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RF Micro Devices, Inc.
7625 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
VDD2
VDD1
PD
I SIG
I REF
Q REF
Q SIG
GC1
GC2
LO1
RF OUT
GND4
GND3
LO2
GND2
MIX IN+
MIX IN-
GND1
MOD OUT-
MOD OUT+
POWER
CONTROL
-45
+45
RF2413
Digital and Spread Spectrum Systems
Analog Communication Systems
GSM Systems
CDMA Systems
General Purpose Frequency Conversion
Portable Battery Powered Equipment
The RF2413 is a monolithic integrated transmitter univer-
sal modulation IC capable of generating modulated AM,
PM, or compound carriers in the VHF/UHF frequency
range. The modulation is performed at VHF, then the
resulting spectrum is upconverted to a frequency range
between 100 MHz and 1000MHz. Up to 60 dB of power
control is possible through the use of two gain control
pins. The IC contains all of the required components to
implement the modulation function including differential
amplifiers for the baseband inputs, a 90 hybrid phase
splitter, limiting LO amplifiers, two balanced mixers, a
combining, gain-controlled differential amplifier, a second
balanced mixer, and an output gain-controlled RF ampli-
fier which will drive a 50
load.
Single 3V to 6.5V Power Supply
Low Broadband Noise Floor
Excellent Amplitude & Phase Balance
Digitally Controlled Power Down
30MHz to 100MHz IF Frequency
200MHz to 1000MHz RF Frequency
RF2413
Gain Controlled Dual-Conversion Quadrature Modu-
lator
RF2413 PCBA
Fully Assembled Evaluation Board
Rev B3 990419
.493
.486
.050
.016
8 MAX
0MIN
.010
.008
.299
.292
.018
.014
.050
1
.413
.398
.009
.005
.092
!"
5-20
RF2413
Rev B3 990419
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to 7.0
V
DC
Input LO and RF Levels
+6
dBm
I and Q Modulation Levels
V
DD
V
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Modulation Signals (I &Q)
T = 25C, V
DD
=5V, V
REF
=2.5V,
BB=100kHz, LO1=70MHz, LO2=700MHz,
V
MOD
=3.0V
PP
, SSB, unless indicated other-
wise.
Frequency Range
DC to 25
MHz
Signal Level
3.0
V
PP
For 1dB compression
Reference Voltage (V
REF
)
2.0 to 3.0
V
Input Impedance
3
k
Amplitude Balance
0.1
dB
Quadrature Phase Error
1
First LO Input
Frequency Range
30 to 200
MHz
For 30dB sideband suppression
30 to 250
MHz
For 20dB sideband suppression
Power Level
-5 to +6
dBm
Input Impedance
750- j500
At 100MHz, without external 50
termina-
tion
IF Inputs & Outputs (MOD
OUT & MIX IN)
Output Impedance
290- j160
At 100MHz
170- j180
At 200MHz
Input Impedance
6000- j2500
At 100MHz
5200- j2800
At 200MHz
Second LO Input
Frequency Range
100 to 1000
MHz
Power Level
0 to +6
dBm
Input Impedance
2000- j3000
At 300MHz, without external 50
termina-
tion
600- j1400
At 1000MHz, without external 50
termina-
tion
RF Output
Output Power
V
DD
=6V, LO1,2 power =0dBm, SSB
+6
dBm
Freq=200MHz to 500MHz
-2
+2
+5
dBm
Freq=500MHz to 800MHz
-1
dBm
Freq=800MHz to 1000MHz
Total Gain Control Range
75
dB
Gain 1 and Gain 2
Gain Control Voltage for mini-
mum gain
1.5
V
Gain Control Voltage for maxi-
mum gain
5.0
V
Nominal Output Impedance
50
Output VSWR
1.5:1
Freq<600MHz
3:1
600MHz<Freq<1000MHz
Output Broadband Noise Power
-155
dBm/Hz
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
5-21
RF2413
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Spurious
Single sideband modulation
Sideband Suppression
30
35
dBc
Unadjusted.
Carrier Suppression
20
25
dBc
Unadjusted. Modulation DC offset may be
externally adjusted for maximum suppres-
sion. Suppression is then typically 40dBc.
