Regarding the change of names mentioned in the document, such as Mitsubishi
Electric and Mitsubishi XX, to Renesas Technology Corp.
The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Mitsubishi Electric, Mitsubishi Electric Corporation, Mitsubishi
Semiconductors, and other Mitsubishi brand names are mentioned in the document, these names
have in fact all been changed to Renesas Technology Corp. Thank you for your understanding.
Except for our corporate trademark, logo and corporate statement, no changes whatsoever have been
made to the contents of the document, and these changes do not constitute any alteration to the
contents of the document itself.
Note : Mitsubishi Electric will continue the business operations of high frequency & optical devices
and power devices.
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
MITSUBISHI Nch POWER MOSFET
FS3KM-10A
HIGH-SPEED SWITCHING USE
Sep. 2001
2.6
0.2
15
0.3
14
0.5
10
0.3
2.8
0.2
3.2 0.2
1.1
0.2
1.1
0.2
0.75
0.15
2.54
0.25
2.54
0.25
4.5
0.2
0.75
0.15
3
0.3
3.6
0.3
6.5
0.3
GATE
DRAIN
SOURCE
MITSUBISHI Nch POWER MOSFET
FS3KM-10A
HIGH-SPEED SWITCHING USE
500
30
3
9
3
25
55 ~ +150
55 ~ +150
2000
2.0
V
GS
= 0V
V
DS
= 0V
L = 200
H
AC for 1minute, Terminal to case
Typical value
Drain-source voltage
Gate-source voltage
Drain current
Drain current (Pulsed)
Avalanche current (Pulsed)
Maximum power dissipation
Channel temperature
Storage temperature
Isolation voltage
Weight
V
V
A
A
A
W
C
C
V
g
V
DSS
V
GSS
I
D
I
DM
I
DA
P
D
T
ch
T
stg
V
iso
--
Symbol
MAXIMUM RATINGS
(Tc = 25
C)
Parameter
Conditions
Ratings
Unit
FS3KM-10A
OUTLINE DRAWING
Dimensions in mm
APPLICATION
SMPS, AC-adapter, Power supply of Printer, Copier, TV, VCR. etc.
TO-220FN
G 10V DRIVE
G V
DSS ...............................................................................
500V
G r
DS (ON) (MAX) ................................................................
4.4
G I
D ...........................................................................................
3A
MITSUBISHI Nch POWER MOSFET
FS3KM-10A
HIGH-SPEED SWITCHING USE
Sep. 2001
--
--
--
--
3.0
3.5
3.5
2.0
280
35
7
10
15
45
20
1.5
--
I
D
= 1mA, V
GS
= 0V
I
GS
=
100A, V
DS
= 0V
V
GS
=
25V, V
DS
= 0V
V
DS
= 500V, V
GS
= 0V
I
D
= 1mA, V
DS
= 10V
I
D
= 1A, V
GS
= 10V
I
D
= 1A, V
GS
= 10V
I
D
= 1A, V
DS
= 10V
V
DS
= 25V, V
GS
= 0V, f = 1MHz
V
DD
= 200V, I
D
= 1A, V
GS
= 10V, R
GEN
= R
GS
= 50
I
S
= 1A, V
GS
= 0V
Channel to case
Drain-source breakdown voltage
Gate-source breakdown voltage
Gate-source leakage current
Drain-source leakage current
Gate-source threshold voltage
Drain-source on-state resistance
Drain-source on-state voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Source-drain voltage
Thermal resistance
500
30
--
--
2.5
--
--
1.2
--
--
--
--
--
--
--
--
--
ELECTRICAL CHARACTERISTICS
(Tch = 25
C)
V
(BR) DSS
V
(BR) GSS
I
GSS
I
DSS
V
GS (th)
r
DS (ON)
V
DS (ON)
y
fs
C
iss
C
oss
C
rss
t
d (on)
t
r
t
d (off)
t
f
V
SD
R
th (ch-c)
V
V
A
mA
V
V
S
pF
pF
pF
ns
ns
ns
ns
V
C/W
--
--
10
1
3.5
4.4
4.4
--
--
--
--
--
--
--
--
2.0
5.00
Symbol
Unit
Parameter
Test conditions
Limits
Min.
Typ.
Max.
