2SD2212 / 2SD2143 / 2SD1866
Transistors
Rev.A
1/3
Medium Power Transistor
(Motor, Relay drive) (60
10V, 2A)
2SD2212 / 2SD2143 / 2SD1866
Features
1) Built-in zener diode between collector and base.
2) Strong protection against reverse surges due to "L"
loads.
3) Built-in resistor between base and emitter.
4) Built-in damper diode.
Absolute maximum ratings (Ta=25
C)
1 Single pulse Pw
=
100ms
2 When mounted on a 40
40
0.7mm ceramic board.
3 Printed circuit board 1.7mm thick, collector plating 1cm
2
or larger.
Junction temperature
Collector power
dissipation
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
60
10
60
10
6
2
0.5
2
10
2
1
3
150
-
55 to
+
150
Unit
V
V
V
A (DC)
3
A (Pulse)
W
1
1
W
W
W (Tc
=
25
C)
C
C
2SD2212
2SD2143
2SD1866
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Storage temperature
Packaging specifications and h
FE
Type
2SD2212
MPT3
1k to 10k
T100
1000
2SD2143
CPT3
1k to 10k
TL
2500
2SD1866
ATV
1k to 10k
TV2
2500
DR
-
-
Basic ordering unit (pieces)
Package
h
FE
Code
Marking
Equivalent circuit
R
2
R
1
E :
B :
C :
C
B
E
Emitter
Base
Collector
R
1
3.5k
R
2
300
External dimensions (Unit : mm)
2SD2212
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
EIAJ : SC-62
2SD2143
(3) Emitter(Source)
(2) Collector(Drain)
(1) Base(Gate)
ROHM : CPT3
EIAJ : SC-63
2.3
0.5
1.0
0.5
9.5
2.5
0.8Min.
1.5
6.5
2.3
( 2
)
( 3
)
C0.5
0.65
0.9
( 1
)
0.75
2.3
0.9
1.5
5.5
5.1
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
2SD1866
(2) Collector
(1) Emitter
ROHM : ATV
Taping specifications
(3) Base
0.45
1.05
0.5
(1)
0.65Max.
2.54
(2)
2.54
(3)
6.8
1.0
14.5
0.9
4.4
2.5
2SD2212 / 2SD2143 / 2SD1866
Transistors
Rev.A
2/3
Electrical characteristics (Ta=25
C)
Measured using pulse current.
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
BV
CBO
BV
CEO
I
CBO
I
EBO
V
CE(sat)
h
FE
Cob
50
50
-
-
-
1000
-
-
-
-
-
-
-
-
-
25
80
70
70
1.0
3
1.5
10000
-
V
V
A
mA
V
-
pF
I
C
=
50
A
I
C
=
5mA
V
CB
=
40V
V
EB
=
5V
I
C
/I
B
=
1A/1mA
V
CE
=
2V, I
C
=
1A
V
CE
=
5V, I
E
= -
0.1A, f=30MHz
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
MHz
Electrical characteristics curves
5
2
3
4
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
COLLECTOR CURRENT : I
C
(A)
Fig.1 Groundede emitter output
characteristics (
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Ta
=
25
C
I
B
=200
A
250
A
300
A
500
A
450
A
400
A
Ta
=
25
C
I
B
=200
A
250
A
300
A
500
A
450
A
400
A
350
A
2
4
6
8
1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
COLLECTOR CURRENT : I
C
(A)
Fig.2 Grounded emitter output
characteristics (
)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
0
Ta=100C
25C
-
25C
0.5
1
1.5
2
0.001
0.01
0.1
0.2
0.5
1
2
5
0.05
Fig.3 Grounded emitter propagation
characteristics
BASE TO EMITTER VOLTAGE : V
BE
(V)
V
CE
=2V
COLLECTOR CURRENT : Ic (A)
Ta
=
25
C
V
CE
=4V
V
CE
=2V
DC CURRENT GAIN : h
FE
0.001
0.01
0.1 0.2 0.5 1 2
5 10
10
20
50
100
200
500
1000
2000
5000
10000
Fig.4 DC current gain
vs. collector current (
)
COLLECTOR CURRENT : I
C
(A)
V
CE
=2V
Ta
=
100
C
-
25
C
25
C
0.01
0.1 0.2 0.5 1 2
5
10
20
50
100
200
500
1000
2000
5000
10000
0.001
10
Fig.5 DC current gain
vs. collector current (
)
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Ta
=
25
C
I
C
/I
B
=1000
500
0.01
0.1 0.2
0.2
0.5
0.5
1
1
2
2
5
5
10
10
20
50
100
Fig.6 Collector-emitter saturation
voltage vs. collector current
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
2SD2212 / 2SD2143 / 2SD1866
Transistors
Rev.A
3/3
0.01
0.1 0.2
0.2
0.5
0.5
1
2
5 10
10
20
50
100
Fig.7 Collector-emitter saturation
voltage vs. collector current
COLLECTOR CURRENT : I
C
(A)
I
C
/I
B
=1000
COLLECTOR SATURATION
VOLTAGE : V
CE(sat)
(V)
1
2
5
Ta
= -
25
C
25
C
100
C
0.05 0.1 0.2
5
0.5
10
1
2
5
10 20
50
20
50
100
200
Fig.8 Collector output capacitance
vs. collector-base voltage
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
COLLECTOR OUTPUT
CAPACITANCE : C
ob
(pF)
Ta
=
25
C
I
E
=
0A
f
=
1MHz
0.1 0.2 0.5 1 2
5 10 20
50 100 200 500 1000
1m
2m
5m
10m
20m
50m
100m
200m
500m
1
2
5
10
Fig.9 Safe operating area (A. S. O)
2SD2212 (MPT)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : Ic (A)
Ic max (pulse)
Pw=1mS
Pw=10mS
Pw=100mS
DC
Ta=25
C
Single
Nonrepetitive
Pulse
Ta=25
C
Single
Nonrepetitive
Pulse
0.1 0.2 0.5 1 2
5 10 20
50 100 200 500 1000
1m
2m
5m
10m
20m
50m
100m
200m
500m
1
2
5
10
Fig.10 Safe operating area (A. S. O)
2SD2143 (CPT)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : Ic (A)
Ic max (pulse)
Pw=1mS
Pw=10mS
Pw=100mS
DC
0.1 0.2 0.5 1 2
5 10 20
50 100 200 500 1000
1m
2m
5m
10m
20m
50m
100m
200m
500m
1
2
5
10
Fig.11 Safe operating area (A. S. O)
2SD1866 (ATV)
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
COLLECTOR CURRENT : Ic (A)
Ic max (pulse)
Pw=1mS
Pw=10mS
Pw=100mS
DC
Ta=25
C
Single
Nonrepetitive
Pulse
When mounted on 1.7mm
thick PCB having collector
plating area 1cm
2
or larger.
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
PDF 
ZIP