8-281
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
Switched
Attenuator
Chip Power
ON/OFF
1
2
3
4
5
10
9
8
7
6
VCC1
LNA IN
GND2
GND1
ATTN
PD
GATE
DRAIN
SOURCE
LNA OUT
RF2495
900MHZ 3V LOW CURRENT LNA/MIXER
UHF Digital and Analog Receivers
Digital Communication Systems
Spread-Spectrum Communication Systems
Commercial and Consumer Systems
Portable Battery-Powered Equipment
General Purpose Frequency Conversion
The RF2495 is a front-end receiver IC chip developed for
the handset/portable battery-powered equipment mar-
kets. The chip contains an RF 15dB attenuator, an LNA
and a passive mixer. By using a state-of-the-art Silicon
Bi-CMOS process, the LNA has high dynamic range
under low DC operating conditions and the passive mixer
requires no DC bias at all. Packaged in the industry-stan-
dard MSOP-10 package, the device is well-suited for lim-
ited board space applications.
Single Supply 3V Operation
1.9dB LNA NF
0dBm Input IP3
Small MSOP-10 Package
Low Current Drain (11mA maximum)
Very Low Cost
RF2495
900MHz 3V Low Current LNA/Mixer
RF2495 PCBA
Fully Assembled Evaluation Board
0
Rev A4 030220
0.192
0.118
0.118
0.008
0.004
0.002
0.038
0.006
0.0197
0.0004
0.021
0.004
0.006
0.002
0.014 TYP
6.0
0.0
Package Style: MSOP-10
!
8-282
RF2495
Rev A4 030220
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
-0.5 to +3.6
V
DC
Input RF Level
+10
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-40 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25C, V
CC
=3.0V
RF/LO Frequency Range
850 to 940
MHz
Specifications
800 to 1000
MHz
Usable range
LNA
Gain
15.5
17.0
dB
High gain state
1.0
4.0
dB
Low gain state
Input IP3
-2.5
+1.0
dBm
High gain state, RF IN=-25dBm
+11.0
+12.5
dBm
Low gain state, RF IN=-15dBm
Noise Figure
1.9
2.2
dB
High gain state
13.5
dB
Low gain state
Input VSWR
1.67:1
Output VSWR
1.67:1
Mixer
Conversion Gain
-6.5
-5.5
dB
With LO=+2dBm
-6.0
-5.5
dB
With LO=+4dBm
Input IP3
+7.5
+11.0
dBm
With LO=+2dBm
+10.0
+13.0
dBm
With LO=+4dBm
LO Input Level
-2
4.0
dBm
Attenuation
ATTN Enable
V
CC
-0.3
>1.6
V
Low gain state
ATTN Disable
0
0.3
V
High gain state
Power Down
Chip Enable
V
CC
-0.3
>1.6
V
Voltage applied to PD pin
Chip Disable
0
V
Voltage applied to PD pin
Power Supply
Voltage
3.0
V
Specifications
2.7 to 3.3
V
Operating limits
Current Consumption
10
12
mA
Chip enabled
<1
3.0
uA
Chip disabled
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
8-283
RF2495
Rev A4 030220
Pin
Function
Description
Interface Schematic
1
VCC1
Supply voltage for the LNA, bias circuits, and control logic. External RF
bypassing is required. The trace length between the pin and the bypass
capacitors should be minimized. The ground side of the bypass capaci-
tors should connect immediately to ground plane.
2
LNA_IN
RF Input pin. This pin is internally matched for optimum noise figure
from a 50
source. This pin is internally DC-biased and, if connected
to a device with DC present, should be blocked with a capacitor suit-
able for the frequency of operation.
3
GND2
Ground connection. For best performance, keep traces physically short
and connect immediately to ground plane.
4
GND1
Ground connection for the LNA circuits. For best performance, keep
traces physically short and connect immediately to ground plane.
See pin 2.
5
ATTN
Attenuation pin. A logic high reduces LNA gain by 15dB.
6
LNA OUT
LNA Output pin. This pin requires a connection to V
CC
through an
inductor.
7
SOURCE
Connection to source of MOSFET transistor used as mixer. Drain and
source are symmetric.
8
DRAIN
Connection to drain of MOSFET transistor used as mixer.
See pin 7.
9
GATE
Connection to gate of MOSFET transistor used as mixer. Internally
DC-biased. Use DC-blocking capacitor.
