4-599
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
12
11
10
4
5
6
1
2
3
9
8
7
GND
NC
NC
NC
NC
RF OUT
RF IN
GND
GND
GND
GND
GND
RF3396
GENERAL PURPOSE AMPLIFIER
Basestation Applications
Broadband, Low-Noise Gain Blocks
IF or RF Buffer Amplifiers
Driver Stage for Power Amplifiers
Final PA for Low-Power Applications
High Reliability Applications
The RF3396 is a general purpose, low-cost RF amplifier
IC. The device is manufactured on an advanced Gallium
Arsenide Heterojunction Bipolar Transistor (HBT) pro-
cess, and has been designed for use as an easily-cas-
cadable 50
gain block. Applications include IF and RF
amplification in wireless voice and data communication
products operating in frequency bands up to 6000MHz.
The device is self-contained with 50
input and output
impedances and requires only two external DC-biasing
elements to operate as specified. The device is designed
for cost effective high reliability in a plastic package. The
3mmx3mm footprint is compatible with standard ceramic
and plastic Micro-X packages.
DC to >6000MHz Operation
Internally Matched Input and Output
22dB Small Signal Gain
+2.0dB Noise Figure
+11.5dBm Output P1dB
Footprint Compatible with Micro-X
RF3396
General Purpose Amplifier
RF3396 PCBA
Fully Assembled Evaluation Board
0
Rev A6 040224
3.00
3.00
2.75
SQ
-B-
-A-
3
1
2 PLCS
0.10 C A
2 PLCS
0.10 C B
2 PLCS
0.10 C A
2 PLCS
0.10 C B
Shaded lead is pin 1.
Dimensions in mm.
-C-
12
MAX
SEATING
PLANE
0.05 C
0.20
REF.
0.90
0.85
0.05
0.00
0.60
0.24
TYP
0.10
C A B
M
0.35
0.30
PIN 1 ID
R0.20
1.90
1.60
0.45
0.35
0.375
0.275
0.65
1.15
0.85
Package Style: QFN, 12-Pin, 3x3
4-600
RF3396
Rev A6 040224
Absolute Maximum Ratings
Parameter
Rating
Unit
Input RF Power
+3
dBm
Operating Ambient Temperature
-40 to +85
C
Storage Temperature
-60 to +150
C
I
CC
40
mA
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall
T=25 C, I
CC
=35mA (See Note 1.)
Frequency Range
DC to >6000
MHz
3dB Bandwidth
2
GHz
Gain
21.0
22.7
dB
Freq=500MHz
20.2
22.2
24.2
dB
Freq=850MHz
17.8
19.8
21.8
dB
Freq=2000MHz
17.4
dB
Freq=3000MHz
16.0
Freq=4000MHz
12.9
Freq=6000MHz
Noise Figure
2.0
dB
Freq=2000MHz
Input VSWR
<1.9:1
In a 50
system, DC to 6000MHz
Output VSWR
<1.9:1
In a 50
system, DC to 3000MHz
<1.4:1
In a 50
system, 3000MHz to 6000MHz
Output IP
3
+21.5
+23.5
dBm
Freq=850MHz
+22.0
+24.0
dBm
Freq=2000MHz
Output P
1dB
+9.5
+11.5
dBm
Freq=850MHz
+9.5
+11.5
dBm
Freq=2000MHz
Reverse Isolation
22.5
dB
Freq=2000MHz
Thermal
I
CC
=35mA, P
DISS
=110mW. (See Note 3.)
Theta
JC
335
C/W
Maximum Measured Junction
Temperature at DC Bias
Conditions
122
C
T
AMB
=+85C
Mean Time To Failures
17,635
years
T
AMB
=+85C
Power Supply
With 22
bias resistor
Device Operating Voltage
3.3
3.4
3.5
V
At pin 8 with I
CC
=35mA
3.9
4.2
4.5
v
At evaluation board connector, I
CC
=35mA
Operating Current
35
40
mA
See Note 2.
Note 1: All specification and characterization data has been gathered on standard FR-4 evaluation boards. These evaluation boards are
not optimized for frequencies above 2.5GHz. Performance above 2.5GHz may improve if a high performance PCB is used.
Note 2: The RF3396 must be operated at or below 40mA in order to achieve the thermal performance listed above. While the RF3396
may be operated at higher bias currents, 35mA is the recommended bias to ensure the highest possible reliability and electrical
performance.
Note 3: Because of process variations from part to part, the current resulting from a fixed bias voltage will vary. As a result, caution
should be used in designing fixed voltage bias circuits to ensure the worst case bias current does not exceed 40mA over all
intended operating conditions.
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
4-601
RF3396
Rev A6 040224
Pin
Function
Description
Interface Schematic
1
NC
No internal connections. It is not necessary to ground this pin.
2
RF IN
RF input pin. This pin is NOT internally DC blocked. A DC blocking
capacitor, suitable for the frequency of operation, should be used in
most applications. DC coupling of the input is not allowed, because this
will override the internal feedback loop and cause temperature instabil-
ity.
3
NC
No internal connections. It is not necessary to ground this pin.
4
GND
Ground connection.
5
GND
Ground connection.
6
GND
Ground connection.
7
NC
No internal connections. It is not necessary to ground this pin.
8
RF OUT
RF output and bias pin. Biasing is accomplished with an external series
resistor and choke inductor to V
CC
. The resistor is selected to set the
DC current into this pin to a desired level. The resistor value is deter-
mined by the following equation:
Care should also be taken in the resistor selection to
ensure that the
current into the part never exceeds 40mA over the planned oper-
ating temperature. This means that a resistor between the supply and
this pin is always required, even if a supply near 3.4V is available, to
provide DC feedback to prevent thermal runaway. Because DC is
present on this pin, a DC blocking capacitor, suitable for the frequency
of operation, should be used in most applications. The supply side of
the bias network should also be well bypassed.
9
NC
No internal connections. It is not necessary to ground this pin.
10
GND
Ground connection.
11
GND
Ground connection.
12
GND
Ground connection.
Die
Flag
GND
Ground connection. To ensure best performance, avoid placing ground
vias directly beneath the part.
R
V
SUPPLY
V
DEVICE
(
)
I
CC
-------------------------------------------------------
=
RF OUT
RF IN
4-602
RF3396
Rev A6 040224
Application Schematic
Evaluation Board Schematic
(Download Bill of Materials from www.rfmd.com.)
12
11
10
4
5
6
1
2
3
9
8
7
RF OUT
22 pF
R
BIAS
10 nF
22 pF
47 nH
V
CC
22 pF
RF IN
C2
100 pF
C1
100 pF
50
strip
50
strip
J2
RF OUT
J1
RF IN
L1
100 nH
R1
22
VCC
P1-1
C3
100 pF
C4
1
F
12
11
10
4
5
6
1
2
3
9
8
7
NOTE:
Evaluation board optimized for frequencies above 300 MHz and below 2.5 GHz.
For operation below 300 MHz the value of inductor L1 and capcitors C1 and C2
should be increased.
P1-1
VCC
GND
P1-3
NC
P1
1
2
3
CON3
4-603
RF3396
Rev A6 040224
Evaluation Board Layout
Board Size 1.195" x 1.000"
Board Thickness 0.033", Board Material FR-4
Note: A small amount of ground inductance is required to achieve datasheet performance. The necessary inductance
may be generated by ensuring that no ground vias are placed directly below the footprint of the part.
Overlay of Suggested Micro-X and 3mmx3mm Layouts Showing
Compatibility
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