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Preliminary
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
GND
LMATCH
GND
VCC
GND1
RF IN
GND
BIAS1
BIAS2
NC
RF OUT
RF OUT
RF OUT
NC
NC
VPC
BIAS
CIRCUITS
PACKAGE BASE
GND
RF2119
HIGH EFFICIENCY 2V POWER AMPLIFIER
Two-Way Pagers
915MHz ISM Band Equipment
Spread-Spectrum Systems
3V AMPS/ETACS Cellular Handsets
CDPD Portable Data Cards
Personal Digital Cellular
The RF2119 is a high-power, high-efficiency amplifier IC
targeting 2V to 4 V handheld systems. The device is man-
ufactured on an advanced Gallium Arsenide Heterojunc-
tion Bipolar Transistor (HBT) process, and has been
designed for use as the final RF amplifier in hand-held
digital cellular equipment, spread spectrum systems, and
other applications in the 800MHz to 960MHz band. The
device is well suited for either CW or pulsed applications.
At 3 V, the RF2119 can deliver 29.5dBm of linear output
power. The device is self-contained with 50
input and
the output can be easily matched to obtain optimum
power, efficiency, and linearity characteristics. The pack-
age is a PSSOP-16 with backside ground.
Single 2V to 5V Supply
30dBm Output Power at 2.5V
30dB Small Signal Gain
53% Efficiency
On-board Power Down Mode
800MHz to 960MHz Operation
RF2119
High Efficiency 2V Power Amplifier
RF2119 PCBA
Fully Assembled Evaluation Board
2
Rev A8 010720
0.05 0.05 3
-A-
0.25 0.05
0.635
1.40 0.10
Exposed
Heat Sink
3
2.70 0.10
1.70 0.10
3.90
0.10
4.90 0.10
6.00 0.20
0.60 0.15
8 MAX
0 MIN
0.24
0.20
Package Style: PSSOP-16
Preliminary
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RF2119
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
V
DC
Supply Voltage
+5.2
V
DC
Control Voltage (V
PC
)
+3.0
V
DC
Input RF Power
+12
dBm
CW Dissipated Power
1.8
W
Peak Dissipated Power
2.5
W
Operating Case Temperature
-30 to +110
C
Storage Temperature
-30 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25C, V
CC
= 2.5V, V
PC
= 2.2V,
Freq= 902MHz, P
IN
=2dBm
Usable Frequency Range
800
902
960
MHz
Small Signal Gain
30
dB
Maximum CW Output Power
29.5
30.5
31.5
dBm
Supply Voltage=2.5V
31
32
34
dBm
Supply Voltage=3.0V
32.5
33.5
35
dBm
Supply Voltage=3.5V
29.3
dBm
Supply Voltage=2.0V
Maximum Pulsed Output Power
30
31
32
Supply Voltage=2.5V, 12.5% duty cycle
31.5
33
34.5
Supply Voltage=3.0V, 12.5% duty cycle
33
34
35.5
Supply Voltage=3.5V, 12.5% duty cycle
Total CW Efficiency
45
51
%
Pulsed Efficiency
47
53
%
12.5% duty cycle
Input Power
0
+2
+6
dBm
OFF Isolation
-25
dBm
V
PC
= 0V, Input Power= +6dBm
Second Harmonic Suppression
45
dBc
Third Harmonic Suppression
>60
dBc
Input VSWR
<2:1
With a 50
source impedance
Output Load VSWR
10:1
No damage.
