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Электронный компонент: 2SA1776

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Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
82
150
12
18
270
V
V
V
V
MHz
pF
I
C
50 A
I
C
1mA
I
E
50 A
V
CB
400V
V
EB
6V
I
C
/I
B
100mA / 10mA
V
BE(sat)
V
I
C
/I
B
100mA / 10mA
V
CE
5V , I
C
50mA
V
CB
5V , I
E
50mA , f 5MHz
V
CE
10V , I
E
0A , f 1MHz
t
on
0.6
t
stg
2.7
t
f
1
Type
2SA1812
MPT3
PQ
T100
3000
2SA1727
CPT3
PQ
TL
3000
2SA1776
ATV
PQ
TV2
AJ
2500
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
7
0.5
2
0.5
150
55 to
+
150
Unit
V
V
V
A (DC)
1.0
1
A (Pulse)
W
W
W
W (Tc 25
C)
1
2SA1812
2SA1727
2SA1776
W
10
1
C
C
1 Single pulse 2 When mounted on a 40 40 0.7mm ceramic board.
3 When t = 1.7mm and the foil collector area on the PC board is 1cm
2
or greater.
I
C
100mA, R
L
1.5k
I
B1
I
B2
10mA
V
CC
to
150V
Denotes
h
FE
2
3
High-voltage Switching Transistor
( 400V, 0.5A)
2SA1812 / 2SA1727 / 2SA1776
2SA1812 / 2SA1727 / 2SA1776
Packaging specifications and h
FE
Package
h
FE
Code
Basic ordering unit (pieces)
Marking
Absolute maximum ratings (Ta=25
C)
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Electrical characteristics (Ta=25
C)
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current tranfer ratio
Transition frequency
Output capacitance
Base-emitter saturation voltage
Turn-on time
Storage time
Fall time
400
400
7
10
10
1
1.2
A
A
s
s
s
400
400
Features
1) High breakdown voltage, BV
CEO
= 400V.
2) Low saturation voltage, typically V
CE (sat)
= 0.3V at I
C
/ I
B
=
100mA / 10mA.
3) High switching speed, typically tf : 1 s at I
C
= 100mA.
4) Wide SOA (safe operating area).
Transistors
2/3
2/3
1/3
Rev.A
2SA1812 / 2SA1727 / 2SA1776
Electrical characteristic curves
0
-10
-6
-8
-4
-0.1
-0.2
-0.3
-0.4
-0.5
-2
0
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : l
C
(A)
Fig.1 Grouded emitter output
characteristics
-
80mA
-
200mA
0
-2.0
-0.2-0.4-0.6-0.8-1.0-1.2-1.4-1.6 -1.8
-0.0005
-0.001
-0.002
-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
COLLECTOR TO EMITTER VOLTAGE : V
BE
(V)
COLLECTOR CURRENT : l
C
(A)
Fig.2 Grounded emitter propagation
characteristics
V
CE
=
-
5V
-0.001
-0.002 -0.01
-0.05
-1
-0.1
-0.2-0.5
-0.02
-0.005
1
2
5
10
20
50
100
200
500
1000
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.3 DC current gain vs.
collector current ( )
Ta
=
25
C
V
CE
=
-
10V
-
5V
Ta
=
25
C
l
B
=
-
20mA
-
40mA
-
60mA
-
100mA
-
120mA
-
140mA
-
160mA
-
180mA
-
25
C
25
C
Ta=100
C
-0.001
-0.002 -0.01
-0.05
-1
-0.1
-0.2-0.5
-0.02
-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
-5
-10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
Fig.6 Collector-emitter saturation
voltage vs. collector current
Base-emitter saturation
voltage vs. collector current
l
C
/l
B
=
10
Ta
=
100
C
Ta
=
-
25
C
V
CE(sat)
V
BE(sat)
-0.001
-0.002 -0.01
-0.05
-
1
-0.1
-0.2-0.5
-0.02
-0.005
1
2
5
10
20
50
100
200
500
1000
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.4 DC current gain vs.
collector current ( )
V
CE
=
-
5V
Ta
=
100
C
25
C
-
25
C
-0.001
-0.002 -0.01
-0.05
-1
-0.1
-0.2-0.5
-0.02
-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
-5
-10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
Fig.5 Collector-emitter saturation
voltage vs. collector current
Ta
=
25
C
l
C
/l
B
=
50
20
10
25
C
25
C 100
C
-
25
C
-1
-2 -5-10
-20 -50-100 -200-500
-0.001
-0.002
-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
-5
-10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : l
C
(A)
Fig.9 Safe operating area (2SA1812)
Ta
=
25
C
(When mounted on a
40 40 0.7mm
ceramic board.)
