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Электронный компонент: HA17904APS

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April 1, 2003
To all our customers
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HA17904A Series
Dual Operational Amplifier
ADE-204-069 (Z)
Rev.0
May 2001
Description
HA17904A series are dual operational amplifier that provide high gain and internal phase compensation,
with single power supply. They can be widely applied to control equipments and to general use.
Features
Wide range of supply voltage, and single power supply used
Wide range of common mode voltage, and possible to operate with an input about 0 V, and output
around 0 V is available
Frequency characteristics and input bias current are temperature compensated
Low electro-magnetic susceptibility level
Output Offset Voltage vs. Input Interference
Measurement Condition
Output offset voltage
(arb. unit)
5.0
4.0
3.0
2.0
1.0
0
-1.0
100E+3
1E+6
10E+6
100E+6
1E+9
10E+9
Input RF frequency (Hz)
HA17904A series
HA17904 series
Rs
-
+
Rs
0.01
Vin
-10 dBm
RF signal source
(for quasi-RF noise)
Vcc = +7.5 V
Vee =
-7.5 V
Rf
Rf
Vout
(= 100
Vio)
V
_
Improve-
ment
HA17904A Series
Rev.0, May 2001, page 2 of 9
Ordering Information
Type No.
Application
Package
HA17904APS Industrial
use DP-8B
HA17904AFP
FP-8D
Pin Arrangement
- +
Vout1
Vin(
-)1
Vin(+)1
GND
V
CC
Vout2
Vin(
-)2
Vin(+)2
+
-
8
7
6
5
1
2
3
4
(Top View)
1
2
Circuit Schematic (1/2)
Q
1
Q
4
Q
2
Q
3
Q
5
Q
6
Q
7
Q
13
Q
12
Q
11
Q
10
Q
8
Q
9
Vout
R
1
Vin(+)
Vin(
-)
C
HA17904A Series
Rev.0, May 2001, page 3 of 9
Absolute Maximum Ratings
(Ta = 25
C)
Ratings
Item
Symbol
HA17904APS HA17904AFP
Unit
Supply voltage
V
CC
32 32 V
Sink current
Isink
50
50
mA
Power dissipation
P
T
570
*
1
385
*
2
mW
Common mode input voltage
V
CM
-0.3 to V
CC
-0.3 to V
CC
V
Differential input voltage
Vin (diff)
V
CC
V
CC
V
Operating temperature
Topr
-40 to +85
-40 to +85
C
Storage temperature
Tstg
-55 to +125
-55 to +125
C
Notes: 1. This is the allowable values up to Ta = 50
C. Derate by 8.3 mW/C.
2. These are the allowable values up to Ta = 25
C mounting in air.
When it is mounted on glass epoxy board of 40 mm
40 mm 1.5 mmt with 30% wiring density,
the allowable value is 570 mW up to Ta = 45
C. If Ta > 45C, derate by 7.14 mW/C.
HA17904A Series
Rev.0, May 2001, page 4 of 9
Electrical Characteristics
(V
CC
= +15 V, Ta = 25
C)
Item Symbol
Min
Typ
Max
Unit
Test
Conditions
Input offset voltage
V
IO
-- 3 7 mV
V
CM
= 7.5V, R
S
= 50
, Rf = 50k
Input offset current
I
IO
--
5
50
nA
V
CM
= 7.5V, I
IO
=
| I
I (+)
I
I ()
|
Input bias current
I
IB
--
30
250
nA
V
CM
= 7.5V
Power source rejection
ratio
PSRR
-- 93 -- dB
R
S
= 1k
, Rf = 100k
Voltage gain
A
VD
75 90 -- dB
R
L
=
, R
S
= 1k
, Rf = 100k
Common mode rejection
ratio
CMR -- 80 -- dB
R
S
= 50
, Rf = 5k
V
CM (+)
13.5
-- -- V R
S
= 1k
, Rf = 100k
Common mode input
voltage range
V
CM ()
-- -- 0.3
V R
S
= 1k, Rf = 100k
Peak-to-peak output
voltage
Vop-p
--
13.6
--
V
f = 100Hz, R
L
= 20k
, R
S
= 1k
,
Rf = 100k
Output
source
current Iosource
20 40 -- mA
V
IN
+
= 1V, V
IN
= 0V, V
OH
= 10V
Output sink current
Iosink
10
20
--
mA
V
IN
= 1V, V
IN
+
= 0V, V
OL
= 2.5V
Output sink current
Iosink
15
50
--
A V
IN
= 1V, V
IN
+
= 0V,
