2SD2672
Transistors
1/2
Low frequency amplifier
2SD2672
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Application
Low frequency amplifier
Driver
!
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Features
1) A collector current is large. (4A)
2) V
CE(sat)
250mV
At I
C
= 2A / I
B
= 40mA
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External dimensions (Units : mm)
ROHM : TSMT3
(1) Emitter
(2) Base
(3) Collector
Abbreviated symbol : YX
Each lead has same dimensions
( 2
)
( 1
)
( 3
)
0 0.1
0.16
0.85
1.0MAX
0.7
2.9
2.8
1.9
1.6
0.95
0.95
0.4
0.3 0.6
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Absolute maximum ratings (Ta=25
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
P
C
Tj
Tstg
Limits
15
12
6
4
500
150
-
55~
+
150
8
Unit
V
V
V
A
A
mW
C
C
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Power dissipation
Junction temperature
Range of storage temperature
Single pulse, P
W
=
1ms
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Packaging specifications
2SD2672
T146
3000
Type
Package
Code
Basic ordering unit (pieces)
Taping
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Electrical characteristics (Ta=25
C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Conditions
V
CB
=
10V, I
E
=
0A, f
=
1MHz
f
T
-
250
-
MHz
V
CE
=
2V, I
E
=-
200mA, f
=
100MHz
BV
CBO
15
-
-
V
I
C
=
10
A
BV
CEO
12
-
-
V
I
C
=
1mA
BV
EBO
6
-
-
V
I
E
=
10
A
I
CBO
-
-
100
nA
V
CB
=
15V
I
EBO
-
-
100
nA
V
EB
=
6V
V
CE(sat)
-
70
250
mV
I
C
=
2A, I
B
=
40mA
h
FE
270
-
680
-
V
CE
=
2V, I
C
=
200mA
Cob
-
60
-
pF
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
Transition frequency
Corrector output capacitance
Pulsed
2SD2672
Transistors
2/2
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!
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Electrical characteristic curves
COLLECTOR CURRENT : I
C
(A)
DC CURRENT GAIN : h
FE
Fig.1 DC current gain
vs. collector current
0.001
0.01
0.1
1
10
10
1000
100
Ta
=
125
C
Ta
=-
40
C
Ta
=
25
C
V
CE
=
2V
Pulsed
COLLECTOR CURRENT : I
C
(A)
BASE SATURATION VOLTAGE : V
BE (sat)
(V)
COLLECTOR SATURATION VOLTAGE : V
CE (sat)
(V)
Fig.2 Collector-emitter saturation voltage
base-emitter saturation voltage
vs. collector current
0.01
0.001
1
0.1
0.001
0.01
0.1
10
1
Ta
=
25
C
Ta
=-
40
C
Ta
=
125
C
I
C
/I
B
=
20
Pulsed
I
C
/I
B
=
20/1
Pulsed
COLLECTOR CURRENT : I
C
(A)
COLLECTOR SATURATION VOLTAGE : V
CE(sat)
(V)
Fig.3 Collector-emitter saturation voltage
vs. collector current
0.001
0.01
0.1
1
10
0.01
0.1
1
I
C
/I
B
=
20/1
Pulsed
Ta
=
25
C
Ta
=-
40
C
Ta
=
125
C
BASE TO EMITTER CURRENT : V
BE
(V)
COLLECTOR CURRENT : I
C
(A)
Fig.4 Grounded emitter propagation
characteristics
0
1
2
0.001
0.01
1
10
0.1
V
BE
=
2V
Pulsed
Ta
=
125
C
Ta
=
25
C
Ta
=-
40
C
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE : Cib (pF)
Fig.5 Collector output capacitance
vs. collector-base voltage
Emitter input capacitance
vs. emitter-base voltage
EMITTER TO BASE VOLTAGE : V
EB
(V)
COLLECTOR TO BASE VOLTAGE : V
CB
(V)
1
10
100
0.001
0.1
0.01
1
10
100
1000
f
=
1MHz
I
C
=
0A
Ta
=
25
Cib
Cob
EMITTER CURRENT : I
E
(A)
TRANSITION FREQUENCY : f
T
(MHz)
Fig.6 Gain bandwidth product
vs. emitter current
0.01
0.1
1
10
10
1000
100
Ta
=
25
C
V
CE
=-
2V
f
=
100MHz
COLLECTOR CURRENT : I
C
(A)
Fig.7 Switching time
0.01
1
0.1
10
1
10
10000
1000
100
Ta
=
25
C
V
CE
=-
5V
f
=
100MHz
tstg
tdon
tr
tf
SWITCHING TIME : (ns)
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