AMPS Application #1
T = 25C, V
CC
= 3.4V, V
PC
= 1.8V,
Freq= 836MHz, P
IN
=+3dBm
Frequency
824 to 849
MHz
Maximum Output Power
30.5
dBm
Efficiency @ Maximum Output
Power
50
%
Idle Current
195
250
mA
Second Harmonic Suppression
-45
dBc
Current Total
760
mA
AMPS Application #2
T = 25C, V
CC
= 3.5V, V
PC
= 1.6V,
Freq= 836MHz, P
IN
= +8dBm (see AMPS
application schematic)
Frequency
824 to 849
MHz
Maximum Output Power
29.5
30.5
dBm
V
CC
= 2.7V
30.8
31.5
dBm
V
CC
= 3.0V
32
33
dBm
V
CC
= 3.5V
Efficiency @ Maximum Output
Power
50
55
%
Idle Current
120
mA
I
PC
@ Maximum Output Power
20
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Refer to "Handling of PSOP and PSSOP Products"
on page 16-15 for special handling information.
Preliminary
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RF2119
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Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Power Down Control
Turn On/Off Time
100
ns
V
PC
"OFF" Voltage
0.2
0.5
V
V
PC
"ON" Voltage
2.0
2.2
2.8
V
I
PC
"ON" Current
30
mA
V
PC
=2.2V
I
PC
"OFF" Current
10
A
Standby, V
PC
=0.5V
Power Supply
Voltage
2.5
V
Specifications
Voltage
2.0
5.0
V
Operating Limits
Current Total
700
900
1200
mA
V
CC
= 2.5V, V
PC
= 2.2V,
P
IN
=+3dBm, T =25 C
Preliminary
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Pin
Function
Description
Interface Schematic
1
GND
Ground externally.
2
LMATCH
Interstage tuning. This pin is internally DC blocked and will connect to a
shunt inductor or microstrip line used for interstage tuning. Length from
pin to via should be approximately 60mils for 915MHz and 75mils for
902MHz and 120mils for 836MHz. The lumped element equivalent is
1.2nH to 2.0nH to ground, depending on frequency band of interest.
3
GND
Ground externally.
4
VCC1
Power supply for stage 1. V
CC
should be fed through a 3.9nH inductor
with a decoupling capacitor on the V
CC
side.
5
GND1
Ground for stage 1. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
6
RF IN
RF input. An external DC blocking capacitor is required if this port is
connected to a DC path to ground or a DC voltage.
7
GND
Ground externally.
8
BIAS1
Ground return for the first stage bias. This pin should be connected to a
33nH inductor to ground.
9
VPC
Power control voltage. For maximum power, this voltage should be at
least 2.2V. To turn off, this voltage should be less than 0.6V. This pin
should be bypassed as close to the pin as practical.
10
NC
No connection.
11
NC
No connection.
12
RF OUT
RF output and power supply for the output stage. The bias for the out-
put stage is provided through this pin and pin 13. An external matching
network is required to provide the optimum load impedance; see the
application schematics for details.
13
RF OUT
Same as pin 12.
14
RF OUT
Same as pin 12.
15
NC
No connection.
16
BIAS2
Ground return for the second stage bias. This pin should be connected
to a 33nH inductor to ground.
Pkg
Base
GND
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul-
tiple vias. The pad should have a short thermal path to the ground
plane.
Preliminary
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RF2119
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Application Schematic
902MHz to 928MHz (V
CC
=2.5V)
AMPS Application Schematic
824MHz to 849MHz (V
CC
=3.5V)
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
33 pF
RF IN
V
CC
12pF
5.6 pF
RF OUT
33 pF
PACKAGE BASE
BIAS
CIRCUITS
33 nH
33 nH
3.9 nH
33 pF
1 nF
3.3
F
33 pF
VPC
60 mils
22 nH
22 nH
1.8 nH
V
CC
33 pF
1
2
3
4
5
6
7
8
16
15
14
13
12
11
10
9
2 pF
RF IN
V
CC
10 pF
6 pF
RF OUT
33 pF
PACKAGE BASE
BIAS
CIRCUITS
33 nH
33 nH
15 nH
33 pF
1 nF
3.3
F
33 pF
VPC
120 mils
22 nH
22 nH
2.2 nH
V
CC
33 pF
2 pF
12 nH
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