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Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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(iii) prevention against any malfunction or mishap.
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H7N0602LD, H7N0602LS, H7N0602LM
Rev.3, May 2002, page 3 of 11
Electrical Characteristics
(Ta = 25
C)
Item
Symbol
Min Typ Max Unit Test
Conditions
Drain to source breakdown
voltage
V
(BR)DSS
60
--
-- V I
D
= 10 mA, V
GS
= 0
Gate to source breakdown voltage V
(BR)GSS
20 --
--
V
I
G
= 100
A, V
DS
= 0
Zero gate voltage drain current
I
DSS
--
-- 10
A V
DS
= 60 V, V
GS
= 0
Gate to source leak current
I
GSS
--
-- 10
A V
GS
= 16 V, V
DS
= 0
Gate to source cutoff voltage
V
GS(off)
1.5 -- 2.5 V V
DS
= 10 V, I
D
= 1 mA
Note
1
Forward transfer admittance
|y
fs
| 70 120
-- S I
D
= 45 A, V
DS
= 10 V
Note
1
Static drain to source on state
resistance
R
DS(on)
-- 4.1 5.2 m
I
D
= 45 A, V
GS
= 10 V
note
1
Static drain to source on state
resistance
R
DS(on)
-- 6.2 9.0 m
I
D
= 45 A, V
GS
=4.5 V
Note
1
Input capacitance
Ciss
-- 9000
-- pF V
DS
= 10 V
Output capacitance
Coss
-- 1000
-- pF V
GS
= 0
Reverse transfer capacitance
Crss
-- 470
--
pF
f = 1 MHz
Total gate charge
Qg
-- 140
-- nc V
DD
= 25 V
Gate to source charge
Qgs
-- 30 -- nc V
GS
= 10 V
Gate to drain charge
Qgd
-- 30 -- nc I
D
= 85 A
Turn-on delay time
td(on)
-- 55 -- ns V
GS
= 10 V
Rise time
tr
-- 290
-- ns I
D
= 45 A
Turn-off delay time
td(off)
-- 140
-- ns R
L
= 0.67
Fall time
tf
-- 50 -- ns R
g
= 4.7
Bodydrain diode forward voltage V
DF
-- 0.95
-- V I
F
= 85 A, V
GS
= 0
Bodydrain diode reverse
recovery time
trr
-- 45 -- ns I
F
= 85 A, V
GS
= 0
diF/dt = 100 A/s
Notes: 1. Pulse test
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