Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.

The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas

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these changes do not constitute any alteration to the contents of the document itself.

Renesas Technology Home Page: http://www.renesas.com

Renesas Technology Corp.

Customer Support Dept.

April 1, 2003

To all our customers

Cautions

Keep safety first in your circuit designs!

1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better

and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
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Remember to give due consideration to safety when making your circuit designs, with appropriate
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(iii) prevention against any malfunction or mishap.

Notes regarding these materials

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Technology Corporation product best suited to the customer's application; they do not convey any
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contained therein.

HAT3004R

Electrical Characteristics (N channel) (Ta = 25

Item

Symbol Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown voltage V

(BR)DSS

= 10mA, V

= 0

Gate to source breakdown voltage V

(BR)GSS

100

A, V

= 0

Gate to source leak current

GSS

16V, V

= 0

Zero gate voltege drain current

DSS

= 30 V, V

= 0

Gate to source cutoff voltage

GS(off)

1.0

2.0

= 10V,

= 1mA

Static drain to source on state

DS(on)

0.050

0.065

= 3A, V

= 10V

Note4

resistance

DS(on)

0.078

0.11

= 3A, V

= 4V

Note4

Forward transfer admittance

3.5

5.5

= 3A, V

= 10V

Note4

Input capacitance

Ciss

310

= 10V

Output capacitance

Coss

220

= 0

Reverse transfer capacitance

Crss

100

f = 1MHz

Turn-on delay time

d(on)

= 4V, I

= 3A

Rise time

190

10V

Turn-off delay time

d(off)

Fall time

Bodydrain diode forward voltage

0.9

1.4

IF = 5.5A, V

= 0

Note4

Bodydrain diode reverse recovery
time

IF = 5.5A, V

= 0

diF/ dt =20A/

Note:

4. Pulse test

HAT3004R

Electrical Characteristics (P channel) (Ta = 25

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

Drain to source breakdown

voltage

(BR)DSS

= 10mA, V

= 0

Gate to source breakdown

voltage

(BR)GSS

100

A, V

= 0

Gate to source leak current

GSS

16V, V

= 0

Zero gate voltege drain
current

DSS

= 30 V, V

= 0

Gate to source cutoff voltage

GS(off)

1.0

2.5

= 10V,

= 1mA

Static drain to source on state R

DS(on)

0.12

0.16

= 2A, V

= 10V

Note5

resistance

DS(on)

0.20

0.34

= 2A, V

= 4V

Note5

Forward transfer admittance

2.5

3.5

= 2A, V

= 10V

Note5

Input capacitance

Ciss

350

= 10V

Output capacitance

Coss

230

= 0

Reverse transfer capacitance Crss

f = 1MHz

Turn-on delay time

d(on)

= 4V, I

= 2A

Rise time

110

10V

Turn-off delay time

d(off)

Fall time

Bodydrain diode forward

voltage

1.0

1.5

IF = 3.5A, V

= 0

Note5

Bodydrain diode reverse

recovery time

IF = 3.5A, V

= 0

diF/ dt =20A/

Note:

5. Pulse test

HAT3004R

Main Characteristics (N channel)

100

0.3

0.1

0.03

0.01

0.1

0.3

100

10V

10 µs

100 µs

1 ms

PW = 10 ms

8 V

6 V

4.5 V

4 V

3.5 V

3 V

V = 2.5 V

5 V

Tc = 75°C

25°C

V = 10 V
Pulse Test

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

Drain to Source Voltage V (V)

Drain Current I (A)

Typical Output Characteristics

Gate to Source Voltage V (V)

Drain Current I (A)

Typical Transfer Characteristics

Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)

Operation in
this area is
limited by R

DS(on)

Pulse Test

Note5

DC Operation (PW < 10 s)

0.5

0.4

0.3

0.2

0.1

Gate to Source Voltage V (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Pulse Test

I = 5 A

1 A

2 A

Ta = 25°C
1 shot Pulse
1 Drive Operation

HAT3004R

Main Characteristics (N channel)

0.5

0.2

0.05

0.1

0.02

0.01

0.2

0.5

0.20

0.16

0.12

0.08

0.04

120

160

0.2

0.5

0.2

0.1

25 °C

Tc = 25 °C

75 °C

V = 10 V
Pulse Test

Drain Current I (A)

Drain to Source On State Resistance

R ( )

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance |y | (S)

Forward Transfer Admittance vs.

Drain Current

Drain Current I (A)

Pulse Test

I = 5 A

1 A, 2 A, 5 A

V = 4 V

10 V

2 A

1 A

0.2

0.5

0.1

500

200

100

di/dt = 20 A/µs
V = 0, Ta = 25°C

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

BodyDrain Diode Reverse

Recovery Time

HAT3004R

Main Characteristics (N channel)

1000

200

100

0.2

0.5

0.1

500

200

100

500

Ciss

Coss

Crss

V = 0
f = 1 MHz

I = 5.5 A

V = 5 V

10 V
20 V

V = 20 V

10 V

5 V

V = 4 V, V = 10 V
PW = 3 µs, duty < 1 %

t f

d(off)

d(on)

Capacitance C (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.
Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

Gate to Source Voltage V (V)

Dynamic Input Characteristics

Drain Current I (A)

Switching Time t (ns)

Switching Characteristics

0.4

0.8

1.2

1.6

2.0

0, 5 V

V = 5 V

Source to Drain Voltage V (V)

Reverse Drain Current I (A)

Reverse Drain Current vs.

