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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VCC1
GND
GND
VCC2
RF IN
GND
GND
PC
GND
GND
GND
RF OUT
RF OUT
GND
GND
GND
BIAS
RF2104
MEDIUM POWER AMPLIFIER
900MHz ISM Band Applications
400MHz Industrial Radios
Driver for Higher Power Applications
Portable Battery-Powered Equipment
Commercial and Consumer Systems
Base Station Equipment
The RF2104 is a medium power amplifier IC. The device
is manufactured on a low cost Silicon process, and has
been designed for use as the final RF amplifier in UHF
radio transmitters operating between 400MHz and
1000 MHz. It may also be used as a driver amplifier in
higher power applications. The device is packaged in a
plastic quad-batwing 16-lead package, and is self-con-
tained with the exception of the output matching network,
power supply feed line, and bypass capacitors. It pro-
duces an output power level of up to 500mW (CW) at
3.6V. The device can be used in 3 cell battery applica-
tions. The maximum CW output at 3.6V is +27dBm. The
unit has a total gain of 26dB, depending upon the output
matching network.
400MHz to 1000MHz Operation
Up to 500mW CW Output Power
26dB Small Signal Gain
40dB Gain Control Range
Single 2.7V to 3.6V Supply
40% Efficiency
RF2104
Medium Power Amplifier
RF2104 PCBA-L
Fully Assembled Evaluation Board (830MHz)
RF2104 PCBA-H Fully Assembled Evaluation Board (915MHz)
2
Rev B4 010507
0.068
0.064
0.008
0.004
-A-
0.020
0.014
0.034 REF
0.068
0.053
0.244
0.229
0.009
0.007
0.034
0.016
8 MAX
0 MIN
0.393
0.386
0.020
REF
0.157
0.150
Package Style: CJ2BAT0
2-12
RF2104
Rev B4 010507
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +6.0
V
DC
Gain Control Voltage (V
PC
)
-0.5 to +3.0
V
DC Supply Current
500
mA
Input RF Power
+12
dBm
Output Load VSWR
20:1
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25C, V
CC
= 3.6V, V
PC
=2.5V,
Z
LOAD
= 10
, P
IN
=+6dBm, Freq=850MHz
Frequency Range
400 to 1000
MHz
Bandwidth
150
MHz
With fixed matching network
Maximum Output Power
+27
dBm
V
CC
= 3.6V, P
IN
=+6dBm
Maximum Output Power
+27
dBm
V
CC
= 3.0V, P
IN
=+6dBm
Output Third Order Intercept
+36
dBm
V
CC
= 3.6V
Power Added Efficiency
40
%
V
CC
= 3.6V, P
OUT
= +27dBm, P
IN
=+6dBm
Small Signal Gain
24
25
28
dB
V
CC
= 3.6V, V
PC
= +2.5V, Freq= 850MHz
Gain Control Range
35
40
dB
V
PC
=0V to 2.5V
Second Harmonic
-50
dBc
Without external second harmonic trap
Third Harmonic
-50
dBc
Noise Figure
5.5
7.0
dB
Input Impedance
50
Input Return Loss
-20
-15
dB
With external matching network; see appli-
cation schematic
Input Return Loss
-10
dB
Without external matching network
Output Impedance
50
Not matched for maximum output power
Output Return Loss
-13
dB
Without external matching network
Load Impedance
5+ j0
Load Impedance for Optimal Power Match
Power Supply
Power Supply Voltage
2.7 to 3.6
V
Power Supply Idle Current
250
300
mA
V
PC
= 2.5V
Total "OFF" Current Drain
1
10
A
V
PC
<0.25V
DC
; No RF input power
Total "OFF" Current Drain
4
mA
V
PC
<0.25V
DC
; P
IN
=+6dBm
Current into PC pin
1
mA
V
PC
= 2.5V
Current into PC pin
0
A
V
PC
=0V
Turn-on Time
<100
ns
V
PC
=0V to V
PC
=+2.5V
DC
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
2-13
RF2104
Rev B4 010507
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Pin
Function
Description
Interface Schematic
1
VCC1
Power supply for the bias circuits.This pin draws current proportional to
V
PC
. When V
PC
is 2.5V the maximum current is about 30mA. When
V
PC
goes down to 0V the current also goes down to 0mA.
2
GND
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane. A via hole under each
ground pin to the ground plane is recommended.
3
GND
Same as pin 2.
4
VCC2
Power supply for the driver stage and interstage matching. An external
decoupling capacitor is required. The electrical length between the pin
and this capacitor affects the gain. See the application schematic for
recommended line length for optimum gain. For operation at frequen-
cies below 600MHz a series inductor is required.
5
RF IN
50
RF input. DC voltages are present at this pin, and an external
blocking capacitor is required when connecting this pin to a DC path to
ground. For optimum impedance matching, a shunt inductor to ground
is recommended; see the application schematic for details.
See pin 4 schematic.
6
GND
Same as pin 2.
7
GND
Same as pin 2.
8
PC
Power control pin. A DC voltage between 0V and 3.0V can be applied
to control the gain. When no gain control is required this pin should be
connected to a fixed voltage between 2.5V and 3.0V. This pin draws
some current proportional to V
PC
. When V
PC
is 2.5V the maximum cur-
rent into this pin is about 1mA.
See pin 1 schematic.
9
GND
Same as pin 2.
10
GND
Same as pin 2.
11
GND
Same as pin 2.
12
RF OUT
RF output. The power supply for the output stage also needs to be sup-
plied to this pin through the external matching circuit. The load imped-
ance to this pin should be 5+ j0
for maximum output power.
13
RF OUT
Same as pin 12.
See pin 12 schematic.
14
GND
Same as pin 2.
15
GND
Same as pin 2.
16
GND
Same as pin 2.
40
PC
VCC1
To Bias
Stages
RF IN
VCC2
From Bias
Stages
RF OUT
From Bias
Stages
2-14
RF2104
Rev B4 010507
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Application Schematic - 915MHz
Application Schematic - 830MHz
V
CC
100 pF
7.5 pF
330 pF
10
F
100 pF
100 pF
100 pF
6.8 nH
3.3 nH
7.5 pF
5.1 pF
100 pF
8.2 nH
RF OUT
RF IN
5.6 pF
BIAS
W=0.028"
L=0.400"
33 pF
PC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
100 pF
11 pF
330 pF
100 pF
100 pF
6.8 nH
3.3 nH
7.5 pF
5.6 pF
100 pF
10 nH
RF OUT
RF IN
5.6 pF
BIAS
33 pF
PC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
CC
330 pF
10
F
100 pF
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RF2104
Rev B4 010507
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Application Schematic - 420MHz
100 pF
150 pF
330 pF
100 pF
100 pF
5.6 nH
6.8 nH
68 pF
15 pF
100 pF
33 nH
RF OUT
RF IN
30 pF
BIAS
33 pF
PC
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
V
CC
330 pF
10
F
100 pF
1.8 nH
1.3 pF
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