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Электронный компонент: E208931_HSC278

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The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
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HSC278
Silicon Schottky Barrier Diode
ADE-208-931B (Z)
Rev. 2
Dec. 2000
Features
Low forward voltage, Low capacitance.
Ultra small Flat Package (UFP) is suitable for surface mount design.
Ordering Information
Type No.
Laser Mark
Package Code
HSC278 S6
UFP
Pin Arrangement
1
2
Cathode mark
Mark
1. Cathode
2. Anode
S6
HSC278
Rev.2, Dec. 2000, page 2 of 5
Absolute Maximum Ratings
(Ta = 25
C)
Item Symbol
Value
Unit
Repetitive peak reverse voltage
V
RRM
30 V
Reverse voltage
V
R
30 V
Non-Repetitive peak forward surge current
I
FSM
*
200
mA
Peak forward current
I
FM
150
mA
Average rectified current
I
O
30 mA
Junction temperature
Tj
125
C
Storage temperature
Tstg
-55 to +125
C
Note
: 10 msec sine wave 1 pulse
Electrical Characteristics
(Ta = 25
C)
Item
Symbol Min Typ Max Unit Test
Condition
Forward voltage
V
F1
--
--
0.30
V
I
F
= 1 mA
V
F2
--
--
0.95
I
F
= 30 mA
Reverse current
I
R
--
--
700
nA
V
R
= 10 V
Capacitance C --
--
1.50
pF
V
R
= 1 V, f = 1 MHz
ESD-Capability *
1
--
100
--
--
V
C = 200 pF, R
L
= 0
, Both forward and
reverse direction 1 pulse.
Note
: 1. Failure criterion ; I
R
1.4 A at V
R
= 10 V
HSC278
Rev.2, Dec. 2000, page 3 of 5
Main Characteristic
Fig.1 Forward current Vs. Forward voltage
Fig.2 Reverse current Vs. Reverse voltage
Fig.3 Capacitance Vs. Reverse voltage
1.0
Forward voltage V
F
(V)
Reverse voltage V
R
(V)
Reverse voltage V
R
(V)
Forward current I
F
(A)
Reverse current I
R
(A)
Capacitance C (pF)
0
0.1
10
10
0.1
1.0
15
20
10
0
0.8
0.2
0.4
0.6
10
1
10
-8
10
-8
10
-7
10
-6
10
-5
10
-4
10
-7
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
1.0
Ta = 25
C
Ta = 25
C
Ta = 75
C
5
f=1MHz
Ta = 75
C