Souece to Drain Voltage

Pulse Test

HAT3004R

Main Characteristics (P channel)

0.1

100

0.1

0.01

0.3

100

0.3

0.03

10 µs

100µs

PW = 10 ms

1 ms

V = 2.5 V

10 V

5 V

4 V

3.5 V

3 V

Tc = 25 °C

75 °C

25 °C

8 V

6 V

4.5 V

Drain to Source Voltage V (V)

Drain Current I (A)

Maximum Safe Operation Area

Drain to Source Voltage V (V)

Drain Current I (A)

Typical Output Characteristics

Gate to Source Voltage V (V)

Drain Current I (A)

Typical Transfer Characteristics

Note 5 :
When using the glass epoxy board
(FR4 40x40x1.6 mm)

Operation in
this area is
limited by R

DS(on)

Pulse Test

Note 5

DC Operation (PW < 10 s)

Ta = 25 °C
1 shot Pulse
1 Drive Operation

V = 10 V
Pulse Test

0.5

0.4

0.3

0.2

0.1

0.5 A

I = 2 A

1 A

Gate to Source Voltage V (V)

Drain to Source Saturation Voltage vs.

Gate to Source Voltage

V (V)

DS(on)

Drain to Source Saturation Voltage

Pulse Test

HAT3004R

Main Characteristics (P channel)

0.2

0.5

0.1

0.02

0.05

0.2

0.5

120

160

0.5

0.4

0.3

0.2

0.1

2 A, 1 A, 0.5 A

10 V

0.1

0.2

0.5

0.2

0.5

10 20

10 V

V = 4 V

1 A, 0.5 A

I = 2 A

Tc = 25 °C

75 °C

25 °C

Drain Current I (A)

Drain to Source On State Resistance

R ( )

DS(on)

Static Drain to Source on State Resistance

vs. Drain Current

Case Temperature Tc (°C)

R ( )

DS(on)

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance |y | (S)

Forward Transfer Admittance vs.

Drain Current

Drain Current I (A)

V = 10 V
Pulse Test

Pulse Test

500

200

100

0.2

0.5

0.1

di / dt = 20 A / µs
V = 0, Ta = 25 °C

Reverse Drain Current I (A)

Reverse Recovery Time trr (ns)

BodyDrain Diode Reverse

Recovery Time

HAT3004R

Main Characteristics (P channel)

10000

3000

1000

300

100

V = 0
f = 1 MHz

500

200

100

0.2

0.5

0.1

Ciss

Coss

Crss

V = 5 V

10 V
25 V

V = 25 V

10 V

5 V

I = 3.5 A

t f

d(off)

d(on)

V = 4 V, V = 10 V
PW = 3 µs, duty < 1 %

Capacitance C (pF)

Drain to Source Voltage V (V)

Typical Capacitance vs.
Drain to Source Voltage

Gate Charge Qg (nc)

Drain to Source Voltage V (V)

Gate to Source Voltage V (V)

Dynamic Input Characteristics

Drain Current I (A)

Switching Time t (ns)

Switching Characteristics

0.4

0.8

1.2

1.6

2.0

0, 5 V

V = 5 V

Source to Drain Voltage V (V)

Reverse Drain Current I (A)

Reverse Drain Current vs.

Souece to Drain Voltage

Pulse Test

HAT3004R

10 µ

100 µ

1 m

10 m

100 m

100

1000

10000

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (2 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

D =

ch f(t) = s (t) · ch f
ch f = 166 °C/W, Ta = 25 °C

When using the glass epoxy board
(FR4 40x40x1.6 mm)

10 µ

100 µ

1 m

10 m

100 m

100

1000

10000

0.1

0.01

0.001

0.0001

D = 1

0.5

0.2

0.1

0.05

0.02

0.01

1shot pulse

Pulse Width PW (S)

Normalized Transient Thermal Impedance vs. Pulse Width (1 Drive Operation)

Normalized Transient Thermal Impedance

s (t)

D =

ch f(t) = s (t) · ch f
ch f = 125 °C/W, Ta = 25 °C

When using the glass epoxy board
(FR4 40x40x1.6 mm)

HAT3004R

Cautions

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent,

copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party's rights, including
intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi's sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor

products.

Hitachi, Ltd.

Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109

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Singapore 049318
Tel : <65>-538-6533/538-8577
Fax : <65>-538-6933/538-3877
URL : http://www.hitachi.com.sg

URL

NorthAmerica

: http://semiconductor.hitachi.com/

Europe

: http://www.hitachi-eu.com/hel/ecg

Asia

: http://sicapac.hitachi-asia.com

Japan

: http://www.hitachi.co.jp/Sicd/indx.htm

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(Taipei Branch Office)
4/F, No. 167, Tun Hwa North Road,
Hung-Kuo Building,
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Tel : <886>-(2)-2718-3666
Fax : <886>-(2)-2718-8180
Telex : 23222 HAS-TP
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Fax : <852>-(2)-730-0281
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Tel: <44> (1628) 585000
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Hitachi Europe GmbH
Electronic Components Group
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e 3

D-85622 Feldkirchen, Munich
Germany
Tel: <49> (89) 9 9180-0
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(America) Inc.
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San Jose,CA 95134
Tel: <1> (408) 433-1990
Fax: <1>(408) 433-0223

For further information write to:

Colophon 2.0

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