First LO Harmonics
20
dBc
Odd unfiltered IF
30
dBc
Even unfiltered IF
Power Down
Turn On/Off Time
<100
ns
PD Input Resistance
>50
k
Power Down "ON"
V
CC
V
Threshold voltage
Power Down "OFF"
0
V
Threshold voltage
Power Supply
Voltage
5
V
Specifications
3 to 6.5
V
Operating limits
Current Consumption
35
50
mA
5-22
RF2413
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Pin
Function
Description
Interface Schematic
1
VDD2
Supply Voltage for the RF Output Stage only. A 33pF external bypass
capacitor is required and an optional 0.1
F will be required if no other
low frequency bypass capacitors are nearby. The trace length between
the pin and the bypass capacitors should be minimized. The ground
side of the bypass capacitors should connect immediately to ground
plane.
Though the part is designed to run from a 5V supply, it will work at 3V.
Gain and available output power will be reduced by 5 to 10dB. This also
means that the part is sensitive to unintended power supply variation.
Power supply voltage should be kept constant, or another way of main-
taining constant output power is required.
2
VDD1
Supply Voltage for all circuits except the RF Output Stage. The same
comments as for VDD2 apply to this pin.
3
PD
Power Down control. When this pin is 0V all circuits are turned off, and
when this pin is VDD all circuits are operating. This is a high impedance
input, internally connected to the gates of a few FETs. To minimize cur-
rent consumption in power down mode, this pin should be as close to
0V as possible. Turn-on voltage of some parts of the circuit may be as
low as 0.1V. In order to maximize output power this pin should be as
close to VDD as possible during normal operation.
4
I SIG
Baseband input to the I mixer. This pin is DC coupled. Maximum output
power is obtained when the input signal has a peak to peak amplitude
of 5V. The DC level supplied to this pin should be VDD2/2. Input imped-
ance of this pin is about 3k
.
5
I REF
Reference voltage for the I mixer. This voltage should be the same as
the DC voltage supplied to the I SIG pin. To obtain a carrier suppres-
sion of better than 25dB it may be tuned 0.15V (relative to the I SIG
DC voltage). Without tuning it will typically be better than 25dB. Input
impedance of this pin is about 3k
.
6
Q REF
Reference voltage for the Q mixer. This voltage should be the same as
the DC voltage supplied to the Q SIG pin. To obtain a carrier suppres-
sion of better than 25dB it may be tuned 0.15V (relative to the Q SIG
DC voltage). Without tuning, the carrier suppression will typically be
better than 25dB. The input impedance of this pin is about 3 k
.
Same as pin 5.
7
Q SIG
Baseband input to the Q mixer. This pin is DC coupled. Maximum out-
put power is obtained when the input signal has a peak to peak ampli-
tude of 5V. The DC level supplied to this pin should be VDD2/2. Input
impedance of this pin is about 3k
.
Same as pin 4.
8
GC1
Gain control of the IF input amplifier. This pin, when used as the only
gain control, will give a 30dB control range. When used together with
GC2, a 60dB range is available. When this pin is at 1.8V or lower, the
gain is set to the minimum; when this pin is at 3.8V or above, the gain is
set to the maximum; see the plot below for typical characteristics. If
fixed maximum output level is required, it is recommended to connect
this pin to VDD. There are no provisions in the chip for limiting the
bandwidth of the gain control, so very fast response times are avail-
able. If a slower response is desired, an external capacitor can be
added.
9
GC2
Gain control for the RF output amplifier. This pin has the same control
characteristics as GC1.
Same as pin 8.
V
DD1
V
DD2
PD
I SIG
I REF
GCx
5-23
RF2413
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10
LO1
High impedance modulator LO input. A shunt 56
resistor can be used
for matching. This pin is NOT internally DC blocked. An external block-
ing capacitor must be provided if the pin is connected to a device with
DC present. A DC path to ground (i.e. an inductor or resistor to ground)
is, however, acceptable at this pin. If a blocking capacitor is required, a
value of 1nF is recommended.
