADS
NATURAL
CONVECTION
ALUMINUM BOARD
80 80 t2.3
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE FULL WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
ALLOWABLE AMBIENT TEMPERATURE VS.
AVERAGE ON-STATE CURRENT
(SINGLE-PHASE HALF WAVE)
AMBIENT TEMPERATURE (C)
AVERAGE ON-STATE CURRENT (A)
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