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Электронный компонент: H5N6001P

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H5N6001P
Silicon N-Channel MOSFET
High-Speed Power Switching
ADE-208-1425A (Z)
2nd. Edition
May 2001
Features
Low on-resistance
Low leakage current
High speed switching
Low gate charge (Qg)
Outline
TO-3P
1
2
3
D
S
G
1. Gate
2. Drain (Frange)
3. Source
H5N6001P
Rev.0, May 2001, page 2 of 2
Absolute Maximum Ratings (Ta = 25



C)
Item Symbol
Value
Unit
Drain to source voltage
V
DSS
600 V
Gate to source voltage
V
GSS
30 V
Drain current
I
D
20
A
Drain peak current
I
D
(pulse)*
1
80
A
Body-drain diode reverse drain
current
I
DR
20 A
Body-drain diode reverse drain peak
current
I
DR
(pulse)*
1
80
A
Avalanche current
I
AP
*
3
6.5 A
Channel dissipation
Pch*
2
150 W
Channel to case thermal inpedance
ch-c
0.833
C/W
Channel temperature
Tch
150
C
Storage temperature
Tstg
55 to +150
C
Notes: 1. PW
10 s, duty cycle 1%
2. Value at Tc = 25
C
3.
Tch
150C
H5N6001P
Rev.0, May 2001, page 3 of 3
Electrical Characteristics (Ta = 25



C)
Item Symbol
Min
Typ
Max
Unit
Test
conditions
Drain to source breakdown
voltage
V
(BR)DSS
600 --
-- V
I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
--
-- 1
A V
DS
= 600 V, V
GS
= 0
Gate to source leak current
I
GSS
--
--
0.1
A V
GS
=
30 V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
3.0 -- 4.0 V
V
DS
= 10 V, I
D
= 1 mA
Forward transfer admittance
|y
fs
| 12 20 -- S
I
D
= 10 A, V
DS
= 10 V*
4
Static drain to source on state
resistance
R
DS(on)
-- 0.30
0.38
I
D
= 10 A, V
GS
= 10 V*
4
Input capacitance
Ciss
-- 4640
-- pF
V
DS
= 25 V
Output capacitance
Coss
-- 340 -- pF
V
GS
= 0
Reverse transfer capacitance
Crss
-- 70 --
pF
f = 1 MHz
Turn-on delay time
td(on)
-- 60 -- ns
V
DD
300 V, I
D
= 10 A
Rise time
tr
-- 100 -- ns
V
GS
= 10 V
Turn-off delay time
td(off)
-- 220 -- ns
R
L
= 30
Fall time
tf
-- 90 --
ns
Rg = 10
Total gate charge
Qg
-- 135 -- nC
V
DD
= 480 V
Gate to source charge
Qgs
-- 20 -- nC
V
GS
= 10 V
Gate to drain charge
Qgd
-- 65 -- nC
I
D
= 20 A
Body-drain diode forward
voltage
V
DF
-- 0.9 1.4 V
I
F
= 20 A, V
GS
= 0
Body-drain diode reverse
recovery time
trr
-- 590 -- ns
I
F
= 20 A, V
GS
= 0
diF/dt = 100 A/
s
Body-drain diode reverse
recovery charge
Qrr
-- 6.5 --
C
Note: 4.
Pulse
test
H5N6001P
Rev.0, May 2001, page 4 of 4
Main Characteristics
200
150
100
50
0
50
100
150
200
30
10
3
1
0.3
0.1
1
3
10
30
100
300
1000
50
40
30
20
10
0
4
8
12
16
20
50
40
30
20
10
0
2
4
6
8
10
0.03
0.01
100
Ta = 25
C
10 V
V = 4.5 V
GS
5 V
5.5 V
Tc = 75
C
25
C
-25
C
Channel Dissipation Pch (W)
Case Temperature Tc (
C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
DS
Drain Current I (A)
D
Maximum Safe Operation Area
Drain to Source Voltage V (V)
Drain Current I (A)
D
Typical Output Characteristics
DS
Pulse Test
Gate to Source Voltage V (V)
GS
Drain Current I (A)
Typical Transfer Characteristics
D
V = 10 V
DS
Pulse Test
100
s
1 ms
PW = 10 ms (1shot)
DC Operation
(Tc = 25
C)
10
s
6 V
8 V
Operation in
this area is
limited by R
DS(on)
H5N6001P
Rev.0, May 2001, page 5 of 5
8
6
4
2
0
4
8
12
16
20
1
5
20
100
2
10
50
2
1
0.5
0.2
0.1
1
0.8
0.6
0.4
0.2
25
0
25
50
75
100 125 150
0
0.1 0.2
2
20
0.5
5
50 100
100
20
50
5
10
2
0.5
1
0.2
0.1
1
10
Drain to Source Saturation Voltage VS.
Gate to Source Voltage
Static Drain to Source on State Resistance
vs. Drain Current
10
25
C
Tc = 25
C
75
C
DS
V = 10 V
Pulse Test
V = 10 V
GS
Pulse Test
I = 20 A
D
10 A
5 A
Pulse Test
10 A
5 A
I = 20 A
D
Gate to Source Voltage V (V)
V (V)
DS(on)
Drain to Source Saturation Voltage
Drain Current I (A)
Drai to Source on State Resistance
R
DS(on)
Pulse Test
V
GS
= 10 V, 15 V
GS
D
(
)
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance vs.
Drain Current
Case Temparature Tc (
C)
Drain Current I (A)
D
Static Drain to Source on State Resistance
(
)
R
DS(on)
|yfs| (S)
Forward Transfer Admittance