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Электронный компонент: 2N4401

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UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
NPN Medium Power Transistor
(Switching)
UMT4401 / SST4401 / MMST4401 / 2N4401
!Features
1) BV
CEO
>40V (I
C
=1mA)
2) Complements the UMT4403 / SST4403 / MMST4403
/ PN4403.
!
!
!
!Package, marking, and packaging specifications
Part No.
Packaging type
Marking
Code
Basic ordering unit (pieces)
UMT4401
UMT3
R2X
T106
3000
SST4401
SST3
R2X
T116
3000
MMST4401
SMT3
R2X
T146
3000
2N4401
TO-92
-
T93
3000
!
!
!
!Absolute maximum ratings
(Ta=25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
Tj
Tstg
Limits
60
40
6
0.6
0.625
150
-55~+150
Unit
V
V
V
A
Collector power
dissipation
P
C
0.2
W
C
C
2N4401
UMT4401
SST4401
MMST4401
!
!
!
!External dimensions
(Units : mm)
UMT4401
SST4401
MMST4401
2N4401
0
~
0.1
0.2Min.
2.4
0.2
1.3
0.95
0.45
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+0.2
-
0.1
-
0.1
+0.2
+0.1
-
0.06
+0.1
-
0.05
(2)
(1)
(3)
0~0.1
2.8
0.2
1.6
0.3
~
0.6
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+0.2
-
0.1
-
0.1
+0.2
+0.1
-
0.06
+0.1
-
0.05
(2)
(1)
(3)
0
~
0.1
(2)
(1)
(3)
0.1~0.4
2.1
0.1
1.25
0.1
0.90.1
0.2
0.70.1
0.150.05
0.3
2.00.2
1.30.1
0.65 0.65
+0.1
-
0
4.8
0.2
(12.7Min.)
2.5Min.
4.8
0.2
3.7
0.2
5
0.45
0.1
2.3
0.5
0.1.
2.5 +0.3
-
0.1
(1)
(2)
(3)
All terminals have the same
dimensions
All terminals have the same
dimensions
All terminals have the same
dimensions
ROHM : UMT3
EIAJ : SC-70
(1) Emitter
(2) Base
(3) Collector
ROHM : SST3
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
(1) Emitter
(2) Base
(3) Collector
ROHM : TO-92
EIAJ : SC-43
(1) Emitter
(2) Base
(3) Collector
!
!
!
!Electrical characteristics
(Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
60
40
6
-
-
-
-
-
-
-
-
-
-
0.1
0.1
V
V
V
A
A
I
C
=100
A
I
C
=1mA
I
E
=100
A
V
CB
=35V
V
EB
=5V
-
-
1.2
Base-emitter saturation voltage
V
BE(sat)
-
-
0.95
V
-
-
0.75
I
C
/I
B
=500mA/50mA
Collector-emitter saturation voltage
V
CE(sat)
-
-
0.4
V
I
C
/I
B
=150mA/15mA
I
C
/I
B
=500mA/50mA
I
C
/I
B
=150mA/15mA
40
-
-
100
-
300
DC current transfer ratio
h
FE
80
-
-
-
40
-
-
20
-
-
V
CE
=1V, I
C
=0.1mA
V
CE
=1V, I
C
=1mA
V
CE
=1V, I
C
=10mA
V
CE
=1V, I
C
=150mA
V
CE
=2V, I
C
=500mA
Transition frequency
Collector output capacitance
f
T
Cob
250
-
-
-
-
6.5
MHz
pF
V
CE
=10V, I
E
=-20mA, f=100MHz
V
CB
=10V, f=100kHz
Emitter input capacitance
Cib
-
-
30
pF
V
EB
=0.5V, f=100kHz
Delay time
td
-
-
15
ns
V
CC
=30V, V
EB(OFF)
=2V, I
C
=150mA, I
B1
=15mA
V
CC
=30V, V
EB(OFF)
=2V, I
C
=150mA, I
B1
=15mA
Rise time
tr
-
-
20
ns
Storage time
tstg
-
-
225
ns
V
CC
=30V, I
C
=150mA, I
B1
=-I
B2
=15mA
V
CC
=30V, I
C
=150mA, I
B1
=-I
B2
=15mA
Fall time
tf
-
-
30
ns
UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
!
!
!
!Electrical characteristic curves
0
50
100
10
0
5
I
B
=0
A
100
200
400
500
600
300
Ta=25
C
COLLECTOR CURRENT : Ic
(mA)
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
0.1
10
1.0
100
1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
V
CE
=
10V
1V
Fig.3 DC current gain vs. collector current(
)
1.0
10
100
1000
0.2
0.3
0.1
0
COLLECTOR EMITTER SATURATION VOLTAGE : V
CE(sat)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
I
C
/ I
B
=
10
Fig.2 Collector-emitter saturation
voltage vs. collector current
0.1
10
1.0
100
1000
100
1000
10
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(
mA)
Ta
=
125
C
V
CE
=
10V
25
C
-
55
C
Fig.4 DC current gain vs. collector current(
)
0.1
10
1.0
100
1000
100
1000
10
AC CURRENT GAIN : h
FE
COLLECTOR CURRENT : Ic(
mA)
Ta
=
25
C
V
CE
=
10V
f
=
1kHz
Fig.5 AC current gain vs. collector current
1.0
10
100
1000
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
C
I
C
/ I
B
=
10
Fig.6 Base-emitter saturation
voltage vs. collector current
UMT4401 / SST4401 / MMST4401 / 2N4401
Transistors
1
10
100
1000
0.8
1.2
1.8
1.6
0.4
0
BASE EMITTER VOLTAGE : V
BE(ON)
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
V
CE
=
10V
Fig.7 Grounded emitter propagation
characteristics
1.0
10
100
1000
100
1000
10
TURN ON TIME : ton
(ns)
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
C
I
C
/ I
B
=
10
V
CC
=
30V
10V
Fig.8 Turn-on time vs. collector
current
1.0
10
100
1000
100
500
5
10
RISE TIME : tr
(ns)
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
C
V
CC
=
30V
I
C
/ I
B
=
10
Fig.9 Rise time vs. collector
current
1.0
10
100
1000
100
1000
10
STORAGE TIME : ts
(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.10 Storage time vs. collector
current
1.0
10
100
1000
100
1000
10
FALL TIME : tf(ns)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
V
CC
=
30V
I
C
=
10I
B1
=
10I
B2
Fig.11 Fall time vs. collector
current
0.1
1.0
10
100
10
100
1
CAPACITANCE
(pF)
REVERSE BIAS VOLTAGE(V)
Ta
=
25
C
f
=
1MHz
Cib
Cob
Fig.12 Input / output capacitance
vs. voltage
1
10
100
1000
10
1
100
0.1
COLLECTOR-EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : Ic(mA)
Ta
=
25
C
100MHz
200MHz
250MHz 300MHz
250MHz
Fig.13 Gain bandwidth product
1.0
10
100
1000
100
1000
10
CURRENT GAIN-BANDWIDTH PRODUCT
(MHz)
COLLECTOR CURRENT : Ic
(mA)
Ta
=
25
C
V
CE
=
10V
Fig.14 Gain bandwidth product
vs. collector current