Rev.2.00, Jun.25.2004, page 1 of 9
H5N2305PF
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0026-0200Z
Rev.2.00
Jun.25.2004
Features
Low on-resistance
Low leakage current
High speed switching
Outline
1
2
3
D
G
TO-3PFM
S
1. Gate
2. Drain
3. Source
H5N2305PF
Rev.2.00, Jun.25.2004, page 2 of 9
Absolute Maximum Rating
(Ta = 25
C)
Item
Symbol
Rating
Unit
Drain to source voltage
V
DSS
230
V
Gate to source voltage
V
GSS
30
V
Drain current
I
D
35
A
Drain peak current
I
D (pulse)
Note1
140
A
Body-drain diode reverse drain
current
I
DR
35
A
Body-drain diode reverse drain
peak current
I
DR (pulse)
Note1
140
A
Avalanche current
I
AP
Note3
18
A
Channel dissipation
Pch
Note2
60
W
Channel to case thermal impedance
ch-c
2.08
C /W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at Tc = 25
C
3. STch = 25
C, Tch
150
C
H5N2305PF
Rev.2.00, Jun.25.2004, page 3 of 9
Electrical Characteristics
(Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test condition
Drain to Source breakdown
voltage
V
(BR)DSS
230
--
--
V
I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current
I
DSS
--
--
1
A
V
DS
= 230 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
= 30 V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
2.5
--
4.0
V
V
DS
= 10 V, I
D
= 1 mA
Forward transfer admittance
|yfs|
22
38
--
S
I
D
= 17.5A, V
DS
= 10 V
Note4
Static drain to source on state
resistance
R
DS(on)
--
0.030
0.038
I
D
= 17.5A, V
GS
= 10 V
Note4
Input capacitance
Ciss
--
5200
--
pF
Output capacitance
Coss
--
690
--
pF
Reverse transfer capacitance
Crss
--
50
--
pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time
td(on)
--
60
--
ns
Rise time
tr
--
130
--
ns
Turn-off delay time
td(off)
--
180
--
ns
Fall time
tf
--
120
--
ns
I
D
= 17.5 A
R
L
= 5.7
V
GS
= 10 V
Rg = 10
Total gate charge
Qg
--
105
--
nC
Gate to source charge
Qgs
--
25
--
nC
Gate to drain charge
Qgd
--
37
--
nC
V
DD
= 160 V
V
GS
= 10 V
I
D
= 35 A
Body-drain diode forward voltage V
DF
--
0.92
1.4
V
I
F
= 35 A, V
GS
= 0
Note4
Body-drain diode reverse recovery
time
trr
--
180
--
ns
Body-drain diode reverse recovery
charge
Qrr
--
1.3
--
C
I
F
= 35 A, V
GS
= 0
diF/dt = 100 A/
s
Notes: 4. Pulse test
H5N2305PF
Rev.2.00, Jun.25.2004, page 4 of 9
Main Characteristics
80
60
40
20
0
50
100
150
200
30
10
3
1
0.3
0.1
1
3
0.1 0.3
10
30 100 300 1000
100
80
60
40
20
0
4
8
12
16
20
100
80
60
40
20
0
2
4
6
8
10
0.03
0.01
100
300
1000
Ta = 25
C
V = 5 V
GS
7 V
Tc = 75
C
25
C
-25
C
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Pulse Test
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V = 10 V
DS
Pulse Test
100 s
1 ms
PW = 10 ms
(1shot)
DC Operation
(Tc = 25
C)
10 s
5.5 V
6 V
8 V
10 V
Operation in
this area is
limited by R
DS(on)
H5N2305PF
Rev.2.00, Jun.25.2004, page 5 of 9
2
1.6
1.2
0.8
0.4
0
4
8
12
16
20
1
20
300
1000
100
2
10
0.1
0.05
0.02
0.01
0.1
0.08
0.06
0.04
0.02
25
0
25
50
75
100 125 150
0
0.1 0.3
3
30
1000
100
20
50
5
10
2
0.5
1
0.2
0.1
1
10
300
100
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
25
C
Tc = 25
C
75
C
DS
V = 10 V
Pulse Test
V
GS
= 10 V
Pulse Test
5 A
Pulse Test
Pulse Test
V
GS
= 10 V,15V
I = 35 A
D
17.5 A
17.5 A
I
D
= 35 A
5 A
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