Rev.1.00, May.28.2004, page 1 of 7
H5N2007FN
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0370-0100Z
Rev.1.00
May.28.2004
Features
Low on-resistance
Low leakage current
High speed switching
Outline
TO-220FN
1
2
3
D
S
G
1. Gate
2. Drain
3. Source
Absolute Maximum Ratings
(Ta = 25C)
Item
Symbol
Ratings
Unit
Drain to Source voltage
V
DSS
200
V
Gate to Source voltage
V
GSS
30
V
Drain current
I
D
25
A
Drain peak current
I
D (pulse)
Note1
100
A
Body-Drain diode reverse Drain current
I
DR
25
A
Body-Drain diode reverse Drain peak current
I
DR (pulse)
Note1
100
A
Avalanche current
I
AP
Note3
9
A
Avalanche energy
E
AR
Note3
5.4
mJ
Channel dissipation
Pch
Note2
30
W
Channel to case thermal impedance
ch-c
4.17
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at Tc = 25
C
3. STch = 25
C, Tch
150
C
H5N2007FN
Rev.1.00, May.28.2004, page 2 of 7
Electrical Characteristics
(Ta = 25C)
Item
Symbol
Min
Typ
Max
Unit
Test conditions
Drain to Source breakdown voltage
V
(BR)DSS
200
--
--
V
I
D
= 10 mA, V
GS
= 0
Zero Gate voltage drain current
I
DSS
--
--
1
A
V
DS
= 200 V, V
GS
= 0
Gate to Source leak current
I
GSS
--
--
0.1
A
V
GS
=
30 V, V
DS
= 0
Gate to Source cutoff voltage
V
GS(off)
3.0
--
4.0
V
V
DS
= 10 V, I
D
= 1 mA
Forward transfer admittance
|yfs|
13
22
--
S
I
D
= 12.5 A, V
DS
= 10 V
Note4
Static Drain to Source on state
resistance
R
DS(on)
--
0.036
0.047
I
D
= 12.5 A, V
GS
= 10 V
Note4
Input capacitance
Ciss
--
2200
--
pF
Output capacitance
Coss
--
410
--
pF
Reverse transfer capacitance
Crss
--
54
--
pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time
td(on)
--
35
--
ns
Rise time
tr
--
120
--
ns
Turn-off delay time
td(off)
--
110
--
ns
Fall time
tf
--
85
--
ns
I
D
= 12.5 A
V
GS
= 10 V
R
L
= 8
Rg = 10
Total Gate charge
Qg
--
56
--
nC
Gate to Source charge
Qgs
--
13
--
nC
Gate to Drain charge
Qgd
--
26
--
nC
V
DD
= 160 V
V
GS
= 10 V
I
D
= 25 A
Body-Drain diode forward voltage
V
DF
--
0.9
1.5
V
I
F
= 25 A, V
GS
= 0
Note4
Body-Drain diode reverse recovery time
trr
--
140
--
ns
Body-Drain diode reverse recovery
charge
Qrr
--
0.7
--
C
I
F
= 25 A, V
GS
= 0
diF/dt = 100 A/
s
Notes: 4. Pulse test
H5N2007FN
Rev.1.00, May.28.2004, page 3 of 7
Main Characteristics
40
30
20
10
0
50
100
150
200
300
100
30
10
3
1
1
3
10 30
100 300 1000
0.3
0.1
1000
Ta = 25
C
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
100
s
1 ms
PW = 10 ms (1shot)
DC Operation (Tc = 25
C)
10
s
Operation in
this area is
limited by R
DS(on)
100
80
60
40
20
0
4
8
12
16
20
100
80
60
40
20
0
2
4
6
8
10
10 V
V
GS
= 5 V
Tc = 75
C
25
C
25
C
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
6 V
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Pulse Test
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
5
4
3
2
1
0
4
8
12
16
20
1
5
20
100
2
10
50
0.2
0.1
0.05
0.02
0.01
I = 45 A
D
22.5 A
V = 10 V
GS
Pulse Test
Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I
D
(A)
Pulse Test
7 V
12.5 A
8 V
0.03
0.01
0.1 0.3
H5N2007FN
Rev.1.00, May.28.2004, page 4 of 7
0.200
0.160
0.120
0.080
0.040
40
0
40
80
120
160
0
0.2
0.5
2
5
20
50 100
100
20
50
5
10
2
0.5
1
0.2
1
10
25
C
Tc = 25
C
75
C
V = 10 V
GS
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
DS
V = 10 V
Pulse Test
I = 45 A
D
Switching Time t (ns)
Drain Current I
D
(A)
Switching Characteristics
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
0
20
40
60
80
100
2000
5000
1000
100
200
500
500
400
300
200
100
0
20
16
12
8
4
20
40
60
80
100
0
10000
1000
10
100
0.1
0.3
1
3
10
30
100
20
50
10
I = 45 A
D
V
DD
V
GS
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / s
V = 0, Ta = 25
C
GS
V = 160 V
100 V
50 V
DS
r
t
d(on)
t
d(off)
t
t f
V = 10 V, V = 100 V
PW = 5
s, duty < 1 %
R =10
GS
DD
G
r
t
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Gate Charge Qg (nC)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
t f
10000
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
22.5 A
12.5 A
V = 50 V
100 V
160 V
DS
H5N2007FN
Rev.1.00, May.28.2004, page 5 of 7
0
0.4
0.8
1.2
1.6
2.0
100
80
60
40
20
5
4
3
2
1
-50
0
50
100
150
200
0
Case Temperature Tc (
C)
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage
V (V)
GS(off)
V = 10 V
DS
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
V = 0 V
GS
10 V
5 V
I = 10mA
D
1mA
0.1mA
Normalized Transient Thermal Impedance vs. Pulse Width
10
100
1 m
10 m
100 m
1
10
Pulse Width PW (s)
1
0.3
0.1
0.03
0.01
3
Normalized Transient Thermal Impedance
s (t)
0.001
0.003
1shot pulse
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Tc = 25
C
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 4.17
C/W, Tc = 25
C
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