4-623
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
1
2
3
4
8
7
6
5
PACKAGE BASE
GND
Bias
Circuit
VREF
NC
RFIN
NC
VBIAS
NC
RFOUT/VCC
RFOUT/VCC
RF3809
GaAs HBT PRE-DRIVER AMPLIFIER
GaAs Pre-Driver for Basestation Amplifiers
PA Stage for Commercial Wireless Infrastructure
Class AB Operation for NMT, GSM, DCS, PCS,
and UMTS Transceiver Applications
The RF3809 is a GaAs pre-driver power amplifier, specifi-
cally designed for wireless infrastructure applications.
Using a highly reliable GaAs HBT fabrication process,
this high-performance single-stage amplifier achieves
high output power over a broad frequency range. The
RF3809 also provides excellent efficiency and thermal
stability through the use of a thermally-enhanced surface-
mount plastic-slug package. Ease of integration is accom-
plished through the incorporation of an optimized evalua-
tion board design provided to achieve proper 50
operation. Various evaluation boards are available to
address a broad range of wireless infrastructure applica-
tions: NMT 450MHz; GSM850MHz; GSM900MHz;
DCS1800MHz; PCS1900MHz; and, UMTS2200MHz.
High Output Power of 2.0W P1dB
High Linearity
High Power-Added Efficiency
Thermally-Enhanced Packaging
Broadband Platform Design Approach,
450MHz to 2500MHz
RF3809
GaAs HBT Pre-Driver Amplifier
RF3809PCBA-410
Fully Assembled Evaluation Board, 450MHz
RF3809PCBA-411
Fully Assembled Evaluation Board, 869MHz to 894MHz
RF3809PCBA-412
Fully Assembled Evaluation Board, 920MHz to 960MHz
RF3809PCBA-413
Fully Assembled Evaluation Board, 1800MHz to 1880MHz
RF3809PCBA-414
Fully Assembled Evaluation Board, 1930MHz to 1990MHz
RF3809PCBA-415
Fully Assembled Evaluation Board, UMTS
0
Rev A0 050310
0.066
0.056
-A-
0.004
0.002
0.126
0.088
EXPOSED
DIE FLAG
0.099
0.061
0.0192
0.0138
0.244
0.230
0.157
0.150
0.196
0.189
0.050
0.035
0.016
0.0098
0.0075
8 MAX
0 MIN
Shaded lead is pin 1.
Package Style: SOIC-8
Preliminary
Pb-Free Product
Preliminary
4-624
RF3809
Rev A0 050310
Absolute Maximum Ratings
Parameter
Rating
Unit
Supply Voltage
9.0
V
RF - Input Power
26
dBm
Operating Current
775
mA
Load VSWR
4:1
Operating Temperature
-40 to +85
C
Storage Temperature
-40 to +105
C
Parameter
Specification
Unit
Condition
Min.
Typ.
Max.
Overall - 450MHz
Frequency
420
480
MHz
I
REF
=15mA, V
CC
=8V, V
REF
=8V, V
BIAS
=8V,
Temp=+25C
P1dB
+32.0
+33.0
+34.5
dBm
P
IN
, Maximum
24.0
dBm
Total Efficiency
38.0
45.0
53.0
%
@P1dB
Total Power Added Efficiency
37.0
44.0
52.0
%
@P1dB
Gain (S21)
14
13
12
dB
Second Harmonic (2fo)
-32
-27
-19
dBc
@P1dB
Third Harmonic (3fo)
-38
-36
-30
dBc
@P1dB
Input Return Loss (S11)
-20
-16
-11
dB
Output Return Loss (S22)
-6.5
-5.5
-4.0
dB
Two-Tone Specification
OIP3
43.0
46.5
48.0
dBm
19dBm/tone
44.0
48.0
51.0
dBm
21dBm/tone
44.5
50.0
53.0
dBm
23dBm/tone
45.0
48.0
52.0
dBm
25dBm/tone
Caution! ESD sensitive device.
RF Micro Devices believes the furnished information is correct and accurate
at the time of this printing. However, RF Micro Devices reserves the right to
make changes to its products without notice. RF Micro Devices does not
assume responsibility for the use of the described product(s).
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