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Электронный компонент: 2SD1782K

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2SD1782K
Transistors
Rev.A
1/3
Power Transistor (80V, 0.5A)
2SD1782K

Features
1) Low V
CE(sat)
.
V
CE(sat)
=0.2V(Typ.)
(I
C
/ I
B
=0.5 A / 50mA)
2) High V
CEO,
V
CEO
=80V
3) Complements the 2SB1198K.


Structure
Epitaxial planar type
NPN silicon transistor

External dimensions (Unit : mm)
0~0.1
2.8
0.2
1.6
0.3~0.6
1.1
0.8
0.1
0.15
0.4
2.9
0.2
1.9
0.2
0.95 0.95
+
0.2
-
0.1
-
0.1
+
0.2
+
0.1
-
0.06
+
0.1
-
0.05
(2)
(1)
(3)
(1) Emitter
(2) Base
(3) Collector
ROHM : SMT3
EIAJ : SC-59
Abbreviated symbol : AJ
All terminals have
same dimensions
Denotes h
FE

Absolute maximum ratings (Ta=25
C)
Parameter
V
CBO
V
CEO
V
EBO
P
C
Tj
Tstg
80
V
V
V
A
W
C
C
80
5
0.5
I
C
0.2
150
-
55 to
+
150
Symbol
Limits
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature

















2SD1782K
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE
V
CE(sat)
f
T
Cob
Min.
80
80
5
-
-
120
-
-
-
-
-
-
-
-
-
0.2
120
7.5
-
-
-
0.5
0.5
390
0.5
-
-
V
I
C
=
50
A
I
C
=
2mA
I
E
=
50
A
V
CB
=
50V
V
EB
=
4V
V
CE
=
3V, I
C
=
100mA
I
C
/I
B
=
500mA/50mA
V
CE
=
10V, I
E
= -
50mA, f
=
100MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
V
V
A
A
-
V
MHz
pF
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Collector-emitter saturation voltage
Output capacitance
Transition frequency
Packaging specifications and h
FE
Package
Code
T146
3000
Taping
Basic ordering
unit (pieces)
QR
h
FE
2SD1782K
Type

h
FE
values are classified as follows :
Item
Q
h
FE
120 to 270
R
180 to 390













Electrical characteristic curves
COLLECTOR CURRENT : I
C
(mA)
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.1 Grounded emitter propagation
characteristics
0.2
500
200
100
20
50
10
2
1
5
0.4
0.6
0.8
1.0
1.2
1.4
0
V
CE
=
3V
25
C
-
25
C
Ta
=
100
C
COLLECTOR CURRENT : I
C
(A)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.2 Grounded emitter output
characteristics
0
0.1
0.2
0.3
0.4
0.5
0
0.4
0.8
1.2
1.6
2.0
0.5mA
1.0mA
1.5mA
2.0mA
2.5mA
3.0mA
3.5mA
4.0mA
4.5mA
5.0mA
I
B
=
0mA
Ta
=
25
C
DC CURRENT GAIN : h
FE
COLLECTOR CURRENT : I
C
(mA)
Fig.3 DC current gain vs. collector
current
1
10
20
50
100
200
500
1000
2
5
10
20
50 100 200
5001000
V
CE
=
3V
Ta
=
100
C
25
C
-
25
C


2SD1782K
Transistors
Rev.A
3/3

COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.4 Collector-emitter saturation voltage
vs. collector current ( )
1
10
20
50
100
200
500
1000
2
5
10
20
50 100 200
5001000
Ta
=
25
C
20
10
I
C
/I
B
=
50
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.5 Collector-emitter saturation voltage
vs. collector current ( )
1
10
20
50
100
200
500
1000
2
5
10
20
50 100 200
5001000
l
C
/l
B
=
10
Ta
=
100
C
25
C
-
25
C
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.6 Collector-emitter saturation voltage
vs. collector current ( )
1
10
20
50
100
200
500
1000
2
5
10 20
50 100 200
500 1000
l
C
/l
B
=
20
Ta
=
100
C
25
C
-
25
C

COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(mV)
COLLECTOR CURRENT : I
C
(mA)
Fig.7 Collector-emitter saturation voltage
vs. collector current ( )
1
10
20
50
100
200
500
1000
2
5
10 20
50 100 200
5001000
l
C
/l
B
=
50
Ta
=
100
C
25
C
-
25
C
EMITTER CURRENT : I
E
(mA)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.8 Gain bandwidth product vs.
emitter current
-
1
10
20
50
100
200
500
1000
-
2
-
5
-
10
-
20
-
50
-
100
-
200
-
500
-
1000
Ta
=
25
C
V
CE
=
10V
Cob
Cib
COLLECTOR OUTPUT CAPACITANCE : Cob
(pF)
EMITTER INPUT CAPACITANCE : Cib
(pF)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
EMITTER TO BASE VOLTAGE : V
EB
(V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Ta
=
25
C
f
=
1MHz
I
E
=
0A
I
C
=
0A
0.1 0.2
0.5
1
2
5
10
20
50 100
1
2
5
10
20
50
100
200
500
1000
Appendix
Appendix1-Rev1.1


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(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
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Notes
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means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
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are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
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