Regarding the change of names mentioned in the document, such as Hitachi
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these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
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Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
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H7N0312LD, H7N0312LS, H7N0312LM
Rev.1, Aug. 2002, page 3 of 11
Electrical Characteristics
(Ta = 25C)
Item Symbol
Min
Typ
Max
Unit
Test
Conditions
Drain to source breakdown voltage V
(BR)DSS
30
--
-- V I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
20 --
-- V I
G
= 100
A, V
DS
= 0
Gate to source leak current
I
GSS
--
-- 10
A V
GS
= 16 V, V
DS
= 0
Zero gate voltage drain current
I
DSS
--
-- 10
A V
DS
= 30 V, V
GS
= 0
Gate to source cutoff voltage
V
GS(off)
1.0 -- 2.5 V I
D
= 1 mA, V
DS
= 10 V
Note1
Static drain to source on state
R
DS(on)
-- 2.6 3.3 m
I
D
= 42.5 A, V
GS
= 10 V
Note1
resistance
-- 4.0 5.8 m
I
D
= 42.5 A, V
GS
= 4.5 V
Note1
Forward transfer admittance
|y
fs
| 75 125
-- S I
D
= 42.5 A, V
DS
= 10 V
Note1
Input capacitance
Ciss
-- 6900
-- pF V
DS
= 10 V
Output capacitance
Coss
-- 1750
-- pF V
GS
= 0
Reverse transfer capacitance
Crss
-- 820
--
pF
f = 1 MHz
Total gate charge
Qg
-- 115
-- nc V
DD
= 10 V
Gate to source charge
Qgs
-- 24 -- nc V
GS
= 10 V
Gate to drain charge
Qgd
-- 24 -- nc I
D
= 85 A
Turn-on delay time
t
d(on)
-- 45 -- ns V
GS
= 10 V, I
D
= 42.5 A
Rise time
t
r
-- 380
-- ns R
L
= 0.24
Turn-off delay time
t
d(off)
-- 125
-- ns R
g
= 4.7
Fall time
t
f
-- 50 -- ns
Bodydrain diode forward voltage
V
DF
-- 0.92
-- V I
F
= 85 A, V
GS
= 0
Bodydrain diode reverse recovery
time
t
rr
-- 75 -- ns I
F
= 85 A, V
GS
= 0
diF/ dt = 50A/
s
Notes: 1. Pulse test
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