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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
RF IN
RF IN
PC
VCC
RF OUT
RF OUT
RF OUT
RF OUT
BIAS
CIRCUIT
PACKAGE BASE
GND
RF2126
HIGH POWER LINEAR AMPLIFIER
2.5GHz ISM Band Applications
Digital Communication Systems
PCS Communication Systems
Commercial and Consumer Systems
Portable Battery-Powered Equipment
The RF2126 is a high-power, high-efficiency, linear ampli-
fier IC. The device is manufactured on an advanced Gal-
lium Arsenide Heterojunction Bipolar Transistor (HBT)
process and has been designed for use as the final RF
amplifier in 2.45 GHz ISM applications such as WLAN
and POS terminals. The part will also function as the final
stage in digital PCS phone transmitters requiring linear
amplification
operating
between
1800MHz
and
2500 MHz. The device is packaged in an 8-lead plastic
package with a backside ground. The device is self-con-
tained with the exception of the output matching network
and power supply feed line. It produces a typical output
power level of 1W.
Single 3V to 6.5V Supply
1.3W Output Power
12dB Gain
45% Efficiency
Power Down Mode
1800MHz to 2500MHz Operation
RF2126
High Power Linear Amplifier
RF2126 PCBA
Fully Assembled Evaluation Board
2
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3.90
0.10
6.00
0.20
4.90
0.10
0.43
0.05
1.27
1.40
0.10
0.05
0.05
-A-
Exposed
Heat Sink
2.70
0.10
0.22
0.03
0.60
0.15
8 MAX
0 MIN
1.70
0.10
Dimensions in mm.
NOTES:
1. Shaded lead is pin 1.
2. Lead coplanarity - 0.10 with respect to datum "A".
Package Style: SOIC-8 Slug
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (V
CC
)
-0.5 to +7.5
V
DC
Power Control Voltage (V
PC
)
-0.5 to +5V
V
DC Supply Current
450
mA
Input RF Power
+20
dBm
Output Load VSWR
20:1
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +100
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25 C, V
CC
=6.0V, V
PC
= 3.0V,
Z
LOAD
= 12
, P
in
= 0dBm, Freq=2450MHz,
Idle current=180mA
Frequency Range
1800
2500
MHz
Maximum Output Power
+27.0
dBm
V
CC
= 3.6V, P
IN
= +19dBm
Maximum Output Power
+29
dBm
V
CC
= 4.8V, P
IN
= +19dBm
Maximum Output Power
+30.0
+31.0
dBm
V
CC
= 6.0V, P
IN
= +19dBm
Total Power Added Efficiency
45
%
Maximum output, V
CC
= 3.6V
Total Power Added Efficiency
45
%
Maximum output, V
CC
= 4.8V
Total Power Added Efficiency
45
%
Maximum output, V
CC
= 6.0V
Small-signal Gain
12
dB
Second Harmonic
-55
dBc
See Application Schematic, P
IN
= +17dBm
Third Harmonic
-60
dBc
Input VSWR
1.5:1
With external matching network; see appli-
cation schematic
Two-tone Specification
Average Two-Tone Power
+27
dBm
PEP- 3dB
IM
3
-24
-25
dBc
P
OUT
=+24dBm for each tone
IM
5
-35
dBc
P
OUT
=+24dBm for each tone
IM
7
-55
dBc
P
OUT
=+24dBm for each tone
Power Control
V
PC
1.5
3.0
3.5
V
To obtain 180mA idle current
Power Control "OFF"
0.2
0.5
V
Threshold voltage at device input
Power Supply
Power Supply Voltage
3.0
6.5
V
Supply Current
270
350
410
mA
P
OUT
= +30dBm, V
CC
= 6.0V
Power Down Current
0.5
10
A
V
PC
= 0.2V
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
Refer to "Handling of PSOP and PSSOP Products"
on page 16-15 for special handling information.
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Pin
Function
Description
Interface Schematic
1
RF IN
RF input. This input is DC coupled, so an external blocking capacitor is
required if this pin is connected to a DC path. An optimum match to
50
is obtained by providing an external series capacitor of 1.6pF and
then a shunt capacitor of 2.0pF; see the Application Schematic. Those
values are typical for 2450MHz; other values may be required for other
frequencies.
2
RF IN
Same as pin 1.
3
PC
Power control pin. For obtaining maximum performance the voltage on
this pin can be used to set correct bias level. In a typical application this
is implemented by a feedback loop. The feedback can be based on the
actual supply current of the device, i.e. maintaining a fixed current level,
or it can be based on the RF output power level to maintain a fixed RF
power level (Automatic Level Control loop). A voltage of 0.5V or lower
brings the part into power down state.
4
VCC
Power supply pin for the bias circuits. External low frequency bypass
capacitors should be connected if no other low frequency decoupling is
nearby.
5
RF OUT
RF output and bias for the output stage. The power supply for the out-
put transistor needs to be supplied to this pin. This can be done
through a quarter-wavelength microstrip line that is RF grounded at the
other end, or through an RF inductor that supports the required DC cur-
rents. Optimum load impedance is achieved by providing a shunt
capacitor of 1.8pF and a series capacitor of 3.3pF; see the Application
Schematic. Those values are typical for 2450MHz; other values may be
required for other frequencies. Since there are several output pins
available, which are internally connected, one pin can be used for con-
necting the bias, another for connecting a (third) harmonic trap filter,
and the other pins for the RF output.
6
RF OUT
Same as pin 5.
7
RF OUT
Same as pin 5.
8
RF OUT
Same as pin 5.
Pkg
Base
GND
Ground connection. The backside of the package should be connected
to the ground plane through a short path, i.e., vias under the device
may be required.
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Application Schematic
2450MHz Operation
Evaluation Board Schematic
2450 MHz Operation
(Download Bill of Materials from www.rfmd.com.)
1
2
3
4
8
7
6
5
BIAS
CIRCUIT
PACKAGE BASE
4.7 nH
1.8 pF
1000 pF
3.3 pF
33 pF
1000 pF
2.0 pF
RF IN
RF OUT
1.6 pF
V
CC
V
PD
1
2
3
4
8
7
6
5
BIAS
CIRCUIT
PACKAGE BASE
4.7 nH
L1
1.8 pF
C3
1000 pF
C6
3.3 pF
C4
33 pF
C5
1000 pF
C7
2.0 pF
C1
1.6 pF
C2
V
CC
V
PC
P1-1
P1-3
P1
VPC
GND
VCC
1
2
3
1 uF
C8
RF IN
J1
50
strip
RF OUT
J2
50
strip
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Evaluation Board Layout
1.5" x 1.0"
Board Thickness 0.031", Board Material FR-4
PDF 
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