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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
5
4
RF OUT
GND
GND
GND
RF IN
RF2338
GENERAL PURPOSE AMPLIFIER
Broadband, Low Noise Gain Blocks
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Final PA for Low Power Applications
Broadband Test Equipment
The RF2338 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50
input and output
impedances and requires only two external DC biasing
elements to operate as specified. The RF2338 is avail-
able in a very small industry-standard SOT 5-lead surface
mount package, enabling compact designs which con-
serve board space.
DC to 6000MHz Operation
Internally Matched Input and Output
12dB Small Signal Gain
+24dBm Output IP3
+11dBm Output Power
Single Positive Power Supply
RF2338
General Purpose Amplifier
RF2338 PCBA
Fully Assembled Evaluation Board
4
Rev A5 010228
1
1.60
+ 0.01
0.400
2.80
+ 0.20
2.90
+ 0.10
0.45
+ 0.10
3 MAX
0 MIN
0.127
0.15
0.05
1.44
1.04
Dimensions in mm.
0.950
Package Style: SOT 5 Lead
4-160
RF2338
Rev A5 010228
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Current
75
mA
Input RF Power
+15
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-60 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25C, I
CC
=40mA
Frequency Range
DC to 6000
MHz
3dB Bandwidth
3.5
GHz
Gain
12.1
dB
Freq= 100MHz
11.8
dB
Freq= 1000MHz
11.2
dB
Freq=2000MHz
9.7
dB
Freq= 3000MHz
8.7
dB
Freq= 4000MHz
8
dB
Freq= 5000MHz
7.3
dB
Freq= 6000MHz
Gain Flatness
0.5
dB
100MHz to 2000MHz
Noise Figure
5.3
dB
Freq= 2000MHz
Input VSWR
2.0:1
In a 50
system, DC to 3000MHz
Output VSWR
2.0:1
In a 50
system, DC to 3000MHz
Output IP
3
+24
dBm
Freq=2000MHz50kHz, P
TONE
= -10dBm
Output P
1dB
+10.5
dBm
Freq=2000MHz
Reverse Isolation
15.6
dB
Freq=2000MHz
Power Supply
With 22
bias resistor
Device Operating Voltage
3.6
V
At pin 5 with I
CC
=40mA
Operating Current
40
mA
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4-161
RF2338
Rev A5 010228
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Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
Pin
Function
Description
Interface Schematic
1
GND
Ground connection. Keep traces physically short and connect immedi-
ately to ground plane for best performance.
2
GND
Same as pin 1.
3
RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
4
GND
Same as pin 1.
5
RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
CC
. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
Care should also be taken in the resistor selection to ensure that the
current into the part never exceeds 75mA over the planned oper-
ating temperature. This means that a resistor between the supply and
this pin is always required, even if a supply near 3.6V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
R
V
SUPPL Y
V
DEVI CE
(
)
I
CC
-------------------------------------------------------
=
RF OUT
RF IN
1
2
3
5
4
C2
100 pF
C1
100 pF
50
strip
50
strip
J2
RF OUT
J1
RF IN
L1
100 nH
R1
22
VCC
P1-1
C3
100 pF
C4
1
F
233X410-
P1
1
2
3
P1-1
VCC
GND
NC
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