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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
3
2
4
RF OUT
RF OUT
RF IN
GND
GND
MARKING - C4
RF2044
GENERAL PURPOSE AMPLIFIER
Broadband, Low-Noise Gain Blocks
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Final PA for Low-Power Applications
High Reliability Applications
Broadband Test Equipment
The RF2044 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50
input and output
impedances and requires only two external DC biasing
elements to operate as specified. With a goal of
enhanced reliability, the extremely small Micro-X ceramic
package offers significantly lower thermal resistance than
similar size plastic packages.
DC to >6000MHz Operation
Internally matched Input and Output
20dB Small Signal Gain
4.0dB Noise Figure
50mW Linear Output Power
Single Positive Power Supply
RF2044
General Purpose Amplifier
RF204X PCBA
Fully Assembled Evaluation Board
4
Rev A9 010110
0.070
sq.
45
+ 1
0.055
+ 0.005
0.020
+ 0.002
0.040
+ 0.002
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
0.200 sq.
Typ
Package Style: Micro-X Ceramic
4-8
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Absolute Maximum Ratings
Parameter
Rating
Unit
Input RF Power
+13
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-60 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 C, I
CC
=65mA
Frequency Range
DC to >6000
MHz
3dB Bandwidth
3
GHz
Gain
20.4
dB
Freq= 100MHz
19.3
20.3
21.3
dB
Freq= 850MHz
16.5
19.0
dB
Freq= 2000MHz
17.5
dB
Freq= 3000MHz
16.6
Freq= 4000MHz
14.3
Freq= 6000MHz
Gain Flatness
0.7
dB
100MHz to 2000MHz
Noise Figure
4.1
dB
Freq= 1000MHz
Input VSWR
<1.4:1
In a 50
system, DC to 5000MHz
<1.7:1
In a 50
system, 5000MHz to 6000MHz
Output VSWR
<1.2:1
In a 50
system, DC to 3000MHz
<1.8:1
In a 50
system, 3000MHz to 6000MHz
Output IP
3
+30.0
+33.5
dBm
Freq= 1000MHz
Output P
1dB
+18.5
dBm
Freq= 1000MHz
Reverse Isolation
22.3
dB
Freq= 1000MHz
Thermal
I
CC
=65mA, P
DISS
= 300mW
Theta
JC
188
C/W
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
143
C
T
AMB
= +85C
Mean Time Between Failures
1.3x10
3
years
T
AMB
= +85C
3.1x10
5
years
T
AMB
= +25C
1.6x10
9
years
T
AMB
= -40C
Power Supply
With 22
bias resistor
Device Operating Voltage
4.3
4.8
5.3
V
At pin 3 with I
CC
=65mA
Operating Current
60
65
80
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Application Schematic
Pin
Function
Description
Interface Schematic
1
RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
2
GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
3
RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
CC
. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 90mA over the planned oper-
ating temperature. This means that a resistor between the supply and
this pin is always required, even if a supply near 4.9V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
4
GND
Same as pin 2.
R
V
SUPPL Y
V
DEVI CE
(
)
I
CC
-------------------------------------------------------
=
RF OUT
RF IN
RF OUT
22 pF
R
BIAS
10 nF
22 pF
47 nH
22 pF
RF IN
V
CC
1
3
2
4
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Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Evaluation Board Layout
Board Size 1.195" x 1.000"
C2
100 pF
C1
100 pF
50
strip
50
strip
RF OUT
J2
RF IN
J1
P1-1
NC
P1
VCC
GND
1
2
3
L1
100 nH
R1
22
VCC
P1-1
C3
100 pF
C4
1
F
Drawing 204X400-
1
3
2
4
4-11
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Gain versus Frequency Across Temperature
I
CC
= 65 mA
13.00
14.00
15.00
16.00
17.00
18.00
19.00
20.00
21.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
Frequency (GHz)
Gain
(dB)
-40 C
26 C
85 C
Output P1dB versus Frequency Across Temperature
I
CC
= 65 mA
12.00
13.00
14.00
15.00
16.00
17.00
18.00
19.00
20.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
Frequency (GHz)
Output
Power
(
dBm)
- 40 C
26 C
85 C
Output IP3 versus Frequency Across Temperature
I
CC
= 65 mA
20.00
22.00
24.00
26.00
28.00
30.00
32.00
34.00
36.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
Frequency (GHz)
3rd
O
rder
Intercept
Power
(
dBm)
-40 C
26 C
85 C
Noise Figure versus Frequency Across Temperature
I
CC
= 65 mA
2.00
3.00
4.00
5.00
6.00
7.00
8.00
9.00
10.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
Frequency (GHz)
Noise
Figure
(
dB)
-40 C
26 C
85 C
Input VSWR versus Frequency Across Temperature
I
CC
= 65 mA
1.00
1.50
2.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
Frequency (GHz)
VSWR
-40 C
26 C
85 C
Output VSWR versus Frequency Across Temperature
I
CC
= 65 mA
1.00
1.50
2.00
0.10
0.69
1.28
1.87
2.46
3.05
3.64
4.23
4.82
5.41
6.00
Frequency (GHz)
VSWR
-40 C
26 C
85 C
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