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Электронный компонент: H5N2008P

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Rev.3.00 Nov.24.2004 page 1 of 6
H5N2008P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0390-0300
Rev.3.00
Nov.24.2004
Features
Low on-resistance
Low leakage current
High speed switching
Outline
TO-3P
1
2
3
D
S
G
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol
Ratings
Unit
Drain to Source voltage
V
DSS
200 V
Gate to Source voltage
V
GSS
30 V
Drain current
I
D
96 A
Drain peak current
I
D (pulse)
Note1
192
A
Body-Drain diode reverse Drain current
I
DR
96 A
Body-Drain diode reverse Drain peak current
I
DR (pulse)
Note1
192
A
Avalanche current
I
AP
Note3
48
A
Avalanche energy
E
AR
Note3
153
mJ
Channel dissipation
Pch
Note2
150
W
Channel to case thermal impedance
ch-c 0.833
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at Tc = 25
C
3.
STch
=
25
C, Tch
150
C
H5N2008P
Rev.3.00 Nov.24.2004 page 2 of 6
Electrical Characteristics
(Ta = 25C)
Item Symbol
Min
Typ
Max
Unit
Test
conditions
Drain to Source breakdown voltage
V
(BR)DSS
200 --
-- V I
D
= 10 mA, V
GS
= 0
Zero Gate voltage Drain current
I
DSS
-- -- 1
A V
DS
= 200 V, V
GS
= 0
Gate to Source leak current
I
GSS
-- -- 0.1
A V
GS
=
30 V, V
DS
= 0
Gate to Source cutoff voltage
V
GS(off)
3.0 -- 4.5 V
V
DS
= 10 V, I
D
= 1 mA
Forward transfer admittance
|yfs|
35
58
--
S
I
D
= 48 A, V
DS
= 10 V
Note4
Static Drain to Source on state
resistance
R
DS(on)
-- 0.020
0.023
I
D
= 48 A, V
GS
= 10 V
Note4
Input capacitance
Ciss
--
4900
--
pF
Output capacitance
Coss
--
850
--
pF
Reverse transfer capacitance
Crss
--
95
--
pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time
t
d(on)
-- 60 --
ns
Rise time
t
r
--
370
--
ns
Turn-off delay time
t
d(off)
-- 220 -- ns
Fall time
t
f
--
270
--
ns
I
D
= 48 A
V
GS
= 10 V
R
L
= 2.1
Rg = 10
Total Gate charge
Qg
--
98
--
nC
Gate to Source charge
Qgs
--
25
--
nC
Gate to Drain charge
Qgd
--
44
--
nC
V
DD
= 160 V
V
GS
= 10 V
I
D
= 96 A
Body-Drain diode forward voltage
V
DF
-- 1.1 1.7 V
I
F
= 96 A, V
GS
= 0
Note4
Body-Drain diode reverse recovery time
trr
--
180
--
ns
Body-Drain diode reverse recovery
charge
Qrr -- 1.5 --
C
I
F
= 96 A, V
GS
= 0
diF/dt = 100 A/
s
Notes: 4. Pulse test
H5N2008P
Rev.3.00 Nov.24.2004 page 3 of 6
Main Characteristics
200
150
100
50
0
50
100
150
200
100
80
60
40
20
0
4
8
12
16
20
100
80
60
40
20
0
2
4
6
8
10
V
GS
= 5 V
6 V
Tc = 75
C
25
C
-25C
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
7 V
10 V
6
4
2
0
4
8
12
16
20
1
30
100
3
10
300
1000
0.02
0.01
0.005
0.1
0.05
0.002
0.001
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
8
I
D
= 96 A
48 A
20 A
Pulse Test
V
GS
= 10 V, 15 V
Pulse Test
5.5 V
6.5 V
300
100
30
10
3
1
1
3
10
30
300
1000
0.3
0.01
0.1
0.03
1000
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
100
Ta = 25
C
100
s
1 ms
10
s
Operation in
this area is
limited by R
DS(on)
PW = 10 m
s (1shot)
DC Operation
(Tc = 25
C)
H5N2008P
Rev.3.00 Nov.24.2004 page 4 of 6
0.1
0.08
0.06
0.04
0.02
-25 0
25
50
75
100 125
150
0
3
1
30
300
1000
1000
300
100
30
10
3
1
10
100
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
V
GS
= 10 V
Pulse Test
I
D
= 96 A
20 A
48 A
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
2
5
1
0
50
100
150
30000
10000
100000
1000
3000
400
0
16
300
12
200
8
100
4
40
80
120
160
200
0
10000
1000
10
100
0.1
0.3
1
3
10
30
100
300
100
30
10
V
GS
= 0
f = 1 MHz
Ciss
Coss
Crss
I
D
= 96 A
V
DS
V
GS
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Body-Drain Diode Reverse
Recovery Time
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
Typical Capacitance vs.
Drain to Source Voltage
Gate Charge Qg (nC)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
Drain Current I
D
(A)
Switching Time t (ns)
Switching Characteristics
di / dt = 100 A /
s
V
GS
= 0, Ta = 25
C
V
DD
= 160 V
100 V
50 V
td(on)
td(off)
V
GS
= 10 V, V
DD
= 100 V
PW = 5
s, duty < 1 %
Rg
= 10
tf
tf
tr
tr
V
DD
= 50 V
100 V
160 V
75
C
25
C
Tc =
-25C
V
DS
= 10 V
Pulse Test
H5N2008P
Rev.3.00 Nov.24.2004 page 5 of 6
0
0.4
0.8
1.2
1.6
2.0
100
40
V
GS
= 0 V
10 V
Source to Drain Voltage V
SD
(V)
Reverse Drain Current vs.
Source to Drain Voltage
Reverse Drain Current I
DR
(A)
Pulse Test
5
4
3
2
1
-25
0
50
100
150
25
125
75
0
Case Temperature Tc (
C)
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage
V
GS(off)
(V)
V
DS
= 10 V
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 100 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
10
90%
10%
t
f
Switching Time Test Circuit
Waveform
5 V
I
D
= 10 mA
1 mA
0.1 mA
20
60
80
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 0.833
C/W, Tc = 25C

Tc = 25
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Pulse Width PW (s)
Normalized Transient Thermal Impedance

s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
H5N2008P
Rev.3.00 Nov.24.2004 page 6 of 6
Package Dimensions
3.2 0.2
4.8 0.2
1.5
0.3
2.8
0.6 0.2
1.0 0.2
18.0 0.5
19.9 0.2
15.6 0.3
0.5
1.0
5.0 0.3
1.6
1.4 Max
2.0
2.0
14.9 0.2
3.6
0.9
1.0
5.45 0.5
5.45 0.5
Package Code
JEDEC
JEITA
Mass (reference value)
TO-3P
--
Conforms
5.0 g
As of January, 2003
Unit: mm
Ordering Information
Part Name
Quantity
Shipping Container
H5N2008P-E
30 pcs
Plastic magazine
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
production before ordering the product.
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