2SA2007
Transistors
High-speed Switching Transistor (
-60V,-12A)
2SA2007
!Features
1) High switching speed.
(Typ. tf
= 0.15s at Ic = -6A)
2) Low saturation voltage.
(Typ. V
CE(sat)
= -0.2V at I
C
/ I
B
= -6A / -0.3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SC5526.
!External dimensions
(Units : mm)
ROHM : TO-220FN
(2) Collector(Drain)
(3) Emitter(Source)
(1) Base(Gate)
0.75
0.8
2.54
(1)
(3)
(2)
(1)
2.54
(3)
(2)
5.0
8.0
14.0
15.0
12.0
1.3
1.2
10.0
3.2
2.6
4.5
2.8
!Absolute maximum ratings
(Ta = 25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-
100
-
60
-
5
-
12
2
25
150
-
55
+
150
Unit
V
V
V
A
-
20
A(Pulse)
W
W(Tc
=
25
C)
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collectorpowerdissipation
Junction temperature
Storage temperature
!Packaging specifications and h
FE
Type
2SA2007
TO-220FN
F
500
Package
h
FE
Code
Basic ordering unit (pieces)
-
!Electrical characteristics
(Ta = 25
C)
Min.
Typ.
Max.
Unit
Conditions
BV
EBO
I
CBO
I
EBO
V
CE(sat)
f
T
Cob
-
5
-
-
-
160
-
-
-
-
-
-
-
-
80
250
-
-
-
10
-
10
-
0.3
320
-
-
V
V
A
A
V
-
MHz
pF
I
C
=
-
50
A
BV
CEO
-
60
-
-
V
I
C
=
-
1mA
I
E
=
-
50
A
V
CB
=
-
100V
V
EB
=
-
5V
I
C
/I
B
=
-
6A/
-
0.3A
-
-
-
0.5
V
I
C
/I
B
=
-
8A/
-
0.4A
V
BE(sat)
-
-
-
1.5
V
I
C
/I
B
=
-
8A/
-
0.4A
-
-
-
1.2
V
I
C
/I
B
=
-
6A/
-
0.3A
h
FE
V
CE
=
-
2V , I
C
=
-
2A
V
CE
=
-
10V , I
E
=
1
A , f
=
30MHz
V
CB
=
-
10V , I
E
=
0A , f
=
1MHz
ton
-
-
0.3
s
I
C
=
-
6A , R
L
=
5
tstg
-
-
1.5
s
I
B1
=
-
I
B2
=
-
0.3A
tf
-
-
0.3
s
V
CC
-
30V
Parameter
BV
CBO
Symbol
-
100
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Storage time
Turn-on time
Fall time
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