2SC5103
Transistors
High speed switching transistor (60V, 5A)
2SC5103
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Features
1) Low V
CE(sat)
(Typ. 0.15V at I
C
/ I
B
= 3 / 0.15A)
2) High speed switching (tf : Typ. 0.1
s at I
C
= 3A)
3) Wide SOA. (safe operating area)
4) Complements the 2SA1952.
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
100
60
5
5
1
150
-
55~
+
150
Unit
V
V
V
A(DC)
10
A(Pulse)
W
10
W(Tc
=
25
C)
C
C
Single pulse Pw=100ms
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
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Packaging specifications and h
FE
Type
2SC5103
CPT3
PQ
TL
2500
Package
h
FE
Code
Basic ordering unit (pieces)
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External dimensions (Units : mm)
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
5.1
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
100
5
-
-
-
82
-
-
-
-
-
-
0.15
-
120
80
-
-
10
10
0.3
270
-
-
V
V
A
A
V
-
MHz
pF
I
C
=
50
A
BV
CEO
60
-
-
V
I
C
=
1mA
I
E
=
50
A
V
CB
=
100V
V
EB
=
5V
I
C
/I
B
=
3A/0.15A
V
BE(sat)
-
-
1.2
V
I
C
/I
B
=
3A/0.15A
-
-
0.5
V
I
C
/I
B
=
4A/0.2A
-
-
1.5
V
I
C
/I
B
=
4A/0.2A
V
CE
/I
C
=
2V/1A
V
CB
=
10V , I
E
=
0.5A , f
=
30MHz
V
CE
=
10V , I
E
=
0A , f
=
1MHz
ton
-
-
0.3
s
I
C
=
3A , R
L
=
10
tstg
-
-
1.5
s
I
B1
= -
I
B2
=
0.15A
tf
-
0.1
0.3
s
V
CC
30V
Transition frequency
Output capacitance
Turn-on time
Storage time
Fall time
Base-emitter saturation voltage
Collector-emitter saturation voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current
transfer ratio
Collector-base breakdown voltage
Measured using pulse current.
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