NO
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4-1
Product Description
Ordering Information
Typical Applications
Features
Functional Block Diagram
RF Micro Devices, Inc.
7628 Thorndike Road
Greensboro, NC 27409, USA
Tel (336) 664 1233
Fax (336) 664 0454
http://www.rfmd.com
Optimum Technology Matching Applied
Si BJT
GaAs MESFET
GaAs HBT
Si Bi-CMOS
SiGe HBT
Si CMOS
InGaP/HBT
GaN HEMT
SiGe Bi-CMOS
1
3
2
4
RF OUT
RF IN
GND
GND
MARKING - R1
RF3816
CASCADABLE BROADBAND
GaAs MMIC AMPLIFIER DC TO 6GHz
Cellular Basestation Amplifiers and
Transceivers
Gain Stage or Driver Amplifiers for Linear and
Saturated Amplifiers
Narrow and Broadband Commercial and
Military Radio Designs
The RF3816 is a high-performance InGaP/GaAs general
purpose RF and microwave gain block amplifier. This
50
amplifier is based on a reliable HBT MMIC design,
providing unsurpassed performance for many small-sig-
nal applications. Designed with an external bias resistor,
the RF3816 provides high output power and high gain
over broad frequency range. This low-cost amplifier is
packaged in a thermally efficient, industry standard,
ceramic Micro-X package providing excellent Theta
JC
performance.
Reliable, Low-Cost HBT Design
12.1dB Gain, +17.3dBm P1dB@1.0GHz
High P1dB of +14.7dBm@6.0GHz
Single 6V Power Supply Operation
50
I/O Matched
Thermally-Efficient Package
RF3816
Cascadable Broadband GaAs MMIC Amplifier DC to
6GHz (Bulk: 25 piece increment)
RF3816SB
5-piece Sample Bag
RF3816SR
100-piece Reel
RF3816TR7
7" Reel (1,000 pieces)
RF3816PCBA-410 Evaluation Board
0
Rev A2 041013
NOTES:
1. Shaded lead is pin 1.
2. Darkened areas are metallization.
0.070
sq.
45
+ 1
R1
0.055
+ 0.005
0.020
+ 0.002
0.040
+ 0.002
0.200 sq.
Typ
Package Style: Micro-X, 4-Pin, Ceramic
Proposed
NOT FOR NEW DESIGNS
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