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2
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AMPLI
F
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Preliminary
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
Bias
Circuits
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
VREG
VCC1
LTUNE
Q1C
GND
RFIN
NC
VPD
NC
NC
RFOUT
RFOUT
RFOUT
NC
NC
NC
RF2117
3.6V Analog Handsets
Analog Communication Systems
400MHz Industrial Radios
Portable Battery Powered Equipment
The RF2117 is a high power amplifier IC. The device is
manufactured on an advanced Gallium Arsenide Hetero-
junction Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in analog cellu-
lar phone transmitters between 400 MHz and 500 MHz or
ISM applications operating at 433MHz. The device is
packaged in a low cost 16-lead plastic package with a
metal backside. The device is self-contained with the
exception of the output matching network and power sup-
ply feed line.
Single 3V to 5.5V Supply
Up to 2W CW Output Power
33dB Small Signal Gain
>50% Efficiency
400MHz to 500MHz Operation
RF2117
High Efficiency 400MHz Amplifier
RF2117 PCBA
Fully Assembled Evaluation Board
Rev A0 991201
.065
.055
.393
.386
.244
.230
.035
.016
8MAX
5MIN
.0098
.0075
.158
.152
.021
.015
.050
1
.004
.000
EXPOSED
HEATSINK
.287
.271
.087
.071
Package Weight
typically 0.22 grams
!"
Preliminary
2-48
RF2117
Rev A0 991201
2
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (V
CC
)
-0.5 to +6.0
V
DC
Power Down Voltage (V
PD
)
-0.5 to +3.0
V
DC Supply Current
1300
mA
Input RF Power
+10
dBm
Output Load
7:1
Operating Case Temperature
-40 to +100
C
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-55 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25 C, V
CC
=3.6V, V
PD
=2.2V,
Z
LOAD
=2.7
, P
IN
=4dBm, Freq=450MHz
Frequency Range
400 to 500
MHz
Maximum CW Output Power
+33
dBm
+32.5
dBm
V
CC
=3.2 to 4.5V Tamb=-25 to +85 C
+31.5
dBm
V
CC
=3.0 to 3.2V and 4.5 to 5.5V
Total CW Efficiency
52
55
%
Vcc=3.0V Pout=+32.5 dBm
45
%
Vcc=3.6V Pout=+32.5 dBm
Small-signal Gain
33
dB
Harmonics
-30
-40
dBc
Vcc=3.0 to 5.5V
Tamb= -25 to +85 C
All Other Spurious
-70
dBc
Load VSWR
6:1 all phase angles, Zs=50 ,
Vcc=3.0V to 5.5V, Tamb= -30 to +85 C
Input VSWR
<2:1
Input Power
+2
+4
+6
dBm
Input Impedance
50
Noise Power in Rx Band
-80dBm
dBm
Pout=+32.5 dBm, Freq.= 410 to 485 MHz,
Tamb= -30 to +85C VSWR
6:1 all phase
angles.
Intermodulation Conversion at
TX Freq. - 10MHz
12
dB
Pout=+15dBm to +32.5 dBm
Power Down Isolation
45
dB
VPD grounded through 1k
resistor
Pin=+6dBm
Power Control
Control Voltage VPD
0
2.4
V
Control Current
6
mA
Gain Control
35
dB
Power Supply
Power Supply Voltage
3.0
3.6
5.3
V
Power Supply Current
1100
mA
DC Current at POUT,MAX
Regulated Voltage VREG
2.7
2.8
2.9
V
Current from VREG
12
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Preliminary
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RF2117
Rev A0 991201
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Pin
Function
Description
Interface Schematic
1
VREG
Regulated Supply for bias circuit. This pin should be connected to the
regulated supply with a ferrite of 240 ohms and should have a UHF
decoupling capacitor (100pF) to ground at the supply end of the ferrite.
An additional capacitor of 1nF can be added with the 100 pF but it's
placement is not as critical.
2
VCC1
Positive supply for the active bias circuits. Bypassing should be accom-
plished with a single UHF decoupling capacitor, placed close to the Pin.
Additional bypassing of 1nF is also recommended, but proximity to the
package is not as critical.
3
LTUNE
The Inter-stage matching point of the amplifiers. Matching should be
performed with a small value inductor connected from the pin to
ground.
4
Q1C
Positive Supply to the first stage collector. The supply should be fed
through a parallel LC network, resonant at the centre of the band of
interest. A UHF decoupling capacitor should be placed from the supply
end of the LC to ground. A 1nF capacitor can also be used but it's
placement it not as critical.
5
GND
Ground Contact for the driver stage. Keep traces physically short and
connect immediately to the ground plane for best performance. It is
important for stability that this pin has it's own via to the groundplane, to
minimize any common inductance.
6
RF IN
Amplifier RF input. This is a 50
RF input port to the amplifier. It does
not contain internal DC blocking and therefore should be externally DC
blocked before connecting to any device which has DC present or
which contains a DC path to ground. A series UHF capacitor is recom-
mended for the DC blocking.
7
NC
Not internally connected.
8
VPD
Power Down control. When this pin is "low" all circuits are off. A low is
typically less than 0.5V at room temperature. This pin affords a mea-
sure of power control, however this response is not linear across much
of the range. It is recommended that the pin be used in closed loop
power control systems if it is to be used across a range of voltages and
temperatures for power control.
9
NC
Not internally connected.
10
NC
Not internally connected.
11
NC
Not internally connected.
12
RF OUT
Amplifier RF output. This is an unmatched collector output of the final
amplifier transistor. It is internally connected to pins 12, 13, and 14 to
provide low series inductance and flexibility in output matching. Bias for
the final power amplifier output transistor must also be provided
through two of these three pins. Typically, these pins are externally con-
nected very close to the package and used as the RF output with a
matching network that presents the optimum load impedance to the PA
for maximum power and efficiency, as well as providing DC blocking at
the output. An additional network of a bias inductor (or
/4 line) pro-
vides DC bias and helps to protect the output from high voltage swings
due to severe load mismatches.
13
RF OUT
Amplifier RF output, same as pin 12
14
RF OUT
Amplifier RF output, same as pin 12. Do not feed the supply to this pin
alone. If this pin is used as the supply pin it must be connected in paral-
lel with pin 12 and/or 13.
15
NC
Not internally connected.
16
NC
Not internally connected.
Pkg
Base
GND
This contact is the main ground contact for the entire device. Care
should be taken to ensure that this contact is well soldered in order to
prevent performance from being degraded from that indicated in the
specifications.
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