Vout = 200mV
Supply current
I
CC
--
0.8
2
mA
V
IN
= GND, R
L
=
Slew
rate
SR -- 0.2 -- V/
s R
L
=
, V
CM
= 7.5V, f = 1.5kHz
Channel separation
CS
--
120
--
dB
f = 1kHz
HA17904A Series
Rev.0, May 2001, page 5 of 9
Characteristic Curves
Output Source Current vs. Ambient Temperature
80
Output source current Iosource (mA)
Ambeint temperature Ta (
C)
70
60
50
40
30
20
10
0
-20
0
20
40
60
80
V
CC
= 15 V
V
OH
= 10 V
Input Bias Current vs. Ambient Temperature
80
Input bias current I
IB
(nA)
Ambeint temperature Ta (
C)
70
60
50
40
30
20
10
0
-20
0
20
40
60
80
V
CC
= 15 V
V
CM
= 7.5 V
Supply Current vs. Supply Voltage
4
Supply current I
CC
(mA)
Supply voltage V
CC
(V)
3
2
1
0
8
16
24
32
40
Ta = 25
C
80
Input bias current I
IB
(nA)
Supply voltage V
CC
(V)
60
40
20
0
8
16
24
32
40
Ta = 25
C
Voltage Gain vs. Supply Voltage
160
Voltage gain A
VD
(dB)
Supply voltage V
CC
(V)
120
80
40
0
8
16
24
32
40
Ta = 25
C
R
L
=
Maxlmum Output Voltage vs. Frequency
Input Bias Current vs. Supply Voltage
20
Maximum output voltage V
OP
-
P
(V)
Frequency f (Hz)
1 k
3 k
10 k
30 k
100 k 300 k
16
12
8
4
0
V
CC
= 15 V
Ta = 25
C
R
L
= 20 k
1 M
HA17904A Series
Rev.0, May 2001, page 6 of 9
Voltage Gain vs. Frequency
V
CC
= 15V
Ta = 25
C
R
L
=
Voltage gain A
VD
(dB)
120
100
80
60
40
20
0
1
3
10
30
100
300
1 k
3 k
10 k
30 k
100 k 300 k
1 M
Frequency f (Hz)
V
CC
= 15V
Ta = 25
C
R
S
= 50
120
100
80
60
40
20
0
100
300
1 k
3 k
10 k
30 k
100 k 300 k
1M
Frequency f (Hz)
Common Mode Rejection Ratio vs. Frequency
Common mode rejection ratio CMR (dB)
HA17904A Series
Rev.0, May 2001, page 7 of 9
Solder Mounting Method
1. Small and light surface-mount packages require spicial attentions on solder mounting.
On solder mounting, pre-heating before soldering is needed.
The following figure show an example of infrared rays refow.
2. The difference of thermal expansion coefficeient between mounted substrates and IC leads may cause a
failure like solder peeling or soler wet, and electrical characteristics may change by thermal stress.
Therefore, mounting should be done after sufficient confirmation for especially in case of ceramic
substrates.
Temperature
140 to 160
C
1 to 5
C/s
235
C Max
10 s Max
1 to 4
C/s
Time (s)
60 s
Figure 1 An Example of Infrared Rays Reflow Conditions
HA17904A Series
Rev.0, May 2001, page 8 of 9
Package Dimensions
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
DP-8B
Conforms
Conforms
0.51 g
Unit: mm
1
4
5
8
9.6
10.6 Max
0.89
1.3
6.3
7.4 Max
5.06 Max
2.54
0.25
0.48
0.10
7.62
0.25
+ 0.10
- 0.05
0
- 15
2.54 Min
0.5 Min
1.27 Max
Hitachi Code
JEDEC
EIAJ
Mass (reference value)
FP-8D
--
Conforms
0.10 g
Unit: mm
*Dimension including the plating thickness
Base material dimension
0.10 0.10
2.03 Max
4.4
*0.22 0.05
4.85
0.75 Max
0.40 0.06
0.60
+ 0.25
0.18
*0.42 0.08
0.12
0.15
0 8
M
8
5
1
4
1.05
5.25 Max
1.27
0.20 0.04
6.50
+ 0.25
0.15
HA17904A Series
Rev.0, May 2001, page 9 of 9
Disclaimer
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor
products.
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Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: (03) 3270-2111 Fax: (03) 3270-5109
Copyright Hitachi, Ltd., 2001. All rights reserved. Printed in Japan.
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