Regarding the change of names mentioned in the document, such as Hitachi
Electric and Hitachi XX, to Renesas Technology Corp.
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand
names are mentioned in the document, these names have in fact all been changed to Renesas
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and
corporate statement, no changes whatsoever have been made to the contents of the document, and
these changes do not constitute any alteration to the contents of the document itself.
Renesas Technology Home Page: http://www.renesas.com
Renesas Technology Corp.
Customer Support Dept.
April 1, 2003
To all our customers
Cautions
Keep safety first in your circuit designs!
1. Renesas Technology Corporation puts the maximum effort into making semiconductor products better
and more reliable, but there is always the possibility that trouble may occur with them. Trouble with
semiconductors may lead to personal injury, fire or property damage.
Remember to give due consideration to safety when making your circuit designs, with appropriate
measures such as (i) placement of substitutive, auxiliary circuits, (ii) use of nonflammable material or
(iii) prevention against any malfunction or mishap.
Notes regarding these materials
1. These materials are intended as a reference to assist our customers in the selection of the Renesas
Technology Corporation product best suited to the customer's application; they do not convey any
license under any intellectual property rights, or any other rights, belonging to Renesas Technology
Corporation or a third party.
2. Renesas Technology Corporation assumes no responsibility for any damage, or infringement of any
third-party's rights, originating in the use of any product data, diagrams, charts, programs, algorithms, or
circuit application examples contained in these materials.
3. All information contained in these materials, including product data, diagrams, charts, programs and
algorithms represents information on products at the time of publication of these materials, and are
subject to change by Renesas Technology Corporation without notice due to product improvements or
other reasons. It is therefore recommended that customers contact Renesas Technology Corporation
or an authorized Renesas Technology Corporation product distributor for the latest product information
before purchasing a product listed herein.
The information described here may contain technical inaccuracies or typographical errors.
Renesas Technology Corporation assumes no responsibility for any damage, liability, or other loss
rising from these inaccuracies or errors.
Please also pay attention to information published by Renesas Technology Corporation by various
means, including the Renesas Technology Corporation Semiconductor home page
(http://www.renesas.com).
4. When using any or all of the information contained in these materials, including product data, diagrams,
charts, programs, and algorithms, please be sure to evaluate all information as a total system before
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Corporation assumes no responsibility for any damage, liability or other loss resulting from the
information contained herein.
5. Renesas Technology Corporation semiconductors are not designed or manufactured for use in a device
or system that is used under circumstances in which human life is potentially at stake. Please contact
Renesas Technology Corporation or an authorized Renesas Technology Corporation product distributor
when considering the use of a product contained herein for any specific purposes, such as apparatus or
systems for transportation, vehicular, medical, aerospace, nuclear, or undersea repeater use.
6. The prior written approval of Renesas Technology Corporation is necessary to reprint or reproduce in
whole or in part these materials.
7. If these products or technologies are subject to the Japanese export control restrictions, they must be
exported under a license from the Japanese government and cannot be imported into a country other
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Any diversion or reexport contrary to the export control laws and regulations of Japan and/or the
country of destination is prohibited.
8. Please contact Renesas Technology Corporation for further details on these materials or the products
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Preliminary: The specifications of this device are subject to change without notice. Please contact
your nearest Hitachi's Sales Dept. regarding specifications.
HM66AEB36104/HM66AEB18204
HM66AEB9404
36-Mbit DDR II SRAM
4-word Burst
ADE-203-1368 (Z)
Preliminary
Rev. 0.0
Jan. 27, 2003
Description
The HM66AEB36104 is a 1,048,576-word by 36-bit, the HM66AEB18204 is a 2,097,152-word by 18-bit,
and the HM66AEB9404 is a 4,194,304-word by 9-bit synchronous double data rate static RAM fabricated
with advanced CMOS technology using full CMOS six-transistor memory cell. It integrates unique
synchronous peripheral circuitry and a burst counter. All input registers controlled by an input clock pair
(K and
K) and are latched on the positive edge of K and K. These products are suitable for applications
which require synchronous operation, high speed, low voltage, high density and wide bit configuration.
These products are packaged in 165-pin plastic FBGA package.
HM66AEB36104/18204/9404
Rev.0.0, Jan. 2003, page 2 of 30
Features
1.8 V
0.1 V power supply for core (V
DD
)
1.4 V to V
DD
power supply for I/O (V
DDQ
)
DLL circuitry for wide output data valid window and future frequency scaling
Pipelined double data rate operation
Common data input/output bus
Four-tick burst for reduced address frequency
Two input clocks (K and
K) for precise DDR timing at clock rising edges only
Two output clocks (C and
C) for precise flight time and clock skew matching-clock and data delivered
together to receiving device
Internally self-timed write control
Clock-stop capability with
s restart
User programmable impedance output
Fast clock cycle time: 3.0 ns (333 MHz)/3.3 ns (300 MHz)/4.0 ns (250 MHz)/
5.0 ns (200 MHz)/6.0 ns (167 MHz)
Simple control logic for easy depth expansion
JTAG boundary scan
Ordering Information
Type No.
