2SD1766 / 2SD1758 / 2SD1862
Transistors
Medium power transistor (32V, 2A)
2SD1766 / 2SD1758 / 2SD1862
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!
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!
Features
1) Low V
CE(sat)
.
V
CE(sat)
= 0.5V (Typ.)
(I
C
/I
B
= 2A / 0.2A)
2) Complements the 2SB1188 /
2SB1182 / 2SB1240
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Structure
Epitaxial planar type
NPN silicon transistor
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External dimensions (Units : mm)
-
0.1
+
0.2
-
0.05
+
0.1
-
0.1
+
0.2
+
0.2
-
0.1
(3)
(2)
(1)
4.0
0.3
1.0
0.2
0.5
0.1
2.5
3.0
0.2
1.5
0.1
1.5
0.1
0.4
0.1
0.5
0.1
0.4
0.1
0.4
1.5
4.5
1.6
0.1
-
0.1
+
0.2
-
0.1
+
0.2
+
0.3
-
0.1
2.3
0.2
2.3
0.2
0.65
0.1
0.9
0.75
1.0
0.2
0.55
0.1
9.5
0.5
5.5
1.5
0.3
2.5
1.5
2.3
0.5
0.1
6.5
0.2
5.1
C0.5
(3)
(2)
(1)
0.9
1.0
6.8
0.2
2.5
0.2
1.05
0.45
0.1
2.54 2.54
0.5
0.1
0.9
4.4
0.2
14.5
0.5
(1)
(2)
(3)
0.65Max.
(1) Emitter
(2) Collector
(3) Base
ROHM : ATV
(1) Base
(2) Collector
(3) Emitter
ROHM : CPT3
EIAJ : SC-63
(1) Base
(2) Collector
(3) Emitter
ROHM : MPT3
EIAJ : SC-62
2SD1766
2SD1758
2SD1862
Abbreviated symbol : DB
Denotes h
FE
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Absolute maximum ratings (Ta=25
C)
2SD1766
2SD1758
2SD1862
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector
power
dissipation
1 Single pulse, P
W
=20ms
2 When mounted on a 40
40
0.7 mm ceramic board.
3 Printed circuit board: 1.7 mm thick, collector copper plating 1 cm
2
or lager.
Parameter
Symbol
Limits
Unit
V
CBO
40
V
V
CEO
32
V
V
EBO
5
V
I
C
2
A (DC)
2.5
A (Pulse)
1
Tj
150
C
Tstg
-
55~
+
150
C
P
C
0.5
1
3
W
2
2
10
W (T
C
=
25
C)
W
2SD1766 / 2SD1758 / 2SD1862
Transistors
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
h
FE
f
T
Cob
Min.
40
32
5
-
-
-
82
-
-
-
-
-
-
-
-
-
0.5
100
30
-
-
-
1
1
0.8
390
390
-
-
V
I
C
=
50
A
I
C
=
1mA
I
E
=
50
A
V
CB
=
20V
V
EB
=
4V
I
C
/I
B
=
2A/0.2A
V
CE
=
5V, I
E
=-
50mA, f
=
100MHz
V
CE
=
3V, I
C
=
0.5A
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
A
A
V
-
MHz
pF
Typ.
Max.
Unit
Conditions
120
2SD1862
2SD1766,2SD1758
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current
transfer ratio
Transition frequency
Output capacitance
Measured using pulse current.
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Packaging specifications and h
FE
2SD1766
Type
T100
1000
h
FE
TL
2500
-
TV2
2500
-
-
2SD1758
-
-
2SD1862
-
PQR
PQR
QR
Package Taping
Code
Basic ordering
unit (pieces)
h
FE
values are classified as follows :
Item
h
FE
R
180~390
Q
120~270
P
82~180
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Electrical characteristic curves
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
0
2.0
1000
2000
1
200
500
100
20
50
10
2
5
0.2
0.6
0.4
0.8 1.0 1.2 1.4 1.6 1.8
Ta
=
25
C
V
CE
=
3V
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics
0
0.1
0.2
0.3
0.4
0.5
0.4
0.8
1.2
1.6
2.0
0
Ta
=
25
C
I
B
=
0A
3.0mA
2.7mA
2.4mA
2.1mA
1.8mA
1.5mA
1.2mA
0.9mA
0.6mA
0.3mA
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.3 DC current gain vs. collector
current
5
500
10
20
50 100 200
500 1A 2A
200
100
50
20
Ta
=
25
C
V
CE
=
3V
1V
2SD1766 / 2SD1758 / 2SD1862
Transistors
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation
voltage vs. collector current
500
20
200
100
50
5
10 20
50 100 200
500 1A 2A
Ta
=
25
C
10
20
I
C
/I
B
=
50
BASE SATURATION VOLTAGE : V
BE(sat)
(V)
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Collector-emitter saturation
voltage vs. collector current
5
1
2
0.2
0.5
0.1
10 20
50 100 200
500 1A 2A
Ta
=
25
C
I
C
/I
B
=
10
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.6 Transition frequency vs. emitter
current
-
2
-
1
200
-
5
-
10
-
20
-
50
-
100
-
200
-
500
-
1A
500
1000
100
50
20
Ta
=
25
C
V
CE
=
5V
0.5
200
10
500
1000
100
20
50
1
2
5
10
20
Ta
=
25
C
f
=
1MHz
I
E
=
0A
I
C
=
0A
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Cib
Cob
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.8 Safe operating area
0.01
5
0.1
50
2
0.2
0.5
1
0.1
0.02
0.05
0.2
0.5
1
2
5
10
20
(2SD1766)
P
W
=
10ms
100ms
DC
Ta
=
25
C
Single
nonrepetitive
pulse
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.9 Safe operating area
5
0.1
50
2
0.2
0.5
1
0.1
0.05
0.2
0.5
1
2
5
10
20
0.01
0.02
(2SD1758)
P
W
=100ms
T
C
=
25
C
Single
nonrepetitive
pulse
Ic Max
DC
Ic Max Pulse
Ta
=
25
C
Single
nonrepetitive
pulse
P
W
=
10ms
P
W
=
100ms
0.2
0.5
1
2
5
10
20
50
3
2
1
0.1
0.2
0.5
0.05
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.10 Safe operating area
(2SD1862)
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