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Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
3
VREG
2
RF IN
1
VCC1
6
RF OUT
7
GND
5
VCC2
4
VM
O
D
E
RF3100-2
3V 900MHZ LINEAR AMPLIFIER MODULE
3V CDMA/AMPS Cellular Handsets
3V CDMA2000/1X Cellular Handsets
Spread-Spectrum Systems
Designed for Compatibility with Qualcomm
Chipsets
The RF3100-2 is a high-power, high-efficiency linear
amplifier module targeting 3V hand-held systems. The
device is manufactured on an advanced Gallium Arsenide
Heterojunction Bipolar Transistor (HBT) process, and has
been designed for use as the final RF amplifier in dual-
mode 3V CDMA/AMPS hand-held digital cellular equip-
ment, spread-spectrum systems, and other applications
in the 824MHz to 849 MHz band. The RF3100-2 has a
digital control line for low power application to reduce the
current drain. The device is self-contained with 50
input
and output that is matched to obtain optimum power, effi-
ciency, and linearity characteristics. The module is an
ultra-small 6mmx6 mm land grid array with backside
ground.
Input/Output Internally Matched@50
Single 3V Supply
28dBm Linear Output Power
29dB Linear Gain
45mA Idle Current
RF3100-2
3V 900MHz Linear Amplifier Module
RF3100-2 PCBA
Fully Assembled Evaluation Board
2
Rev A3 011017
6.0 sq
0.100
3.000
4.390
0.600
0.800 sq
typ
NOTE: Nominal thickness, 1.55 mm.
1.700
0.100
2.500
Dimensions in mm.
Package Style: LGM (6mmx6mm)
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Rev A3 011017
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Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage (RF off)
+8.0
V
DC
Supply Voltage (P
OUT
31dBm)
+5.2
V
DC
Control Voltage (V
REG
)
+4.2
V
DC
Input RF Power
+10
dBm
Mode Voltage (V
MODE
)
+3.5
V
DC
Operating Case Temperature
-30 to +110
C
Storage Temperature
-30 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
High Power State
(V
MODE
Low)
Typical Performance at V
CC
=3.2V,
V
REG
=2.85V, T
AMB
=25C,
Frequency= 824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
849
MHz
Linear Gain
26
29
dB
Second Harmonic
-35
dBc
Third Harmonic
-40
dBc
Maximum Linear Output Power
(CDMA Modulation)
28
dBm
Total Linear Efficiency
35
%
V
CC
= 3.2V, P
OUT
=28dBm
(room temperature)
Adjacent Channel Power
Rejection
-48
-45
dBc
ACPR @885kHz, P
OUT
= Max P
OUT
-57.0
-54.5
dBc
ACPR @1980kHz, P
OUT
= Max P
OUT
Input VSWR
<2:1
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
Noise Power
-135
dBm/Hz
At 45MHz offset.
Low Power State
(V
MODE
High)
Typical Performance at V
CC
=3.2V,
V
REG
=2.85V, T
AMB
=25C,
Frequency= 824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
849
MHz
Linear Gain
18
21
dB
Second Harmonic
-35
dBc
Third Harmonic
-40
dBc
Maximum Linear Output Power
(CDMA Modulation)
16
dBm
Adjacent Channel Power
Rejection
-51
-46
dBc
ACPR @885kHz, P
OUT
= Max P
OUT
-62
-59
dBc
ACPR @1980kHz, P
OUT
= Max P
OUT
Input VSWR
2.5:1
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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Rev A3 011017
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Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
FM Mode
Typical Performance at V
CC
= 3.2V,
V
REG
= 2.85V, T
AMB
= 25C,
Frequency= 824MHz to 849MHz
(unless otherwise specified)
Frequency Range
824
849
MHz
Gain
28
dB
Second Harmonic
-35
dBc
Third Harmonic
-40
dBc
Max CW Output Power
31.5
dBm
Total Efficiency (AMPS mode)
44
%
V
CC
= 3.7V, V
REG
=2.85V, P
OUT
= 31.5dBm
(room temperature)
Input VSWR
<2:1
Output VSWR
10:1
No damage.
6:1
No oscillations. > -70dBc
DC Supply
T
AMB
= 25C
Supply Voltage Range
3.2
3.7
4.2
V
Quiescent Current
140
200
mA
V
MODE
= Low, V
REG
=2.85V
45
80
mA
V
MODE
= High, V
REG
=2.85V
V
REG
Current
10
mA
V
MODE
= High
V
MODE
Current
1
mA
Turn On/Off Time
<40
s
V
REG
switch from Low to High,
I
CC
to within 90% of the final value,
P
OUT
within 1dB of the final value
Total Current (Power Down)
3
5
A
V
REG
= Low, V
MODE
= Low
V
REG
"Low" Voltage
0
0.5
V
V
REG
"High" Voltage
2.8
2.85
2.9
V
V
MODE
"Low" Voltage
0
0.5
V
V
MODE
"High" Voltage
2.0
3.0
V
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Pin
Function
Description
Interface Schematic
1
VCC1
First stage collector supply. A low frequency decoupling capacitor
(e.g., 4.7
F) is required.
2
RF IN
RF input internally matched to 50
. This input is internally AC-coupled.
3
VREG
Regulated voltage supply for amplifier bias. In Power Down mode, both
V
REG
and V
MODE
need to be LOW (< 0.5V).
4
VMODE
For nominal operation (High Power Mode), V
MODE
is set LOW. When
set HIGH, devices are turned off to improve efficiency.
5
VCC2
Output stage collector supply. A low frequency decoupling capacitor
(e.g., 4.7
F) is required.
6
RF OUT
RF output internally matched to 50
. This output is internally
AC-coupled.
7
GND
Ground connection. Connect to package base ground. For best perfor-
mance, keep traces physically short and connect immediately to
ground plane.
Pkg
Base
GND
Ground connection. The backside of the package should be soldered to
a top side ground pad which is connected to the ground plane with mul-
tiple vias. The pad should have a short thermal path to the ground
plane.
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Rev A3 011017
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Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
3
2
1
6
7
5
4
50
strip
J6
RF OUT
50
strip
J2
RF IN
C1
4.7
F
C2
4.7
F
VCC1
VMODE
VCC2
VREG
C4
4.7
F
C3
4.7
F
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