2SA2017
Transistors
Power Transistor (
-80V, -4A)
2SA2017
!
!
!
!Features
1) Low V
CE(sat)
. (Typ. 0.3V at I
C
/I
B
=
-2 / -0.2A)
2) Excellent DC current gain characteristics.
3) Pc = 30W (Tc = 25
C)
4) Wide SOA (safe operating area).
5) Complements the 2SC5574.
!
!
!
!Absolute maximum ratings
(Ta = 25
C)
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
-80
-80
-5
-4
30
150
-55~+150
Unit
V
V
V
A
-6
A(Pulse)
W(Tc = 25
C)
C
C
!
!
!
!Packaging specifications and h
FE
Type
Package
h
FE
Code
Basic ordering unit (pieces)
2SA2017
TO-220FN
E
-
500
!
!
!
!Electrical characteristics
(Ta = 25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-emitter breakdown voltage
Collector-base breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
-
80
-
80
-
5
-
-
-
100
-
-
-
-
-
-
-
-
12
80
-
-
-
-
10
-
10
-
1.5
200
-
-
V
V
V
A
A
V
-
MHz
pF
I
C
=
-
50
A
I
C
=
-
1mA
I
E
=
-
50
A
V
CB
=
-
80V
V
EB
=
-
4V
I
C
/I
B
=
-
2A/
-
0.2A
Base-emitter saturation voltage
V
CE(sat)
-
-
-
1.5
V
I
C
/I
B
=
-
2A/
-
0.2A
V
CE
/I
C
=
-
4V/
-
1A
V
CB
=
-
10V , I
E
= 0A , f = 1MHz
V
CE
=
-
12V , I
E
= 0.5A
-
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