4-583
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
R
F
IN
GND
RF
OUT
GN
D
1
2
3
4
RF3374
GENERAL PURPOSE AMPLIFIER
Basestation Applications
Broadband, Low-Noise Gain Blocks
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Final PA for Low-Power Applications
High Reliability Applications
The RF3374 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50
input and output
impedances and requires only two external DC-biasing
elements to operate as specified.
DC to >6000MHz Operation
Internally Matched Input and Output
20dB Small Signal Gain
+32dBm Output IP3
+18dBm Output Power
RF3374
General Purpose Amplifier
RF3374PCBA-410 Fully Assembled Evaluation Board
0
Rev A7 050310
Shaded lead is pin 1.
Dimensions in mm.
0.43
0.38
1.60
1.40
1.75
1.40
1.80
1.45
0.53
0.41
1.04
0.80
0.50
0.30
4.60
4.40
2.60
2.40
3.10
2.90
0.48
0.36
2 PL
Package Style: SOT89
Pb-Free Product
4-584
RF3374
Rev A7 050310
Absolute Maximum Ratings
Parameter
Rating
Unit
Input RF Power
+13
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-60 to +150
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 C, I
CC
=65mA (See Note 1.)
Frequency Range
DC to >6000
MHz
3dB Bandwidth
3
GHz
Gain
18.7
20.5
dB
Freq=500MHz
18.5
20.2
21.0
dB
Freq=1000MHz
17.0
18.9
22.0
dB
Freq=2000MHz
17.6
dB
Freq=3000MHz
16.2
Freq=4000MHz
13.5
Freq=6000MHz
Noise Figure
3.5
dB
Freq=2000MHz
Input VSWR
<1.5:1
In a 50
system, 500MHz to 3500MHz
<2:1
In a 50
system, 3500MHz to 5000MHz
Output VSWR
<1.6:1
In a 50
system, 500MHz to 3000MHz
<2:1
In a 50
system, 3000MHz to 5000MHz
Output IP
3
+29.0
+32.0
dBm
Freq=2000MHz
Output P
1dB
+17.5
dBm
Freq=2000MHz
Reverse Isolation
22.0
dB
Freq=2000MHz
Thermal
I
CC
=65mA, P
DISS
=274mW. (See Note 3.)
Theta
JC
170
C/W
V
PIN
=4.2V
Maximum Measured Junction
Temperature at DC Bias Con-
ditions
132
C
T
CASE
=+85C
Mean Time To Failure
3050
years
T
CASE
=+85C
Power Supply
With 22
bias resistor
Device Operating Voltage
4.50
4.55
V
At pin 8 with I
CC
=65mA at +25C
5.95
6.30
V
At evaluation board connectors, I
CC
=65mA
Operating Current
65
80
mA
See Note 2.
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are
not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used.
Note 2: The RF3374 must be operated at or below 80mA in order to achieve the thermal performance listed above. While the RF3374
may be operated at higher bias currents, 65mA is the recommended bias to ensure the highest possible reliability and electrical
performance.
Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution
should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 80mA over all
intended operating conditions.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4-585
RF3374
Rev A7 050310
Pin
Function
Description
Interface Schematic
1
RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
2
GND
Ground connection.
3
RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
CC
. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
Because DC is present on this pin, a DC blocking capacitor, suitable for
the frequency of operation, should be used in most applications. The
supply side of the bias network should also be well bypassed. Care
should also be taken in the resistor selection to
ensure that the cur-
rent into the part never exceeds 80mA over the planned operating
temperature.
4
GND
Ground connection.
R
V
SUPPLY
V
DEVICE
(
)
I
CC
-------------------------------------------------------
=
RF IN
RF OUT
4-586
RF3374
Rev A7 050310
Application Schematic
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
1
2
3
4
100 pF
RF IN
100 pF
RF OUT
100 nH
22
100 pF
V
CC
1
F
+
1
2
3
4
C1
100 pF
C2
100 pF
L1
100 nH
R1
22
C3
100 pF
C4
1
F
+
VCC
50
strip
J2
RF OUT
50
strip
J1
RF IN
P1
1
2
3
CON3
P1-1
VCC1
GND
337x410, r.1
4-587
RF3374
Rev A7 050310
Evaluation Board Layout
Board Size 1.195" x 1.000"
Board Thickness 0.033", Board Material FR-4
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