PERFORMANCE CURVES
0
8
16
24
32
40
0
200
50
100
150
10
1
7
10
0
5
7
2
3
10
1
5
7
2
3
2
3
10
1
3
5 7
2
10
2
3
5 7
7
2
3
5
2
5
2
3
T
C
= 25
C
Single Pulse
100
s
tw =
10
s
DC
1ms
10ms
0
2
4
6
8
10
0
10
20
30
40
50
V
GS
= 20V,10V,8V
P
D
= 25W
T
C
= 25
C
Pulse Test
5V
6V
0
1.0
2.0
3.0
4.0
5.0
0
4
8
12
16
20
P
D
= 25W
V
GS
= 20V,10V,8V
T
C
= 25
C
Pulse Test
6V
5V
POWER DISSIPATION DERATING CURVE
CASE TEMPERATURE T
C
(
C)
POWER DISSIPATION P
D
(W)
MAXIMUM SAFE OPERATING AREA
DRAIN-SOURCE VOLTAGE V
DS
(V)
DRAIN CURRENT I
D
(A)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
DRAIN CURRENT I
D
(A)
DRAIN-SOURCE VOLTAGE V
DS
(V)
OUTPUT CHARACTERISTICS
(TYPICAL)
MITSUBISHI Nch POWER MOSFET
FS3KM-10A
HIGH-SPEED SWITCHING USE
Sep. 2001
0
2
4
6
8
10
10
2
2
10
1
3
5 7
2
10
0
3
5 7
2
10
1
3
5 7
T
C
= 25
C
Pulse Test
V
GS
= 10V
20V
0
2
4
6
8
10
0
4
8
12
16
20
T
C
= 25
C
V
DS
= 10V
Pulse Test
10
1
10
1
10
0
2
3
5
7
2
3
5
7
10
1
10
0
2
3
5
7
10
1
2
3
5
7
V
DS
= 10V
Pulse Test
T
C
= 25
C
75
C
125
C
10
0
3 5 7
10
1
3
2
2
5 7
10
2
3
2
3
2
5 7
10
1
3
5
7
10
2
2
2
2
3
5
7
10
3
2
3
5
7
Ciss
Coss
Crss
Tch = 25
C
V
GS
= 0V
f = 1MHz
10
1
10
1
10
0
2
3
5
7
2
3
5
7
10
1
5
7
10
2
2
3
5
7
2
3
5
Tch = 25
C
V
GS
= 10V
V
DD
= 200V
R
GEN
= R
GS
= 50
t
d(off)
t
d(on)
t
f
t
r
0
8
16
24
32
40
0
4
8
12
16
20
T
C
= 25
C
Pulse Test
I
D
= 4A
3A
2A
1A
ON-STATE VOLTAGE VS.
GATE-SOURCE VOLTAGE
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN-SOURCE ON-STATE
VOLTAGE V
DS (ON)
(V)
ON-STATE RESISTANCE VS.
DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
TRANSFER CHARACTERISTICS
(TYPICAL)
GATE-SOURCE VOLTAGE V
GS
(V)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER ADMITTANCE
VS. DRAIN CURRENT
(TYPICAL)
DRAIN CURRENT I
D
(A)
FORWARD TRANSFER
ADMITTANCE
y
fs
(S)
SWITCHING CHARACTERISTICS
(TYPICAL)
DRAIN-SOURCE VOLTAGE V
DS
(V)
CAPACITANCE VS.
DRAIN-SOURCE VOLTAGE
(TYPICAL)
DRAIN CURRENT I
D
(A)
CAPACITANCE
Ciss, Coss, Crss (pF)
SWITCHING TIME (ns)
DRAIN-SOURCE ON-STATE
RESISTANCE r
DS (ON)
(
)
MITSUBISHI Nch POWER MOSFET
FS3KM-10A
HIGH-SPEED SWITCHING USE
Sep. 2001
0
4
8
12
16
20
0
4
8
12
16
20
V
DS
= 100V
400V
200V
T
C
h = 25
C
I
D
= 3A
0
2
4
6
8
10
0
0.8
1.6
2.4
3.2
4.0
V
GS
= 0V
Pulse Test
T
C
= 125
C
75
C
25
C
10
1
10
0
2
3
5
7
10
1
2
3
5
7
50
0
50
100
150
V
GS
= 10V
I
D
= 1A
Pulse Test
0
1.0
2.0
3.0
4.0
5.0
50
0
50
100
150
V
DS
= 10V
I
D
= 1mA
0.4
0.6
0.8
1.0
1.2
1.4
50
0
50
100
150
V
GS
= 0V
I
D
= 1mA
10
2
10
1
2
3
5
7
10
0
2
3
5
7
10
1
2
3
5
7
10
4
2 3 5 7
2 3 5 7
2 3 5 7
2 3 5 7
10
0
2 3 5 7
10
1
2 3 5 7
10
2
10
3
10
2
10
1
P
DM
tw
D
=
T
tw
T
D = 1.0
= 0.5
= 0.2
= 0.1
Single Pulse
= 0.05
= 0.02
= 0.01
GATE-SOURCE VOLTAGE
VS. GATE CHARGE
(TYPICAL)
GATE CHARGE Q
g
(nC)
GATE-SOURCE VOLTAGE V
GS
(V)
SOURCE-DRAIN DIODE
FORWARD CHARACTERISTICS
(TYPICAL)
SOURCE-DRAIN VOLTAGE V
SD
(V)
CHANNEL TEMPERATURE Tch (
C)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(t
C)
THRESHOLD VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
GATE-SOURCE THRESHOLD
VOLTAGE V
GS (th)
(V)
TRANSIENT THERMAL IMPEDANCE
CHARACTERISTICS
CHANNEL TEMPERATURE Tch (
C)
BREAKDOWN VOLTAGE VS.
CHANNEL TEMPERATURE
(TYPICAL)
PULSE WIDTH t
w
(s)
TRANSIENT THERMAL IMPEDANCE Z
th
(ch
c)
(
C/
W)
ON-STATE RESISTANCE VS.
CHANNEL TEMPERATURE
(TYPICAL)
DRAIN-SOURCE ON-STATE RESISTANCE r
DS (ON)
(25
C)
CHANNEL TEMPERATURE Tch (
C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(t
C)
DRAIN-SOURCE BREAKDOWN VOLTAGE V
(BR) DSS
(25
C)
SOURCE CURRENT I
S
(A)
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