See pin 7.
10
PD
Power control. A logic "low" turns the part off. A logic "high" (>1.6V)
turns the part on.
ESD
This diode structure is used to provide electrostatic discharge protec-
tion to 3kV using the Human body model. The following pins are pro-
tected: 1, 3, 5, 9, 10.
GND1
LNA IN
VBIAS
ATTN
GND2
V
CC
LNA OUT
GATE
DRAIN
SOURCE
PD
GND2
V
CC
V
CC
8-284
RF2495
Rev A4 030220
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
ATTN
C4
0.01
F
C2
4.7
F
+
R1
10
VCC1
C1
22 nF
J1
LNA IN
L5
68 nH
L4
10 nH
C10
5 pF
J4
RF IN
C11
10 pF
J5
IF OUT
R2
10
VCC2
C2
2.4 pF
C5
47 pF
J3
LNA OUT
L2
10 nH
50
strip
50
strip
50
strip
50
strip
C3
47 pF
Switched
Attenuator
Chip Power
ON/OFF
1
2
3
4
5
10
9
8
7
6
2495400A
P1
1
2
3
CON3
P1-3
ENABLE
GND
P1-1
VCC1
P2
1
2
3
CON3
P2-3
ATTN
GND
P2-1
VCC2
C12
2.2 nF
R3
330
L1
12 nH
ENABLE
C7
10 pF
L3
8.2 nH
C9
6 pF
J2
LO IN
50
strip
+
C14
4.7 pF
8-285
RF2495
Rev A4 030220
Evaluation Board Layout
Board Size 1.108" x 1.281"
Board Thickness 0.031", Board Material FR-4
8-286
RF2495
Rev A4 030220
LNA: Gain versus Frequency Over Temperature
(V
CC
=2.78V)
0.0
4.0
8.0
12.0
16.0
20.0
800.0
825.0
850.0
875.0
900.0
925.0
950.0
975.0
1000.0
Frequency (MHz)
Gain (dB)
-40C High Gain [dB]
25C High Gain [dB]
85C High Gain [dB]
-40C Low Gain [dB]
25C Low Gain [dB]
85C Low Gain [dB]
LNA: IIP3 versus Frequency and
P1dB versus Frequency Over Temperature
(V
CC
=2.78V)
-1.0
0.0
1.0
2.0
3.0
4.0
5.0
800.0
825.0
850.0
875.0
900.0
925.0
950.0
975.0
1000.0
Frequency (MHz)
IIP3 (dBm) and P1dB (dBm)
-40C IIP3 [dBm]
25C IIP3 [dBm]
85C IIP3 [dBm]
-40C P1dBOut [dBm]
25C P1dBOut [dBm]
85C P1dBOut [dBm]
LNA: Noise Figure versus Frequency Over Temperature
(V
CC
=2.78V)
1.0
1.5
2.0
2.5
3.0
800.0
825.0
850.0
875.0
900.0
925.0
950.0
975.0
1000.0
Frequency (MHz)
Noise Figure (dB)
-40C Noise Figure [dB]
25C Noise Figure [dB]
85C Noise Figure [dB]
Mixer: Conversion Gain versus LO Power,
OIP3 versus LO Power Over Temperature
-8.0
-6.0
-4.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
12.0
14.0
-2.0
0.0
2.0
4.0
6.0
8.0
10.0
LO Power (dBm)
Conversion Gain (dB) and OIP3 (dB)
-40.0C_Conversion Gain [dB]
25.0C_Conversion Gain [dB]
85.0C_Conversion Gain [dB]
-40.0C_OIP3 [dBm]
25.0C_OIP3 [dBm]
85.0C_OIP3 [dBm]
V
CC
=2.78V, Freq=900MHz
Mixer: Conversion Gain versus Frequency,
OIP3 versus Frequency Over Temperature
-7.0
-5.0
-3.0
-1.0
1.0
3.0
5.0
7.0
9.0
11.0
800.0
850.0
900.0
950.0
1000.0
Frequency (MHz)
Conversion Gain (dB) and OIP3 (dB)
-40.0C Conversion Gain [dB]
25.0C Conversion Gain [dB]
85.0C Conversion Gain [dB]
-40.0C OIP3 [dBm]
25.0C OIP3 [dBm]
85.0C OIP3 [dBm]
V
CC
=2.78V, LO=4dBm
PDF 
ZIP