2SD2170
Transistors
Rev.A
1/2
Medium Power Transistor
(Motor, Relay drive) (90 , 2A)
+
20
-
10
2SD2170
Features
1) Built-in zener diode between collector and base.
2) Zener diode has low dispersion.
3) Strong protection against reverse power surges due to
"L" loads.
4) Darlington connection for high DC current gain.
5) Built-in resistor between base and emitter.
6) Built-in damper diode.
External dimensions (Unit : mm)
(3) Emitter
(2) Collector
(1) Base
EIAJ : SC-62
1.5
0.4
1.5
0.4
1.6
0.5
3.0
0.4
1.5
(3)
4.5
(1)
(2)
0.5
4.0
2.5
1.0
ROHM : MPT3
Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
Tj
Tstg
Limits
90
90
+
20
+
20
-
10
-
10
6
2
3
2
0.5
1
2
150
-
55 to
+
150
Unit
V
V
V
A (DC)
A (Pulse)
W
C
C
1 Single pulse Pw=10ms,Duty=1/2
2 When mounted on a 40 x 40 x 0.7 mm ceramic board.
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Packaging specifications and h
FE
Equivalent circuit
Type
2SD2170
MPT3
1k to 10k
T100
1000
DM
Package
h
FE
Code
Basic ordering unit (pieces)
Marking
R
2
R
1
E
B
C
C
B
E
: Emitter
: Base
: Collector
R
1
3.5k
R
2
300
Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Collector cutoff current
Emitter cutoff current
DC current transfer ratio
Transition frequency
Output capacitance
1 Measure using pulse current.
2 Transition frequency of the device.
BV
CBO
BV
CEO
I
CBO
I
EBO
h
FE
f
T
Cob
80
80
-
-
1000
-
-
-
-
-
-
-
80
25
110
110
10
3
10000
-
-
V
V
A
mA
-
1
2
1
MHz
pF
I
C
=
50
A
I
C
=
1mA
V
CB
=
70V
V
EB
=
5V
Collector-emitter saturation voltage
V
CE(sat)
-
-
1.5
V
I
C
/I
B
=
1A/1mA
V
CE
=
2V , I
C
=
1A
V
CE
=
5V , I
E
=-
0.1A , f
=
30MHz
V
CB
=
10V , I
E
=
0A , f
=
1MHz
2SD2170
Transistors
Rev.A
2/2
Electrical characteristic curves
2.0
COLLECTOR CURRENT : I
C
(
A)
5
2
3
4
1
0
1.2
1.6
0.4
0.8
0
COLLECTOR TO EMITTER VOLTAGE : V
CE
(V)
Fig.1 Grounded emitter output
characteristics
Ta=25
C
1.0mA
0.9mA
0.6mA
0.4mA
I
B
=0.3mA
0.8mA
0.7mA
0.5mA
COLLECTOR CURRENT : I
C
(
A)
3
1.5
1
2
2.5
0.5
0
0.001
0.002
0.005
0.01
0.02
0.05
0.1
1
2
5
0.2
0.5
BASE TO EMITTER VOLTAGE : V
BE
(V)
Fig.2 Grounded emitter propagation
characteristics
Ta=25
C
V
CE
=2V
DC CURRENT GAIN : h
FE
5
1
2
0.02 0.05 0.1
0.2 0.5
0.01
0.005
50
100
200
500
1000
2000
5000
10000
20
COLLECTOR CURRENT : I
C
(A)
Fig.3 DC current gain vs. collector current
Ta=25
C
V
CE
=4V
2V
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
5
1
2
0.05
0.1
0.2
0.5
0.02
0.01
0.2
0.5
1
2
5
0.1
COLLECTOR CURRENT : I
C
(A)
Fig.4 Collector-emitter saturation voltage
vs. collector current
Ta=25
C
I
C
/I
B
=1000
500
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
50
10
20
0.5
1
2
5
0.1
10
20
50
100
200
5
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
Fig.5 Collector output capacitance
vs. collector-base voltage
Ta=25
C
f=1MHz
I
E
=0A
IC (A)
1000
10
100
1
0.1
0.01
0.1
1
10
0.001
V
CE
(V)
Fig.6 Safe operating area
Ta=25
C
Single
Nonrepetitive
Pulse
1ms
DC
10ms
Pw=10ms
Appendix
Appendix1-Rev1.1
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level of
reliability and the malfunction of with would directly endanger human life (such as medical instruments,
transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other
safety devices), please be sure to consult with our sales representative in advance.
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any
means without prior permission of ROHM CO.,LTD.
The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or
otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
About Export Control Order in Japan
Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control
Order in Japan.
In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause)
on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
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