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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
8
7
6
5
GND
GND
RF IN
GND
VDD1
VDD2
RF OUT
GND
RF2301
HIGH ISOLATION BUFFER AMPLIFIER
Local Oscillator Buffer Amplifiers
FDD and TDD Communication Systems
Commercial and Consumer Systems
Portable Battery-Powered Equipment
Wireless LAN
ISM Band Applications
The RF2301 is a high reverse isolation buffer amplifier.
The device is manufactured on a low-cost Gallium Ars-
enide MESFET process, and has been designed for use
as a general purpose buffer in high-end communication
systems operating at frequencies from less than 300MHz
to higher than 2500MHz. With +5 dBm output power, it
may also be used as a driver in transmitter applications.
The device is packaged in an 8-lead plastic package. The
product is self-contained, requiring just a resistor and
blocking capacitors to operate. The output power, com-
bined with 50dB reverse isolation at 900MHz allows
excellent buffering of LO sources to impedance changes.
The device can be used in 3 V battery applications. The
unit has a total gain of 17dB with only 14 mA current from
a 3V supply.
Single 2.7V to 6.0V Supply
+4dBm Output Power
21dB Small Signal Gain
50dB Reverse Isolation at 900MHz
Low DC Current Consumption of 14mA
300MHz to 2500MHz Operation
RF2301
High Isolation Buffer Amplifier
RF2301 PCBA
Fully Assembled Evaluation Board
4
Rev A8 010717
0.244
0.229
0.157
0.150
0.018
0.014
0.050
0.068
0.053
NOTES:
1. Shaded lead is Pin 1.
2. All dimensions are excluding
mold flash.
3. Lead coplanarity -
0.005 with respect to datum "A".
Dimensions in mm
0.196
0.189
0.008
0.004
-A-
8 MAX
0 MIN
0.034
0.016
0.009
0.007
Package Style: SOIC-8
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RF2301
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (V
DD
)
-0.5 to +6.5
V
DC
DC Supply Current
60
mA
Input RF Power
+10
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T = 25C, V
DD
=5V
DC
Nominal Frequency Range
300 to 2500
MHz
Input IP
3
-8
dBm
Noise Figure
8
dB
Input VSWR
<2:1
In a 50
system
Output VSWR
<2:1
In a 50
system
Power Supply Voltage
2.7 to 6.0
V
Nominal 5 V Configuration
Using Broad Band Application Circuit,
V
DD
=5V
DC
, Freq= 2500MHZ, T = 25C
Gain
21
24
26
dB
P
1dB
Output Power
+4
dBm
Supply Current
10
30
40
mA
Reverse Isolation
50
dB
900MHz, without RF input
50
dB
900MHz, with RF input, saturated
40
dB
2500MHz, without RF input
40
dB
2500MHz, with RF input, saturated
Nominal 3 V Configuration
Using Broad Band Application Circuit,
V
DD
=3V
DC
, Freq= 2500MHZ, T = 25C
Gain
15
17
dB
P
1dB
Output Power
0
dBm
Supply Current
14
mA
Reverse Isolation
50
dB
900MHz, without RF input
50
dB
900MHz, with RF input, saturated
40
dB
2500MHz, without RF input
40
dB
2500MHz, with RF input, saturated
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Pin
Function
Description
Interface Schematic
1
GND
Low inductance ground connections. Use individual vias to backside
ground plane, placed within 0.030" of pin landing for optimum perfor-
mance.
2
GND
Same as pin 1.
3
RF IN
DC-coupled RF input. A broadband impedance match is produced by
internal shunt resistive feedback. The DC level is 0V. If a DC voltage is
present from connected circuitry, an external DC-blocking capacitor is
required for the proper DC operating point.
4
GND
Same as pin 1.
5
GND
Same as pin 1.
6
RF OUT
Open drain RF output. A broadband impedance match is produced by
an external 100
resistor to power supply as shown in Application
Schematic 1. Approximately 3dB improvement in gain and output
power can be obtained over at least a 20% bandwidth by replacing the
resistor to power supply with an external chip inductor network as
shown in Application Schematic 2. An external DC-blocking capacitor is
required if the following circuitry is not DC-blocked.
7
VDD2
Power supply connections. Bypass with external chip capacitor and
individual via to backside ground plane.
8
VDD1
Power supply connections. Bypass with external chip capacitor and
individual via to backside ground plane.
RF IN
RF OUT
V
DD1
V
DD2
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RF2301
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Application Schematic 1
Broadband Match
Application Schematic 2
Optimum Match
1
2
3
4
8
7
6
5
RF IN
100 pF
100 pF
RF OUT
100
1 nF
V
DD
1
2
3
4
8
7
6
5
100 pF
RF IN
L1
100 pF
RF OUT
L2
100 pF
V
DD
FREQUENCY
900 MHz
2500 MHz
L1
18 nH
----
L2
22 nH
2.7 nH
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RF2301
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Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Evaluation Board Layout
1.43" x 1.43"
Board Thickness 0.031"; Board Material FR-4
1
2
3
4
8
7
6
5
C1
100 pF
P1-1
See Chart
2301400A
P1
1
2
3
P1-1
VDD
GND
FREQUENCY
BAND
COMPONENT
BROADBAND
(default config.)
900 MHz
2450 MHz
100
0
0
N/A
N/A
N/A
18 nH
22 nH
2.7 nH
A
B
C
50
strip
J1
RF IN
A
B
C2
100 pF
50
strip
J2
RF OUT
C4
1 nF
C3
100 pF
C
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