11
MOD OUT+
Balanced IF output port. If no filtering is required this pin can be con-
nected directly to the MIX IN+ pin. This pin is NOT DC blocked and car-
ries DC. A blocking capacitor of 1nF is needed when this pin is
connected to a DC path. An appropriate matching network may be
needed if an IF filter is used.
12
MOD OUT-
Same as pin 11, except complementary output.
See pin 11.
13
GND1
Ground connection for all baseband circuits, modulator and the IF
buffer amplifier. Keep traces physically short and connect immediately
to ground plane for best performance.
14
MIX IN-
High impedance balanced input to the gain controlled IF stage. This pin
has an internal DC blocking capacitor. If no IF filter is needed, this pin
may be connected directly to MOD OUT-. If an IF filter is used, an exter-
nal shunt resistor to ground may be needed to provide correct matching
for the filter.
15
MIX IN+
Same as pin 14, except complementary input.
See pin 14.
16
GND2
Ground connection for the limiting LO2 buffer amplifier. Keep traces
physically short and connect immediately to ground plane for best per-
formance.
17
LO2
Mixer LO Input port. A shunt 56
resistor can be used for matching.
This pin has internal DC blocking,
18
GND3
Ground connection for the IF mixer and the RF gain control stage. Keep
traces physically short and connect immediately to ground plane for
best performance.
19
GND4
Ground connection for the RF output stage. Keep traces physically
short and connect immediately to ground plane for best performance.
20
RF OUT
50
output. This pin is not internally DC blocked, and an external
blocking capacitor of 100pF is required.
LO1
MOD OUT+
MOD OUT-
MIX IN-
MIX IN+
BIAS
BIAS
BIAS
BIAS
LO2
RF OUT
5-24
RF2413
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100 nF
33 pF
1
F
100 nF
100 nF
1 nF
33 pF
RF OUTPUT
56
V
DD
CMOS
V
REF
56
LO 2 INPUT
POWER
DOWN
GAIN
CONTROL 1
LO 1
INPUT
Q INPUT
Q INPUT
GAIN
CONTROL 2
1
2
3
4
5
6
7
8
9
10
20
19
18
17
16
15
14
13
12
11
POWER
CONTROL
-45
+45
Note 3
Note 1
Note 2
Optional; High input impedance without resistor. SMD
resistor mounted adjacent to package pin, grounded through
via to the ground plane.
If no IF filter is needed, tie pins 11, 12, 14, and 15 as shown.
Otherwise insert the filter and the matching network.
Gain control pins (8 and 9) may be tied together directly.
NOTE 1:
NOTE 2:
NOTE 3:
470
470
470
470
50
strip
50
strip
50
strip
5-25
RF2413
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(Download Bill of Materials from www.rfmd.com.)
1
2
3
4
5
6
7
8
9
1 0
2 0
1 9
1 8
1 7
1 6
1 5
1 4
1 3
1 2
1 1
C3
1 nF
C4
100 pF
R2
56
C5
100 pF
C2
33 pF
C6
100 nF
R1
56
FOR 50
MATCH
FOR 50
MATCH
LO1 IN
J3
QSIG
J2
ISIG
J1
P1-3
P1-1
RF OUT
J5
LO2 IN
J4
P1-1
P1-3
P1
REF
GND
VCC
1
2
3
2413400 Rev A
C1
33 pF
POWER
CONTROL
-45
+45
P2-1
P2-3
P2-1
P2-3
P2
GND
GAIN 1
1
2
3
GAIN 2
50
strip
50
strip
50
strip
50
strip
50
strip
5-26
RF2413
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Board Size 0.039"; Board Material FR-4; Multi-Layer
5-27
RF2413
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Pout vs. Gain Control Voltages
-70
-60
-50
-40
-30
-20
-10
0
10
1.5
2
2.5
3
3.5
4
4.5
5
Vgain (Volts)
Pout (dBm)
Vg1=Vg2=V gain
Vg1=Vdd, Vg2=V gain
Vg2=Vdd, Vg1=V gain
BB: 100 kHz, 1.5 Vpp
LO1: 124 MHz, 0 dBm
LO2: 569 MHz, 0 dBm
Vdd: 5.0V, Vref=2.5V
5-28
RF2413
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