Rev.2.00 Nov. 19, 2004 page 1 of 6
H5N2519P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0478-0200
Rev.2.00
Nov.19.2004
Features
Low on-resistance
Low leakage current
High speed switching
Outline
TO-3P
1
2
3
D
S
G
1. Gate
2. Drain (Flange)
3. Source
Absolute Maximum Ratings
(Ta = 25C)
Item Symbol
Ratings
Unit
Drain to Source voltage
V
DSS
250 V
Gate to Source voltage
V
GSS
30 V
Drain current
I
D
65 A
Drain peak current
I
D (pulse)
Note1
195
A
Body-Drain diode reverse Drain current
I
DR
65 A
Avalanche current
I
AP
Note3
22
A
Avalanche energy
E
AR
Note3
30.2
mJ
Channel dissipation
Pch
Note2
150
W
Channel to case thermal impedance
ch-c 0.833
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at Tc = 25
C
3. STch
=
25
C, Tch
150
C
H5N2519P
Rev.2.00 Nov. 19, 2004 page 2 of 6
Electrical Characteristics
(Ta = 25C)
Item Symbol
Min
Typ
Max
Unit
Test
conditions
Drain to Source breakdown voltage
V
(BR)DSS
250 --
-- V I
D
= 10 mA, V
GS
= 0
Zero Gate voltage drain current
I
DSS
-- -- 1
A V
DS
= 250 V, V
GS
= 0
Gate to Source leak current
I
GSS
-- -- 0.1
A V
GS
=
30 V, V
DS
= 0
Gate to Source cutoff voltage
V
GS(off)
3.0 -- 4.5 V
V
DS
= 10 V, I
D
= 1 mA
Forward transfer admittance
|yfs|
28
47
--
S
I
D
= 32.5 A, V
DS
= 10 V
Note4
Static Drain to Source on state
resistance
R
DS(on)
-- 0.029
0.035
I
D
= 32.5 A, V
GS
= 10 V
Note4
Input capacitance
Ciss
--
4900
--
pF
Output capacitance
Coss
--
700
--
pF
Reverse transfer capacitance
Crss
--
75
--
pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time
td(on)
--
65
--
ns
Rise time
tr
--
310
--
ns
Turn-off delay time
td(off)
--
220
--
ns
Fall time
tf
--
220
--
ns
I
D
= 32.5 A
V
GS
= 10 V
R
L
= 3.9
Rg = 10
Total Gate charge
Qg
--
120
--
nC
Gate to Source charge
Qgs
--
28
--
nC
Gate to Drain charge
Qgd
--
52
--
nC
V
DD
= 200 V
V
GS
= 10 V
I
D
= 65 A
Body-Drain diode forward voltage
V
DF
-- 1.10
1.65
V
I
F
= 65 A, V
GS
= 0
Note4
Body-Drain diode reverse recovery time
trr
--
200
--
ns
Body-Drain diode reverse recovery
charge
Qrr -- 1.6 --
C
I
F
= 65 A, V
GS
= 0
diF/dt = 100 A/
s
Notes: 4. Pulse test
H5N2519P
Rev.2.00 Nov. 19, 2004 page 3 of 6
Main Characteristics
200
150
100
50
0
50
100
150
200
300
100
30
10
3
1
1
3
10
30
100
300
1000
0.3
0.1
1000
Ta = 25
C
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
100
s
1 ms
PW = 10 ms (1shot)
DC Operatio
n (Tc = 25
C)
10
s
Operation in
this area is
limited by R
DS(on)
100
80
60
40
20
0
4
8
12
16
20
100
80
60
40
20
0
2
4
6
8
10
10 V
V
GS
= 4.5 V
5.5 V
Tc = 75
C
25
C
25
C
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
6 V
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Pulse Test
6.5 V
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
2.5
2
1.5
1
0.5
0
4
8
12
16
20
1
5
20
100
2
10
50
0.2
0.1
0.05
0.02
0.01
I = 65 A
D
32.5 A
10 A
V = 10 V
GS
Pulse Test
Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I
D
(A)
Pulse Test
5 V
7 V
H5N2519P
Rev.2.00 Nov. 19, 2004 page 4 of 6
0.100
0.080
0.060
0.040
0.020
40
0
40
80
120
160
0
0.2
0.5
2
5
20
50 100
100
20
50
5
10
2
0.5
1
0.2
1
10
25
C
Tc = 25
C
75
C
V = 10 V
GS
10 A
32.5 A
I = 65 A
D
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
DS
V = 10 V
Pulse Test
Switching Time t (ns)
Drain Current I
D
(A)
Switching Characteristics
0.1
0.3
1
3
10
30
100
1000
200
500
100
20
50
10
0
20
40
60
80
100
2000
5000
1000
100
200
500
500
400
300
200
100
0
20
16
12
8
4
40
80
120
160
200
0
10000
1000
10
100
0.1
0.3
1
3
10
30
100
20
50
10
V = 50 V
100 V
200 V
DS
I = 65 A
D
V
DD
V
GS
Body-Drain Diode Reverse
Recovery Time
di / dt = 100 A / s
V = 0, Ta = 25
C
GS
V = 200 V
100 V
50 V
DS
r
t
d(on)
t
d(off)
t
t f
V = 10 V, V = 125 V
PW = 5
s, duty < 1 %
R =10
GS
DD
g
r
t
Reverse Drain Current I
DR
(A)
Reverse Recovery Time trr (ns)
Gate Charge Qg (nC)
Drain to Source Voltage V
DS
(V)
Gate to Source Voltage V
GS
(V)
Dynamic Input Characteristics
t f
10000
Typical Capacitance vs.
Drain to Source Voltage
Capacitance C (pF)
Drain to Source Voltage V
DS
(V)
V = 0
f = 1 MHz
GS
Ciss
Coss
Crss
H5N2519P
Rev.2.00 Nov. 19, 2004 page 5 of 6
0
0.4
0.8
1.2
1.6
2.0
100
80
60
40
20
5
4
3
2
1
-50
0
50
100
150
200
0
Case Temperature Tc (
C)
Gate to Source Cutoff Voltage
vs. Case Temperature
Gate to Source Cutoff Voltage
V (V)
GS(off)
V = 10 V
DS
Source to Drain Voltage V
SD
(V)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Pulse Test
V = 0 V
GS
10 V
5 V
Vin Monitor
D.U.T.
Vin
10 V
R
L
V
= 125 V
DD
tr
td(on)
Vin
90%
90%
10%
10%
Vout
td(off)
Vout
Monitor
10
90%
10%
t
f
Switching Time Test Circuit
Waveform
3
1
0.3
0.1
0.03
0.01
10
100
1 m
10 m
100 m
1
10
DM
P
PW
T
D =
PW
T
ch c(t) = s (t) ch c
ch c = 0.833
C/W, Tc = 25
C
Tc = 25
C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
1shot pulse
Pulse Width PW (s)
Normalized Transient Thermal Impedance
s (t)
Normalized Transient Thermal Impedance vs. Pulse Width
I = 10 mA
D
1 mA
0.1 mA
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