2SC5916
Transistor
1/3
Medium power transistor (30V, 2A)
2SC5916
!
!
!
!
Features
1) High speed switching. (Tf : Typ. : 20ns
at
I
C
= 2A)
2) Low saturation voltage, typically
(Typ. : 200mV
at
I
C
= 1.0A, I
B
= 0.1A)
3) Strong discharge power for inductive load and
capacitance load.
4) Complements the 2SA2113
!
Applications
!
!
!
!
External dimensions (Units : mm)
Each lead has same dimensions
Abbreviated symbol : UY
TSMT3
( 2
)
( 1
)
( 3
)
0 0.1
0.16
0.85
1.0MAX
0.7
2.9
2.8
1.9
1.6
0.95
0.95
0.4
0.3 0.6
(1) Base
(2) Emitter
(3) Collector
Low frequency amplifier
High speed switching
!
!
!
!
Structure
NPN Silicon epitaxial planar transistor
!
!
!
!
Packaging specifications
Taping
2SC5916
Type
TL
3000
Package
Basic ordering unit
(pieces)
Code
!
!
!
!
Absolute maximum ratings (Ta=25
C)
Parameter
V
V
V
A
mW
1 Pw
=
10ms
2 Each terminal mounted on a recommended land.
2
1
C
A
C
V
CBO
V
CEO
I
C
P
C
Tj
V
EBO
I
CP
Tstg
Symbol
30
30
6
2
4
500
150
-
55~
+
150
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
2SC5916
Transistor
2/3
!
!
!
!
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CEO
BV
CBO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
fT
h
FE
C
ob
T
on
Min.
30
30
6
-
-
-
120
-
-
-
-
-
-
-
250
-
-
15
25
-
-
-
1.0
1.0
-
200
400
390
-
-
-
V
I
C
=100
A
I
C
=1mA
I
E
=100
A
V
CD
=2V, I
C
=100mA
V
CB
=20V
V
EB
=4V
I
C
=1.0A, I
B
=0.1A
I
C
=2A
I
B1
=200mA
I
B2
=
-
200mA
V
CC
-
25V
V
CE
=10V, I
E
=
-
100mA, f
=10MHz
V
CB
=10V, I
E
=0, f=1MHz
V
V
A
A
MHz
mV
pF
ns
T
stg
-
100
-
ns
Tf
-
20
-
ns
Typ.
Max.
Unit
Conditions
Collector
-
base breakdown voltage
Collector cut-off current
DC current gain
Transition frequency
Collector output capacitance
Turn-on time
Storage time
Fall time
Emitter cut-off current
Collector
-
emitter staturation voltage
Collector
-
emitter breakdown voltage
Emitter
-
base breakdown voltage
!
!
!
!
h
FE
RANK
Q
R
120-270
180-390
!
!
!
!
Electrical characteristic curves
Fig.1 Safe operating area
COLLECTOR EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Single non repoetitive pulse
DC
1ms
10ms
1
10
0.1
100
10
1
0.1
0.01
100ms
Fig.2 Switching Time
1
0.01
0.1
10
1000
100
10
COLLECTOR CURRENT : I
C
(A)
SWITCHING TIME (ns)
Ta
=
25
C
V
CC
=
25V
I
C
/I
B
=
10/1
Tstg
Tf
Ton
Fig.3 DC current gain vs. collector
current
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
0.001
0.01
0.1
10
1
1
10
100
1000
Ta
=
125
C
Ta
=
25
C
Ta
=-
40
C
V
CE
=
2V
0.001
0.01
0.1
10
1
1
10
100
1000
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
V
CE
=
5V
V
CE
=
3V
V
CE
=
2V
Fig.4 DC current gain vs. collector
current
Ta
=
25
C
0.001
0.01
0.1
0.01
0.1
1
10
COLLECTOR SATURATION
VOLTAGE : V
CE
(sat
)(V)
COLLECTOR CURRENT : I
C
(A)
10
1
Fig.5 Collector-emitter saturation voltage
vs. collector current
I
C
/I
B
=
10/1
Ta
=
125
C
Ta
=
25
C
Ta
=-
40
C
0.001
0.1
0.01
10
1
0.01
0.1
1
10
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION
VOLTAGE : V
CE
(
sat)(V)
Fig.6 Collector-emitter saturation voltage
vs. collector current
I
C
/I
B
=
10/1
I
C
/I
B
=
20/1
Ta
=
25
C
2SC5916
Transistor
3/3
COLLECTOR CURRENT : I
C
(A)
BASE EMITTER SATURATION
VOLTAGE : V
BE
(sat
) (V)
Fig.7 Base-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
10
1
Ta
=
100
C
I
C
/I
B
=
10/1
Ta
=
25
C
Ta
=-
40
C
10
1
0.1
0.01
0.01
0.1
10
1
COLLECTOR CURRENT : I
C
(A)
BASE TO EMITTER VOLTAGE : V
BE
(V)
0
0.5
1
1.5
Fig.8 Ground emitter propagation
characteristics
Ta
=
100
C
Ta
=
25
C
Ta
=-
40
C
V
CE
=
2V
1000
TRANSITION FREQUENCY : f
T
(MHz)
EMITTER CURRENT : I
E
(A)
-
10
-
1
-
0.1
-
0.01
-
0.001
100
10
1
Fig.9 Transition frequency
Ta
=
25
C
V
CE
=
10V
100
COLLECTOR OUTPUT CAPACITANCE : C
OB
(
pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
100
10
1
0.1
10
1
Fig.10 Collector output capacitance
Ta
=
25
C
f
=
1MHz
!
!
!
!
Switching characteristics measurement circuits
Collector current
waveform
Base current
waveform
I
B1
I
B1
90%
10%
I
B2
I
B2
I
C
V
IN
P
W
I
C
R
L
=12.5
V
CC
25V
P
W
50 S
Duty cycle 1%
Ton
Tstg Tf
Appendix
Appendix1-Rev1.0
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document use silicon as a basic material.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
PDF 
ZIP