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Электронный компонент: H5N3003

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Rev.2.00, Aug.01.2003, page 1 of 9
H5N3003P
Silicon N Channel MOS FET
High Speed Power Switching
REJ03G0007-0200Z
(Previous ADE-208-1547A(Z))
Rev.2.00
Aug.01.2003
Features
Low on-resistance
Low leakage current
High Speed Switching
Outline
TO-3P
1
2
3
D
S
G
1. Gate
2. Drain (Flange)
3. Source
H5N3003P
Rev.2.00, Aug.01.2003, page 2 of 9
Absolute Maximum Ratings
(Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
300
V
Gate to source voltage
V
GSS
30
V
Drain current
I
D
40
A
Drain peak current
I
D
(pulse)
Note1
160
A
Body-drain diode reverse drain
current
I
DR
40
A
Body-drain diode reverse
drain peak current
I
DR
(pulse)
Note1
160
A
Avalanche current
I
AP
Note3
30
A
Channel dissipation
Pch
Note2
150
W
Channel to case Thermal
Impedance
ch-c
0.833
C /W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at Tc = 25
C
3. Tch
150
C
H5N3003P
Rev.2.00, Aug.01.2003, page 3 of 9
Electrical Characteristics
(Ta = 25
C)
Item
Symbol Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown voltage V
(BR)DSS
300
--
--
V
I
D
= 10mA, V
GS
= 0
Zero gate voltage drain current
I
DSS
--
--
1
A
V
DS
= 300V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
= 30V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
3.0
--
4.0
V
V
DS
= 10V, I
D
= 1mA
Forward transfer admittance
|y
fs
|
20
35
--
S
I
D
= 20A, V
DS
= 10V
Note4
Static drain to source on state
resistance
R
DS(on)
--
0.058
0. 069
I
D
= 20A, V
GS
= 10V
Note4
Input capacitance
Ciss
--
5150
--
pF
V
DS
= 25V
Output capacitance
Coss
--
560
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
90
--
pF
f = 1MHz
Turn-on delay time
td(on)
--
60
--
ns
I
D
= 20A
Rise time
tr
--
185
--
ns
R
L
= 7.5
Turn-off delay time
td(off)
--
220
--
ns
V
GS
= 10V
Fall time
tf
--
150
--
ns
Rg=10
Total gate charge
Qg
--
130
--
nC
V
DD
= 240V
Gate to source charge
Qgs
--
25
--
nC
V
GS
= 10V
Gate to drain charge
Qgd
--
60
--
nC
I
D
= 40A
Bodydrain diode forward voltage
V
DF
--
1.0
1.5
V
I
F
= 40A, V
GS
= 0
Bodydrain diode reverse recovery
time
trr
--
280
--
ns
I
F
= 40A, V
GS
= 0
diF/dt=100A/
s
Bodydrain diode reverse recovery
charge
Qrr
--
2.5
--
C
Notes: 4. Pulse test
H5N3003P
Rev.2.00, Aug.01.2003, page 4 of 9
Main Characteristics
200
150
100
50
0
50
100
150
200
300
100
30
10
3
1
1
3
10
30
100
300
1000
100
80
60
40
20
0
4
8
12
16
20
100
80
60
40
20
0
2
4
6
8
10
0.3
0.1
1000
Ta = 25
C
10 V
V
GS
= 5 V
5.5 V
Tc = 75
C
25
C
25
C
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
100
s
1 ms
PW = 10 ms (1shot)
DC Operation (
Tc = 25
C)
10
s
6 V
7 V
8 V
Operation in
this area is
limited by R
DS(on)
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
V
DS
= 10 V
Pulse Test
Pulse Test
H5N3003P
Rev.2.00, Aug.01.2003, page 5 of 9
Gate to Source Voltage V
GS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(V)
5
4
3
2
1
0
4
8
12
16
20
1
5
20
100
2
10
50
0.2
0.1
0.05
0.02
0.01
0.2
0.16
0.12
0.08
0.04
40
0
40
80
120
160
0
0.2
0.5
2
5
20
50 100
100
20
50
5
10
2
0.5
1
0.2
1
10
25
C
Tc = 25
C
75
C
V = 10 V
GS
10 A
20 A
I = 40 A
D
I = 40 A
D
20 A
10 A
V = 10 V,15 V
GS
Pulse Test
Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current I
D
(A)
Pulse Test
Case Temperature Tc (
C)
Static Drain to Source on State Resistance
R
DS(on)
(
)
Static Drain to Source on State Resistance
vs. Temperature
Pulse Test
Drain Current I
D
(A)
Forward Transfer Admittance vs.
Drain Current
Forward Transfer Admittance |yfs| (S)
DS
V = 10 V
Pulse Test