Organization
Cycle time
Clock frequency Package
HM66AEB36104BP-30
HM66AEB36104BP-33
HM66AEB36104BP-40
HM66AEB36104BP-50
HM66AEB36104BP-60
1-M word
36-bit
3.0 ns
3.3 ns
4.0 ns
5.0 ns
6.0 ns
333 MHz
300 MHz
250 MHz
200 MHz
167 MHz
Plastic FBGA 165-pin
(BP-165A)
HM66AEB18204BP-30
HM66AEB18204BP-33
HM66AEB18204BP-40
HM66AEB18204BP-50
HM66AEB18204BP-60
2-M word
18-bit
3.0 ns
3.3 ns
4.0 ns
5.0 ns
6.0 ns
333 MHz
300 MHz
250 MHz
200 MHz
167 MHz
HM66AEB9404BP-30
HM66AEB9404BP-33
HM66AEB9404BP-40
HM66AEB9404BP-50
HM66AEB9404BP-60
4-M word
9-bit
3.0 ns
3.3 ns
4.0 ns
5.0 ns
6.0 ns
333 MHz
300 MHz
250 MHz
200 MHz
167 MHz
HM66AEB36104/18204/9404
Rev.0.0, Jan. 2003, page 3 of 30
Pin Arrangement (HM66AEB36104) 165PIN-BGA
1 2 3 4 5 6 7 8 9 10
11
A
CQ
V
SS
SA R/
W BW2
K BW1
LD
SA NC CQ
B NC
DQ27
DQ18
SA
BW3
K
BW0
SA NC NC DQ8
C NC NC
DQ28
V
SS
SA SA0
SA1 V
SS
NC
DQ17
DQ7
D NC
DQ29
DQ19
V
SS
V
SS
V
SS
V
SS
V
SS
NC NC
DQ16
E NC NC
DQ20
V
DDQ
V
SS
V
SS
V
SS
V
DDQ
NC DQ15
DQ6
F NC
DQ30
DQ21
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC NC DQ5
G NC
DQ31
DQ22
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC NC DQ14
H
DOFF
V
REF
V
DDQ
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
V
DDQ
V
REF
ZQ
J NC
NC
DQ32
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC DQ13
DQ4
K NC NC
DQ23
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC DQ12
DQ3
L NC
DQ33
DQ24
V
DDQ
V
SS
V
SS
V
SS
V
DDQ
NC NC DQ2
M NC NC
DQ34
V
SS
V
SS
V
SS
V
SS
V
SS
NC
DQ11
DQ1
N NC
DQ35
DQ25
V
SS
SA SA SA V
SS
NC NC
DQ10
P NC NC
DQ26
SA SA C SA SA NC
DQ9
DQ0
R TDO
TCK SA SA SA
C
SA SA SA TMS
TDI
(Top view)
Pin Arrangement (HM66AEB18204) 165PIN-BGA
1 2 3 4 5 6 7 8 9 10
11
A
CQ
V
SS
SA R/
W BW1
K
NC
LD
SA SA CQ
B NC
DQ9
NC SA NC K
BW0
SA NC NC DQ8
C NC NC NC V
SS
SA SA0
SA1 V
SS
NC DQ7 NC
D NC NC
DQ10
V
SS
V
SS
V
SS
V
SS
V
SS
NC NC NC
E NC NC
DQ11
V
DDQ
V
SS
V
SS
V
SS
V
DDQ
NC NC DQ6
F NC
DQ12
NC
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC NC DQ5
G NC NC
DQ13
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC NC NC
H
DOFF
V
REF
V
DDQ
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
V
DDQ
V
REF
ZQ
J NC NC
NC
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC DQ4 NC
K NC NC
DQ14
V
DDQ
V
DD
V
SS
V
DD
V
DDQ
NC NC DQ3
L NC
DQ15
NC
V
DDQ
V
SS
V
SS
V
SS
V
DDQ
NC NC DQ2
M NC NC NC V
SS
V
SS
V
SS
V
SS
V
SS
NC DQ1 NC
N NC NC
DQ16
V
SS
SA SA SA V
SS
NC NC NC
P NC NC
DQ17
SA SA C SA SA NC NC
DQ0
R TDO
TCK SA SA SA
C
SA SA SA TMS
TDI
(Top view)
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