Single
nonrepetitive
pulse
P
W
=
10ms
100ms
l
C Max.
(Pulse )
0.0005
0.001
0.005
0.2 0.5
0.02 0.050.1
0.01
0.002
1
2
5
10
20
50
100
200
500
1000
COLLECTOR CURRENT : I
E
(A)
TRANSITION FREQUENCY : f
T
(MH
Z
)
Fig.7 TRANSITION FREQUENCY
vs. EMITTER CURRENT
Ta
=
25
C
V
CE
=
-
5V
-0.05
-50
-1
-2 -5-10
-20
-0.5
-0.1 -0.2
1
2
5
10
20
50
100
200
500
1000
COLLECTOR TO BASE VOLTAGE: V
CB
(V)
COLLECTOR OUTPUT CAPACITANCE : C
Ob
(pF)
Fig.8 Collector output capacitance
vs. collector-base voltage
Ta
=
25
C
f
=
1MH
Z
l
E
=
0A
Transistors
1/3
1/3
1/3
2/3
Rev.A
2SA1812 / 2SA1727 / 2SA1776
Switching characteristic measurement circuit
V
IN
P
W
P
W
_
~50 s
duty cycle
<
=
1
l
B1
l
C
R
L
=1.5k
l
B2
V
CC
_
~-150V
R
G
T.U.T
+
V
BB
I
B
I
C
t
on
t
stg
t
f
l
c
l
B1
l
B2
90%
10%
0.001
1000
1
10
100
0.1
0.01
0.1
1
10
100
1000
10000
100000
PULSE WIDTH : P
W
(s)
TRANSIENT THERMAL RESISTANCE : R
th
(
C / W)
Fig.10 TRANSIENT THERMAL
RESISTANCE (2SA1812)
(1) When mounted on a
40 40 0.7mm ceramic board
(2) Unmounted
(2)
(1)
-1 -2
-5 -10 -20 -50-100-200 -500-1000
-0.001
-0.002
-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
-5
-10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : l
C
(A)
Fig.11 Safe operating area (2SA1727)
Tc
=
25
C
Single
nonrepetitive
pulse
P
W
=
10ms
100ms
0.001
1000
1
10
100
0.1
0.01
0.1
1
10
100
1000
10000
100000
PULSE WIDTH : P
W
(s)
TRANSIENT THERMAL RESISTANCE : R
th
(
C / W)
Fig.14 TRANSIENT THERMAL
RESISTANCE (2SA1776)
Fig.15 Switching characteristic measurement circuit
Using printed circuit board
1.7mm thick, collector plating
1cm
2
or larger.
0.001
1000
1
10
100
0.1
0.01
0.1
1
10
100
1000
10000
100000
TIME : t (s)
TRANSIENT THERMAL RESISTANCE : R
th
(
C / W)
Fig.12 TRANSIENT THERMAL
RESISTANCE (2SA1727)
(1) Using Infinite heat sink
(2) Unmounted
(2)
(1)
l
C Max.
(Pulse )
DC
-1 -2
-5 -10 -20 -50-100-200 -500-1000
-0.001
-0.002
-0.005
-0.01
-0.02
-0.05
-0.1
-0.2
-0.5
-1
-2
-5
-10
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : l
C
(A)
Fig.13 Safe operating area (2SA1776)
Ta
=
25
C
Single
nonrepetitive
pulse
P
W
=
10ms
100ms
l
C Max.
(Pulse )
DC
Transistors
3/3
Rev.A
Appendix
Appendix1-Rev1.1


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