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Электронный компонент: H5N5005PL

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Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
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H5N5005PL
Silicon N Channel MOS FET
High Speed Power Switching
ADE-208-1382 (Z)
Target Specification 1st. Edition
Mar. 2001
Features
Low on-resistance: R
DS(on)
= 0.064
typ.
Low leakage current: IDSS = 10
A max (at VDS = 500 V)
High speed switching: tf = 300 ns typ (at VGS = 10 V, VDD = 250 V, ID = 30 A)
Low gate charge: Qg = 300 nC typ (at VDD = 400 V, VGS = 10 V, ID = 60 A)
Avalanche ratings
Built-in fast recovery diode: trr = 220 ns typ
Outline
TO-3PL
D
G
S
1
2
3
1. Gate
2. Drain (Flange)
3. Source
H5N5005PL
2
Absolute Maximum Ratings (Ta = 25
C)
Item
Symbol
Ratings
Unit
Drain to source voltage
V
DSS
500
V
Gate to source voltage
V
GSS
30
V
Drain current
I
D
60
A
Drain peak current
I
D
(pulse)
Note1
240
A
Body-drain diode reverse drain
current
I
DR
60
A
Body-drain diode reverse drain peak
current
I
DR
(pulse)
Note1
240
A
Avalanche current
I
AP
Note3
18
A
Channel dissipation
Pch
Note2
270
W
Channel to case Thermal Impedance
ch-c
0.463
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10
s, duty cycle
1%
2. Value at Tc = 25
C
3. Tch
150
C
H5N5005PL
3
Electrical Characteristics (Ta = 25
C)
Item
Symbol
Min
Typ
Max
Unit
Test Conditions
Drain to source breakdown
voltage
V
(BR)DSS
500
--
--
V
I
D
= 10 mA, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A
V
GS
=
30 V, V
DS
= 0
Zero gate voltage drain current
I
DSS
--
--
10
A
V
DS
= 500 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
2.0
--
4.0
V
V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
--
0.064
0.075
I
D
= 30 A, V
GS
= 10 V
Note4
Forward transfer admittance
|y
fs
|
30
50
--
S
I
D
= 30 A, V
DS
= 10 V
Note4
Input capacitance
Ciss
--
10550
--
pF
V
DS
= 25 V
Output capacitance
Coss
--
1060
--
pF
V
GS
= 0
Reverse transfer capacitance
Crss
--
180
--
pF
f = 1 MHz
Turn-on delay time
td(on)
--
115
--
ns
I
D
= 30 A
Rise time
tr
--
380
--
ns
V
GS
= 10 V
Turn-off delay time
td(off)
--
560
--
ns
R
L
= 8.33
Fall time
tf
--
300
--
ns
Rg = 10
Total gate charge
Qg
--
300
--
nC
V
DD
= 400 V
Gate to source charge
Qgs
--
40
--
nC
V
GS
= 10 V
Gate to drain charge
Qgd
--
155
--
nC
I
D
= 60 A
Body-drain diode forward
voltage
V
DF
--
1.05
1.6
V
I
F
= 60 A, V
GS
= 0
Body-drain diode reverse
recovery time
trr
--
220
--
ns
I
F
= 60 A, V
GS
= 0
Body-drain diode reverse
recovery charge
Qrr
--
2.0
--
C
diF/dt = 100 A/
s
Note:
4. Pulse test